US5349204A
Expired / Lapsed
US
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Photoelectric conversion device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1993-12-07
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Granted: 1994-09-20
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Expires: 2013-12-07
Abstract
Abstract A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semiconductor laminate member has such a structure that a first non-single-crystal semiconductor layer having a P or N first conductivity type, an I-type second non-single-crystal semiconductor layer and a third non-single-crystal semiconductor layer having a second conductivity type opposite the first conductivity type are laminated in this order. The first (or third) non-single-crystal semiconductor layer is disposed on the side on which light is incident, and is P-type. The I-type non-single-crystal semiconductor layer has introduced thereinto a P-type impurity, such as boron which is distributed so that its concentration decreases towards the third (or first) non-single-crystal semiconductor layer in the thickwise direction of the I-type layer.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 17:21
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/122; H10F10/00; H10F10/10; H10F10/17; H10F10/174; H10F77/1223; H10F77/16; H10F77/169; H10F77/1692; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02E10/548; Y10; Y10S; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
89 words
A semiconductor device comprising:: a substrate having a conductive surface; a non-single-crystal semiconductor laminate member formed on said conductive surface of said substrate, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least one junction selected from the group consisting of PI, NI, PIN and NIP junctions; and a second conductive layer formed on said non-single-crystal semiconductor laminated member; wherein said I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains oxygen in a low concentration of only 5×10 19 atoms/cm 3 or less.
Claim 2
Dependent Claim
89 words
A semiconductor device comprising:: a substrate having a conductive surface; a non-single-crystal semiconductor laminate member formed on said conductive surface of said substrate, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least one junction selected from the group consisting of PI, NI, PIN and NIP junctions; and a second conductive layer formed on said non-single-crystal semiconductor laminated member; wherein said I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains oxygen in a low concentration of only 5×10 19 atoms/cm 3 or less.
Claim 3
Dependent Claim
90 words
A semiconductor device comprising: a substrate having a conductive surface;; a non-single-crystal semiconductor laminate member formed on said conductive surface of said substrate, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least one junction selected from the group consisting of PI, NI, PIN and NIP junctions; and a second conductive layer formed on the said non-single-crystal semiconductor laminate member; wherein said I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains carbon in a low concentration of only 4×10 18 atoms/cm 3 or less.
Claim 4
Dependent Claim
90 words
A semiconductor device comprising: a substrate having a conductive surface;; a non-single-crystal semiconductor laminate member formed on said conductive surface of said substrate, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least one junction selected from the group consisting of PI, NI, PIN and NIP junctions; and a second conductive layer formed on the said non-single-crystal semiconductor laminate member; wherein said I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains carbon in a low concentration of only 4×10 18 atoms/cm 3 or less.
Claim 5
Dependent Claim
89 words
A semiconductor device comprising: a substrate having a conductive surface; a non-single-crystal semiconductor laminate member formed on said conductive surface of said substrate, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least one junction selected from the group consisting of PI, NI, PIN and NIP junctions; and a second conductive layer formed on said non-singe-crystal semiconductor laminate member; wherein said I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains phosphorus in a low concentration of only 5×10 15 atoms/cm 3 or less.
Claim 6
Dependent Claim
89 words
A semiconductor device comprising: a substrate having a conductive surface; a non-single-crystal semiconductor laminate member formed on said conductive surface of said substrate, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least one junction selected from the group consisting of PI, NI, PIN and NIP junctions; and a second conductive layer formed on said non-singe-crystal semiconductor laminate member; wherein said I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains phosphorus in a low concentration of only 5×10 15 atoms/cm 3 or less.
Claim 7
Dependent Claim
37 words
A semiconductor device according to claims 1, 2, or 3 wherein said I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member is selected from the group consisting of silicon, germanimum and Si x Ge 1-x (0<x<1).
Claim 8
Dependent Claim
34 words
A semiconductor device according to claim 4, wherein said I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains a recombination center neutralizer selected from the group consisting of hydrogen and a halogen.
Claim 9
Dependent Claim
17 words
A semiconductor device according to claims 1, 2, or 3 wherein said substrate is a conductive substrate.
Claim 10
Dependent Claim
34 words
A semiconductor device formed on a substrate, comprising at least an intrinsic type non-single crystalline semiconductor layer, wherein a concentration of oxygen in said semiconductor layer is only 5×10 19 atoms/cm 3 or less.
