US4758527A
Expired / Lapsed
US
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Method of making semiconductor photo-electrically-sensitive device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1987-05-05
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Granted: 1988-07-19
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Expires: 2007-05-05
Abstract
Abstract A manufacturing method for semiconductor photo-electrically-sensitive devices. On a conductive substrate or a first conductive layer formed on the substrate a non-single-crystal semiconductor layer member is formed in a reaction chamber, the non-single-crystal semiconductor layer member having at least one I-type non-single-crystal semiconductor layer, whereupon a second conductive layer is formed upon the non-single-crystal semiconductor layer member. The I-type non-single-crystal semiconductor layer is formed in such a manner that it contains sodium and oxygen in very low concentrations.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 09:42
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F77/1662; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
114 words
A manufacturing method of a semiconductor photo-electrically-sensitive device, comprising the steps of; (a) preparing a conductive substrate or a first conductive layer formed on a substrate; (b) forming a non-single-crystal semiconductor layer member on the conductive substrate or the first conductive layer in a reaction chamber, the non-single-crystal semiconductor layer member having at least one I-type non-single-crystal semiconductor layer; and (c) forming a second conductive layer on the non-single-crystal semiconductor layer member; wherein the I-type non-single-crystal semiconductor layer is formed in such a manner that it contains sodium in a low concentration of only 5×10 18 atoms/cm 3 or less and oxygen in a low concentration of only 5×10 18 atoms/cm 3 or less.
Claim 2
Dependent Claim
114 words
A manufacturing method of a semiconductor photo-electrically-sensitive device, comprising the steps of; (a) preparing a conductive substrate or a first conductive layer formed on a substrate; (b) forming a non-single-crystal semiconductor layer member on the conductive substrate or the first conductive layer in a reaction chamber, the non-single-crystal semiconductor layer member having at least one I-type non-single-crystal semiconductor layer; and (c) forming a second conductive layer on the non-single-crystal semiconductor layer member; wherein the I-type non-single-crystal semiconductor layer is formed in such a manner that it contains sodium in a low concentration of only 5×10 18 atoms/cm 3 or less and oxygen in a low concentration of only 5×10 18 atoms/cm 3 or less.
Claim 3
Dependent Claim
108 words
A manufacturing method of a semiconductor photo-electrically-sensitive device, comprising the steps of; (a) preparing an insulating substrate having first and second spaced apart conductive strips formed on its surface; and; (b) forming a non-single-crystal semiconductor layer member on the substrate in a reaction chamber to cover the first and second conductive layers; the non-single-crystal semiconductor layer member having at least one I type non-single-crystal semiconductor layer; wherein the I-type non-single-crystal semiconductor layer is formed in such a manner that it contains sodium in a low concentration of only 5×10 18 atoms/cm 3 or less and oxygen in a low concentration of only 5×10 18 atoms/cm 3 or less.
Claim 4
Dependent Claim
108 words
A manufacturing method of a semiconductor photo-electrically-sensitive device, comprising the steps of; (a) preparing an insulating substrate having first and second spaced apart conductive strips formed on its surface; and; (b) forming a non-single-crystal semiconductor layer member on the substrate in a reaction chamber to cover the first and second conductive layers; the non-single-crystal semiconductor layer member having at least one I type non-single-crystal semiconductor layer; wherein the I-type non-single-crystal semiconductor layer is formed in such a manner that it contains sodium in a low concentration of only 5×10 18 atoms/cm 3 or less and oxygen in a low concentration of only 5×10 18 atoms/cm 3 or less.
Claim 5
Dependent Claim
105 words
A manufacturing method of a semiconductor photo-electrically-sensitive device, comprising the steps of; (a) preparing an insulating substrate; (b) forming a non-single-crystal semiconductor layer member on the substrate in a reaction chamber to cover the substrate; the non-single-crystal semiconductor layer member having at least one I-type non-single-crystal semiconductor layer; and forming first and second spaced apart conductive strips on the non-single-crystal semiconductor layer member; wherein the I-type non-single-crystal semiconductor layer is formed in such a manner that it contains sodium in a low concentration of only 5×10 18 atoms/cm 3 or less and oxygen in a low concentration of only 5×10 18 atoms/cm 3 or less.
Claim 6
Dependent Claim
105 words
A manufacturing method of a semiconductor photo-electrically-sensitive device, comprising the steps of; (a) preparing an insulating substrate; (b) forming a non-single-crystal semiconductor layer member on the substrate in a reaction chamber to cover the substrate; the non-single-crystal semiconductor layer member having at least one I-type non-single-crystal semiconductor layer; and forming first and second spaced apart conductive strips on the non-single-crystal semiconductor layer member; wherein the I-type non-single-crystal semiconductor layer is formed in such a manner that it contains sodium in a low concentration of only 5×10 18 atoms/cm 3 or less and oxygen in a low concentration of only 5×10 18 atoms/cm 3 or less.
Claim 7
Dependent Claim
58 words
A manufacturing method of a semiconductor photo-electrically-sensitive device according to any one of claims 1 to 3, wherein the reaction chamber is pretreated to remove therefrom sodium, and the substrate contains an amount of sodium sufficient, together with said pretreating, to maintain the sodium in the intrinsic non-single-crystal semiconductor layer at said 5×10 18 atoms/cm 3 or less.
Claim 8
Dependent Claim
31 words
A manufacturing method of a semiconductor photo-electrically-sensitive device according to any one of claims 1 to 3, wherein the reaction chamber and the substrate are each pretreated to remove therefrom sodium.
Claim 9
Dependent Claim
41 words
A manufacturing method of a semiconductor photo-electrically-sensitive device according to claim 5, wherein the substrate is placed in the reaction chamber and pretreated to remove therefrom sodium, by introducing a gas containing a chloride into the reaction chamber and heating it.
Claim 10
Dependent Claim
41 words
A manufacturing method of a semiconductor photo-electrically-sensitive device according to any one of claims 1 to 3, wherein the reaction chamber is pretreated to remove therefrom sodium, by introducing a gas containing a chloride into the reaction chamber and heating it.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-19 | 1992-01-18 | 1992-07-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-19 | 1996-01-18 | 1996-07-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-19 | 2000-01-18 | 2000-07-19 | $7700.00 | Window Closed / Lapsed |