US4637127A
Expired / Lapsed
US
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Method for manufacturing a semiconductor device
Assignee: NEC Corp
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Filing: 1982-07-06
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Granted: 1987-01-20
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Expires: 2002-07-06
Abstract
Abstract A method of epitaxying layers on a semiconductor substrate through apertures in an insulating layer formed on a substrate. The layers are grown from the substrate and extend on the insulating layer by reacting dichlorosilane, hydrogen chloride and a carrier gas flow in a chamber under reduced pressure. The layers are used for semiconductors device formation.
Inventors
- 👤 Yukinori Kurogi
- 👤 Nobuhiro Endo
- 👤 Kohetsu Tanno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 06:27
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/113; H10D62/115; H10D62/116; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2926; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/018; H10W10/10; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/027
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
127 words
A method of manufacturing a semiconductor device comprising the steps of preparing a single crystal silicon substrate having a major surface with an insulating film formed thereon, at least one aperture selectively formed in said film, said insulating film including a silicon dioxide film and a silicon nitride film deposited on the side surface of said aperture formed in said silicon dioxide film, setting said single crystal silicon substrate within a chamber, and growing a silicon monocrystalline layer extending from the portion of said single crystal silicon substrate which is within said aperture, said grown layer extending onto said insulating film, said layer being grown by making dichlorosilane, hydrogen chloride, and a carrier gas flow into said chamber and by reacting them under a reduced gas pressure.
Claim 2
Independent Claim
127 words
A method of manufacturing a semiconductor device comprising the steps of preparing a single crystal silicon substrate having a major surface with an insulating film formed thereon, at least one aperture selectively formed in said film, said insulating film including a silicon dioxide film and a silicon nitride film deposited on the side surface of said aperture formed in said silicon dioxide film, setting said single crystal silicon substrate within a chamber, and growing a silicon monocrystalline layer extending from the portion of said single crystal silicon substrate which is within said aperture, said grown layer extending onto said insulating film, said layer being grown by making dichlorosilane, hydrogen chloride, and a carrier gas flow into said chamber and by reacting them under a reduced gas pressure.
Claim 3
Dependent Claim
30 words
The method of manufacturing a semiconductor device as claimed in claim 1, in which said silicon monocrystalline layer is grown while maintaining a substrate temperature at 850° to 1100° C.
Claim 4
Dependent Claim
29 words
The method of manufacturing a semiconductor device as claimed in claim 1, in which said silicon monocrystalline layer is grown at a reduced pressure of 1 to 200 Torr.
Claim 5
Dependent Claim
36 words
The method of manufacturing a semiconductor device as claimed in claim 1, in which the gas flowing into said chamber includes 0.05 to 1.0 mol.% dichlorosilane, 0.05 to 3.0 mol.% hydrogen chloride and a carrier gas.
Claim 6
Dependent Claim
57 words
The method of manufacturing a semiconductor device as claimed in claim 1, in which said silicon monocrystalline layer is grown to a height of 0.5 to 4 μm from the surface of said insulating film, the distance from the edge of said aperture to the outer edge of the silicon monocrystalline layer being 0.5 to 4 μm.
Claim 7
Dependent Claim
47 words
The method of manufacturing a semiconductor device as claimed in claim 1, in which a plurality of apertures are formed in said insulating film, and said silicon monocrystalline layer is grown so that it forms a continuous layer on the insulating film portion between the adjacent apertures.
Claim 8
Dependent Claim
77 words
The method of manufacturing a semiconductor device as claimed in claim 1, in which said aperture formed in the insulated film includes a lower portion adjacent said silicon single crystal substrate and an upper portion having an area which is larger than the area of said lower portion, and said silicon monocrystalline layer is grown so that the surface of said silicon monocrystalline layer and the surface of the insulating film becomes substantially co-planar with each other.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-01-19 | 1990-07-21 | 1991-01-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-01-19 | 1994-07-21 | 1995-01-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-01-19 | 1998-07-21 | 1999-01-20 | $7700.00 | Window Closed / Lapsed |