Claim 11
Dependent Claim
34 words
A semiconductor device formed on a substrate, comprising at least an intrinsic type non-single crystalline semiconductor layer, wherein a concentration of oxygen in said semiconductor layer is only 5×10 19 atoms/cm 3 or less.
Claim 12
Dependent Claim
34 words
A semiconductor device formed on a substrate, comprising at least an intrinsic type non-single crystalline semiconductor layer, wherein a concentration of carbon in said semiconductor layer is only 4×10 18 atoms/cm 3 or less.
Claim 13
Dependent Claim
34 words
A semiconductor device formed on a substrate, comprising at least an intrinsic type non-single crystalline semiconductor layer, wherein a concentration of carbon in said semiconductor layer is only 4×10 18 atoms/cm 3 or less.
Claim 14
Dependent Claim
34 words
A semiconductor device formed on a substrate, comprising at least an intrinsic type non-single crystalline semiconductor layer, wherein a concentration of phosphorus in said semiconductor layer is only 5×10 18 atoms/cm 3 or less.
Claim 15
Dependent Claim
34 words
A semiconductor device formed on a substrate, comprising at least an intrinsic type non-single crystalline semiconductor layer, wherein a concentration of phosphorus in said semiconductor layer is only 5×10 18 atoms/cm 3 or less.
Claim 16
Dependent Claim
24 words
The semiconductor device of claims 7, 8, or 9 wherein said intrinsic type semiconductor layer comprises silicon, germanium or Si x Ge 1-x (0<x<1).
Claim 17
Dependent Claim
25 words
The semiconductor device of claims 7, 8, or 9 wherein said intrinsic type semiconductor layer contains hydrogen or a halogen as a recombination center neutralizer.
Claim 18
Dependent Claim
61 words
A semiconductor device comprising: a first electrode; a photovoltaic conversion layer formed on said first electrode and comprising at least a non-single crystalline semiconductor layer having a substantially intrinsic conductivity type; and a second electrode formed on said photovoltaic semiconductor layer, wherein said non-single crystalline semiconductor layer contains oxygen in the low concentration of only 5×10 19 atoms/cm 3 or less.
Claim 19
Dependent Claim
61 words
A semiconductor device comprising: a first electrode; a photovoltaic conversion layer formed on said first electrode and comprising at least a non-single crystalline semiconductor layer having a substantially intrinsic conductivity type; and a second electrode formed on said photovoltaic semiconductor layer, wherein said non-single crystalline semiconductor layer contains oxygen in the low concentration of only 5×10 19 atoms/cm 3 or less.
Claim 20
Dependent Claim
61 words
A semiconductor device comprising: a first electrode; a photovoltaic conversion layer formed on said first electrode and comprising at least a non-single crystalline semiconductor layer having a substantially intrinsic conductivity type; and a second electrode formed on said photovoltaic semiconductor layer, wherein said non-single crystalline semiconductor layer contains carbon in the low concentration of only 4×10 18 atoms/cm 3 or less.
Claim 21
Dependent Claim
61 words
A semiconductor device comprising: a first electrode; a photovoltaic conversion layer formed on said first electrode and comprising at least a non-single crystalline semiconductor layer having a substantially intrinsic conductivity type; and a second electrode formed on said photovoltaic semiconductor layer, wherein said non-single crystalline semiconductor layer contains carbon in the low concentration of only 4×10 18 atoms/cm 3 or less.
Claim 22
Dependent Claim
61 words
A semiconductor device comprising: a first electrode; a photovoltaic conversion layer formed on said first electrode and comprising at least a non-single crystalline semiconductor layer having a substantially intrinsic conductivity type; and a second electrode formed on said photovoltaic semiconductor layer, wherein said non-single crystalline semiconductor layer contains phosphorous in the low concentration of only 5×10 15 atoms/cm 3 or less.
Claim 23
Dependent Claim
61 words
A semiconductor device comprising: a first electrode; a photovoltaic conversion layer formed on said first electrode and comprising at least a non-single crystalline semiconductor layer having a substantially intrinsic conductivity type; and a second electrode formed on said photovoltaic semiconductor layer, wherein said non-single crystalline semiconductor layer contains phosphorous in the low concentration of only 5×10 15 atoms/cm 3 or less.
