Process for the growth of structures based on group IV semiconductor materials

Claim 1

A process for forming a single crystal region of a semiconductor material on a region of insulating material of a composite structure, said structure having a surface including a section of said insulating material and a section of single crystal material comprising the steps of forming said single crystal region of a semiconductor material so that it contacts said section of single crystal material of said composite structure wherein said semiconductor material comprises a Group IV element and said single crystal region of semiconductor material is produced by the procedure comprising the steps of forming a precursor region that interfaces with said single crystal material of said composite structure, initiating growth of said single crystal region of semiconductor material at the interface of said precursor region with said single crystal material of said composite structure, and propagating said growth into said precursor region continuously from said interface by producing a chemical potential gradient in said precursor region to complete said single crystal region in the absence of polycrystalline propagation initiated from a polycrystalline region wherein said polycrystalline propagation under the conditions of said chemical potential gradient limits said propagation from said interface, whereby said single crystal region overlies at least a portion of said insulating material and whereby said single crystal region is suitable for use in producing electronic devices.