US4742012A
Expired / Lapsed
US
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Method of making graded junction containing amorphous semiconductor device
Assignee: Tonen General Sekiyu KK
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Filing: 1986-12-30
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Granted: 1988-05-03
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Expires: 2006-12-30
Abstract
Abstract This invention discloses a new semiconductor device having no step type p-i-n juctions but rather has a graded p-i-n juction. The semiconductor device shows a high photoelectric conversion efficiency, and since said device can be produced easily with good reproducibility by a plasma discharge method, it is especially suited for use as a solar battery. An apparatus for the production of said semiconductor device is also disclosed.
Inventors
- 👤 Mitsuo Matsumura
- 👤 Hideo Yamamoto
- 👤 Keitaro Fukui
- 👤 Toshihiro Yoshida
- 👤 Yoshinobu Okayasu
- 👤 Kunio Asai
- 👤 Osamu Nakamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:54
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F10/13; H10F71/00; H10F71/10; H10F71/107; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
158 words
In a method to produce an amorphous P-I-N or N-I-P junction by a plasma decomposition technique, the improvement comprising using an apparatus having a single film forming chamber which is so designed that a dopant gas concentration can be controlled according to a position in the chamber and forming on a base plate a p-type layer or a n-type layer containing a dopant impurity continuously decreasing to zero, then forming an i-type layer containing no dopant impurity on said p-type layer n-type layer and then forming on the i-type layer the other of said n-type layer or p-type layer containing dopant impurity continuously increasing from zero to a predetermined amount continuously to form a graded P-I-N or N-I-P junction amorphous semiconductor device, in which process the layer is changed by controlling the concentration of each respective dopant in a raw gas, the dopant concentration in the raw material gas varying as a function of position in the chamber.
Claim 2
Dependent Claim
158 words
In a method to produce an amorphous P-I-N or N-I-P junction by a plasma decomposition technique, the improvement comprising using an apparatus having a single film forming chamber which is so designed that a dopant gas concentration can be controlled according to a position in the chamber and forming on a base plate a p-type layer or a n-type layer containing a dopant impurity continuously decreasing to zero, then forming an i-type layer containing no dopant impurity on said p-type layer n-type layer and then forming on the i-type layer the other of said n-type layer or p-type layer containing dopant impurity continuously increasing from zero to a predetermined amount continuously to form a graded P-I-N or N-I-P junction amorphous semiconductor device, in which process the layer is changed by controlling the concentration of each respective dopant in a raw gas, the dopant concentration in the raw material gas varying as a function of position in the chamber.
Claim 3
Dependent Claim
40 words
A method as claimed in claim 1, wherein said apparatus has a plurality of feedstock gas supply ports and a plurality of gas discharge ports in the film forming chamber to continuously control the distribution of the dopant gas concentration.
Claim 4
Independent Claim
32 words
A method as claimed in claims 1 or 2, wherein said apparatus has a plurality of baffle plates in the film forming chamber to control the distribution of the dopant gas concentration.
Claim 5
Dependent Claim
20 words
A method as claimed in claim 3, wherein said baffle plates are provided transverse to the direction of gas flow.
Claim 6
Dependent Claim
30 words
A method as claimed in claim 1, wherein the pressure in the chamber is maintained at a constant pressure selected from a pressure range of 0.01 torr to 10 torr.
Claim 7
Dependent Claim
17 words
A method as claimed in claim 5, wherein a hydrogen compound is used as the dopant gas.
References Cited (Backward Citations)
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JPS5925278A
Cited
JPS5952883A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-05-03 | 1991-11-02 | 1992-05-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-05-03 | 1995-11-02 | 1996-05-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-05-03 | 1999-11-02 | 2000-05-03 | $7700.00 | Window Closed / Lapsed |