Claim 24
Dependent Claim
45 words
A semiconductor device comprising: a photovoltaic conversion layer comprising a non-single crystalline semiconductor layer; and a pair of electrodes contacting said photovoltaic conversion semiconductor layer, wherein said non-single crystalline semiconductor layer contains oxygen in the low concentration of only 5×10 19 atoms/cm 3 or less.
Claim 25
Dependent Claim
45 words
A semiconductor device comprising: a photovoltaic conversion layer comprising a non-single crystalline semiconductor layer; and a pair of electrodes contacting said photovoltaic conversion semiconductor layer, wherein said non-single crystalline semiconductor layer contains oxygen in the low concentration of only 5×10 19 atoms/cm 3 or less.
Claim 26
Dependent Claim
45 words
A semiconductor device comprising: a photovoltaic conversion layer comprising a non-single crystalline semiconductor layer; and a pair of electrodes contacting said photovoltaic conversion semiconductor layer, wherein said non-single crystalline semiconductor layer contains carbon in the low concentration of only 4×10 18 atoms/cm 3 or less.
Claim 27
Dependent Claim
45 words
A semiconductor device comprising: a photovoltaic conversion layer comprising a non-single crystalline semiconductor layer; and a pair of electrodes contacting said photovoltaic conversion semiconductor layer, wherein said non-single crystalline semiconductor layer contains carbon in the low concentration of only 4×10 18 atoms/cm 3 or less.
Claim 28
Dependent Claim
45 words
A semiconductor device comprising: a photovoltaic conversion layer comprising a non-single crystalline semiconductor layer; and a pair of electrodes contacting said photovoltaic conversion semiconductor layer, wherein said non-single crystalline semiconductor layer contains phosophorous in the low concentration of only 5×10 15 atoms/cm 3 or less.
Claim 29
Dependent Claim
45 words
A semiconductor device comprising: a photovoltaic conversion layer comprising a non-single crystalline semiconductor layer; and a pair of electrodes contacting said photovoltaic conversion semiconductor layer, wherein said non-single crystalline semiconductor layer contains phosophorous in the low concentration of only 5×10 15 atoms/cm 3 or less.
Claim 30
Dependent Claim
46 words
A semiconductor device comprising: a non-single crystalline semiconductor layer having substantially an intrinsic conductivity type; and a pair of electrodes contacting said non-single crystalline semiconductor layer, wherein said non-single crystalline semiconductor layer contains oxygen in the low concentration of only 5×10 19 atoms/cm 3 or less.
Claim 31
Dependent Claim
46 words
A semiconductor device comprising: a non-single crystalline semiconductor layer having substantially an intrinsic conductivity type; and a pair of electrodes contacting said non-single crystalline semiconductor layer, wherein said non-single crystalline semiconductor layer contains oxygen in the low concentration of only 5×10 19 atoms/cm 3 or less.
Claim 32
Dependent Claim
46 words
A semiconductor device comprising: a non-single crystalline semiconductor layer having substantially an intrinsic conductivity type; and a pair of electrodes contacting said non-single crystalline semiconductor layer, wherein said non-single crystalline semiconductor layer contains carbon in the low concentration of only 4×10 18 atoms/cm 3 or less.
Claim 33
Dependent Claim
46 words
A semiconductor device comprising: a non-single crystalline semiconductor layer having substantially an intrinsic conductivity type; and a pair of electrodes contacting said non-single crystalline semiconductor layer, wherein said non-single crystalline semiconductor layer contains carbon in the low concentration of only 4×10 18 atoms/cm 3 or less.
Claim 34
Dependent Claim
46 words
A semiconductor device comprising:: a non-single crystalline semiconductor layer having substantially an intrinsic conductivity type; and a pair of electrode contacting said non-single crystalline semiconductor layer, wherein said non-single crystalline semiconductor layer contains phosphorous in the low concentration of only 5×10 15 atoms/cm 3 or less.
Claim 35
Dependent Claim
46 words
A semiconductor device comprising:: a non-single crystalline semiconductor layer having substantially an intrinsic conductivity type; and a pair of electrode contacting said non-single crystalline semiconductor layer, wherein said non-single crystalline semiconductor layer contains phosphorous in the low concentration of only 5×10 15 atoms/cm 3 or less.
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