US3389022A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing silicon carbide layers on silicon substrates
Assignee: RTX Corp
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Filing: 1965-09-17
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Granted: 1968-06-18
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Expires: 1985-09-17
Abstract
No abstract record available.
Inventors
- 👤 Bernard L Kravitz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 11:59
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H01; H01B; H01B1/00; H01B1/04; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/615; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/148; Y10S148/169; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
53 words
A METHOD OF FORMING A SEMICONDUCTING DEVICE INCLUDING THE STEPS OF DEPOSITING CARBON ON THE SURFACE OF A SEMICONDUCTING SILICON CRYSTAL, MAINTAINING THE CRYSTAL IN AN ENVIRONMENT FREE OF CONTAMINANTS AND THEN HEATING SAID CARBON AND SAID CRYSTAL TO AN ELEVATED TEMPERATURE AT WHICH THE SILICON AND CARBON REACT TO FORM SILICON CARBIDE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-06-18 | 1971-12-18 | 1972-06-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-06-18 | 1975-12-18 | 1976-06-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-06-18 | 1979-12-18 | 1980-06-18 | $7700.00 | Window Closed / Lapsed |