US3147159A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Hexagonal silicon carbide crystals produced from an elemental silicon vapor deposited onto a carbon plate
Assignee: Saint Gobain Abrasives Inc
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Filing: 1960-10-19
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Granted: 1964-09-01
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Expires: 1980-10-19
Abstract
No abstract record available.
Inventors
- 👤 Edwin C Lowe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 00:23
CPC Classifications
C; C30; C30B; C30B25/00; C01; C01B; C01B32/00; C01B32/90; C01B32/914; C01B32/956; C01B32/963; C01B32/984; C30B29/00; C30B29/10; C30B29/36; Y; Y10; Y10S; Y10S117/00; Y10S117/906; Y10S118/00; Y10S118/90; Y10S148/00; Y10S148/148; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
131 words
PROCESS FOR THE PRODUCTION OF CRYSTALS OF HEXAGONAL SILICON CARBIDE ADATPED FOR USE IN ELECTRONIC EQUIPMENT, WITH PARALLEL FACES, COMPRISING PROVIDING AN ATMOSPHERE CONTAINING NOT MORE THAN ABOUT 1 MOL PERCENT OF NITROGEN, SUBSTANTIALLY NO UNCOMBINED OXYGEN AND THE REMAINDER A PROTECTIVE GAS SELECTED FROM THE GROUP CONSISTING OF HYDROGEN, CARBON MONOXIDE AND THE INERT GASES AND MIXTURES THEREOF, LOCATING IN THIS ATMOSPHERE AT LEAST ONE MASS OF ELEMENTAL SILICON AND AT LEAST ONE PIECE OF CARBON, HEATING THE ENTIRE ASSEMBLY TO A TEMPERATURE BETWEEN ABOUT 2300*C. AND ABOUT 2500*C., AND PROVIDING A SIGNIFICANT DOWNWARD TEMPERATURE GRADIENT EXTENDING IN A GENERALLY NORMAL DIRECTION AWAY FROM THE SURFACE OF SAID PIECE OF PIECES OF CARBON FOR A DISTANCE OF LEAST EQUAL TO THE MAXIMUM DIMENSION OF THE LARGEST CRYSTAL TO BE FORMED.
Claim 2
Dependent Claim
131 words
PROCESS FOR THE PRODUCTION OF CRYSTALS OF HEXAGONAL SILICON CARBIDE ADATPED FOR USE IN ELECTRONIC EQUIPMENT, WITH PARALLEL FACES, COMPRISING PROVIDING AN ATMOSPHERE CONTAINING NOT MORE THAN ABOUT 1 MOL PERCENT OF NITROGEN, SUBSTANTIALLY NO UNCOMBINED OXYGEN AND THE REMAINDER A PROTECTIVE GAS SELECTED FROM THE GROUP CONSISTING OF HYDROGEN, CARBON MONOXIDE AND THE INERT GASES AND MIXTURES THEREOF, LOCATING IN THIS ATMOSPHERE AT LEAST ONE MASS OF ELEMENTAL SILICON AND AT LEAST ONE PIECE OF CARBON, HEATING THE ENTIRE ASSEMBLY TO A TEMPERATURE BETWEEN ABOUT 2300*C. AND ABOUT 2500*C., AND PROVIDING A SIGNIFICANT DOWNWARD TEMPERATURE GRADIENT EXTENDING IN A GENERALLY NORMAL DIRECTION AWAY FROM THE SURFACE OF SAID PIECE OF PIECES OF CARBON FOR A DISTANCE OF LEAST EQUAL TO THE MAXIMUM DIMENSION OF THE LARGEST CRYSTAL TO BE FORMED.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1967-09-01 | 1968-03-02 | 1968-09-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1971-09-01 | 1972-03-02 | 1972-09-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1975-09-01 | 1976-03-02 | 1976-09-01 | $7700.00 | Window Closed / Lapsed |