US4843451A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photovoltaic device with O and N doping
Assignee: Sanyo Electric Co Ltd
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Filing: 1988-07-29
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Granted: 1989-06-27
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Expires: 2008-07-29
Abstract
Abstract A photovoltaic device has at least one set of amorphous semiconductor layers forming a p-i-n junction structure, wherein at least one of the semiconductor layers having a given thickness, is doped with nitrogen and oxygen to a depth forming at least part of said given thickness. Such a photovoltaic device is fabricated by depositing on a substrate at least one set of amorphous semiconductor layers which form a p-i-n junction structure, and by doping at least one of the layers with nitrogen and oxygen to a depth forming at least part of the thickness of the doped layer.
Inventors
- 👤 Kaneo Watanabe
- 👤 Tsugufumi Matsuoka
- 👤 Yukio Nakashima
- 👤 Hisao Haku
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 18:19
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10F10/00; H10F10/10; H10F10/17; H10F71/1035; H10F77/00; H10F77/10; H10F77/12; H10F77/122; H10F77/1223; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
102 words
A photovoltaic device comprising at least one set of amorphous semiconductor layers which form a p-i-n junction structure, said semiconductor layers including a p-layer, an intrinsic i-layer, and an n-layer, at least one layer of said semiconductor layers having a given thickness and being doped simultaneously with nitrogen and oxygen so that both nitrogen and oxygen are present together in said at least one layer to a depth forming at least part of said given thickness, and so that said doped layer contains nitrogen with the range of 0.01 to 3.0 at.% and oxygen within the range of 0.05 to 5.0 at.%.
Claim 2
Dependent Claim
102 words
A photovoltaic device comprising at least one set of amorphous semiconductor layers which form a p-i-n junction structure, said semiconductor layers including a p-layer, an intrinsic i-layer, and an n-layer, at least one layer of said semiconductor layers having a given thickness and being doped simultaneously with nitrogen and oxygen so that both nitrogen and oxygen are present together in said at least one layer to a depth forming at least part of said given thickness, and so that said doped layer contains nitrogen with the range of 0.01 to 3.0 at.% and oxygen within the range of 0.05 to 5.0 at.%.
Claim 3
Dependent Claim
16 words
The photovoltaic device of claim 1, wherein the preferred oxygen range is 0.1 to 1.0 at.%.
Claim 4
Dependent Claim
22 words
The photovoltaic device of claim 1, wherein a doped layer contains nitrogen of about 0.02 at.% and oxygen of about 0.4 at.%.
Claim 5
Dependent Claim
12 words
The photovoltaic device of claim 1, wherein said intrinsic i-layer is doped.
Claim 6
Dependent Claim
19 words
The photovoltaic device of claim 1, wherein said intrinsic i-layer is doped to at least part of its depth.
Claim 7
Dependent Claim
45 words
The photovoltaic device of claim 1, wherein at least one of the doped nitrogen and oxygen is distributed with a concentration which changes in the direction of the depth of the i-layer from one surface of the i-layer to an opposite surface of the i-layer.
Claim 8
Dependent Claim
11 words
The photovoltaic device of claim 1, wherein a p-layer is doped.
Claim 9
Dependent Claim
11 words
The photovoltaic device of claim 1, wherein an n-layer is doped.
References Cited (Backward Citations)
US4064521A
Cited
US4385199A
Cited
US4460670A
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US4626885A
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US4581476A
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US4781765A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-06-26 | 1992-12-26 | 1993-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-26 | 1996-12-26 | 1997-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-26 | 2000-12-26 | 2001-06-27 | $7700.00 | Window Closed / Lapsed |