Method for preparing large single crystal thin films

Claim 1

A method of growing a single crystal thin film on a substantially inert substrate comprising the steps of: depositing an amorphous film onto said inert substrate at a temperature below the crystallization temperature of said amorphous film to form a peripheral part of said amorphous film in a point; locally heating said peripheral part of said amorphous film to its crystallization temperature to form a single crystal; and passing continuously from said single crystal across said amorphous film a hot zone at a temperature below the melt temperature of said amorphous film but sufficiently high to propagate a crystalline phase through said amorphous film, whereby a single crystal thin film is produced.

Claim 2

A method of growing a single crystal thin film on a substantially inert substrate comprising the steps of: depositing an amorphous film onto said inert substrate at a temperature below the crystallization temperature of said amorphous film to form a peripheral part of said amorphous film in a point; locally heating said peripheral part of said amorphous film to its crystallization temperature to form a single crystal; and passing continuously from said single crystal across said amorphous film a hot zone at a temperature below the melt temperature of said amorphous film but sufficiently high to propagate a crystalline phase through said amorphous film, whereby a single crystal thin film is produced.

Claim 3

A method of growing multilayer single crystal thin films of respectively different compositions on a substrate surface comprising a substantially inert portion and a contiguous single crystal portion including the steps of: depositing a first amorphous film of a first composition onto said substrate at a temperature below the crystallization temperature of said first amorphous film; passing continuously across said first amorphous film from said single crystal contiguous with said first amorphous film a hot zone at a temperature well below the melt temperature of said first amorphous film but sufficiently high to nucleate and to propagate a monocrystalline phase in said first amorphous film, whereby a first single crystal thin film is produced; depositing a second amorphous film of a second composition on said first single crystal thin film at a temperature below the epitaxial crystallization temperature of said second amorphous film; and passing continuously across said second amorphous film hot zone at a temperature well below the melt temperature of said second amorphous film but sufficiently high to nucleate and to propagate a monocrystalline phase in said second amorphous film, whereby a second single crystal thin film is produced.

Claim 4

A method of growing multilayer single crystal thin films of respectively different compositions on a substrate surface comprising a substantially inert portion and a contiguous single crystal portion including the steps of: depositing a first amorphous film of a first composition onto said substrate at a temperature below the crystallization temperature of said first amorphous film; passing continuously across said first amorphous film from said single crystal contiguous with said first amorphous film a hot zone at a temperature well below the melt temperature of said first amorphous film but sufficiently high to nucleate and to propagate a monocrystalline phase in said first amorphous film, whereby a first single crystal thin film is produced; depositing a second amorphous film of a second composition on said first single crystal thin film at a temperature below the epitaxial crystallization temperature of said second amorphous film; and passing continuously across said second amorphous film hot zone at a temperature well below the melt temperature of said second amorphous film but sufficiently high to nucleate and to propagate a monocrystalline phase in said second amorphous film, whereby a second single crystal thin film is produced.