Production of amorphous silicon

Abstract

Abstract PURPOSE:To reduce the fluctuation of quality of amorphous silicon film, by effecting a plasma treatment with hydrogen chloride as a pre-treatment in a chamber in advance to the formation of the amorphous silicon. CONSTITUTION:Amorphous silicon is fored by a glow discharge decomposition. In advance to the formation of the amorphous silicon, a plasma treatment with hydrogen chloride is effected as a pre-treatment in the chamber. This plasma treatment is conducted by effecting a discharge treatment for 10-30min by an RF power of 10-100W while supplying hydrogen chloride gas at a rate of 50- 500sec cm, followed by the formation of hydrogen amorphous film. According to this method, it is possible to reduce the fluctuation in the quality control of the amorphous silicon film.

Inventors

• 👤 Tetsuyoshi Takeshita
• 👤 竹下　哲義

Bibliographic Details