Electronic device including thin film transistor

Claim 2

An electronic device comprising a thin film transistor comprising: a substrate; a thin semiconductor film provided on said substrate; a gate electrode comprising at least two sections disposed in parallel and being electrically interconnected to each other; a gate insulative film arranged between said thin semiconductor film and said gate electrode; and source electrode or a drain electrode, said second electrode being arranged on both sides of said gate electrode; and a third electrode comprising the other of said source electrode or said drain electrode, said third electrode being arranged between said two sections of said gate electrode, wherein at least a portion of one of said second electrode and said third electrode are overlapped with a portion of said gate electrode with respect to a plan view.

Claim 3

An electronic device comprising a thin film transistor comprising: a thin semiconductor film formed on a substrate; a gate insulative film formed on one surface of said thin semiconductor film; a plurality of gate electrode portions arranged parallel to each other on said gate insulative film and electrically connected to each other, and defining a gap therebetween; a drain electrode provided in correspondence to the gap between said gate electrode portions; and a plurality of source electrode arranged parallel to each other in correspondence to said gate electrode portions and electrically connected to each other.

Claim 4

An electronic device comprising a thin film transistor comprising: a thin semiconductor film formed on a substrate; a gate insulative film formed on one surface of said thin semiconductor film; a plurality of gate electrode portions arranged parallel to each other on said gate insulative film and electrically connected to each other, and defining a gap therebetween; a drain electrode provided in correspondence to the gap between said gate electrode portions; and a plurality of source electrode arranged parallel to each other in correspondence to said gate electrode portions and electrically connected to each other.

Claim 5

An electronic device according to claim 2, wherein said gate electrodes have substantially a U-character shape.

Claim 6

An electronic device according to claim 2, wherein said source electrodes have substantially a U-character shape.

Claim 7

An electronic device according to claim 2, wherein said gate electrode and said source electrode have substantially a U-character shape.

Claim 8

An electronic device according to claim 2, wherein said source electrodes and/or said drain electrode are connected to said thin semiconductor film through an ohmic contact layer.

Claim 9

An electronic device according to claim 2, wherein said thin semiconductor film comprises an amorphous silicon film (a-Si film).

Claim 10

An electronic device according to claim 7, wherein said amorphous silicon film comprises hydrogen atoms (a-Si:H).

Claim 11

An electronic device according to claim 2, wherein said insulative film comprises at least a material selected from the group consisting of amorphous silicon nitride (a-SiN) and silicon oxide.

Claim 12

An electronic device according to claim 9, wherein said amorphous silicon nitride comprises hydrogen atoms (a-SiN:H).

Claim 13

An electronic device according to claim 2, wherein said thin semiconductor film is made of at least a material selected from the group consisting of germanium, silicon germanium, silicon carbide, CdS, and CdSe.

Claim 14

An electronic device according to claim 2, wherein said gate electrode comprises formed on the substrate.

Claim 15

An electronic device according to claim 2, wherein said drain electrode, said source electrodes, and said gate electrodes are formed on one side of said thin semiconductor film.

Claim 16

An electronic device according to claim 2, wherein said drain electrode and said source electrodes are formed on the side of said thin semiconductor film opposite to the side on which said gate electrodes are formed.

Claim 17

An electronic device comprising a pair of thin film transistors, said transistors each comprising: a semiconductor layer; an insulating layer formed on said semiconductor layer; a first common conductive layer formed on said semiconductor layer; source and drain electrodes patterned from said first common conductive layer; a second common conductive layer formed on said insulating layer; and a gate electrode comprising a plurality of gate electrode portions patterned from said second common conductive layer, said gate electrode portions being formed opposite to and overlapping with said source and drain electrodes, at least a portion thereof overlapping with respect to a plan view, wherein said insulating layer is formed between at least a portion of said gate electrode portions and said source or said drain electrode, respectively, and wherein an output of one of said pair of thin film transistors due to a first parasitic capacitance of the overlap between said gate electrode portions and said drain electrode or said source electrode thereof, is compensated for by an output of the other of said pair of thin film transistors due to a second parasitic capacitance of the overlap between the said gate electrode portions and said drain electrode or said source electrode of said other of said transistors.

Claim 18

An electronic device comprising a pair of thin film transistors, said transistors each comprising: a semiconductor layer; an insulating layer formed on said semiconductor layer; a first common conductive layer formed on said semiconductor layer; source and drain electrodes patterned from said first common conductive layer; a second common conductive layer formed on said insulating layer; and a gate electrode comprising a plurality of gate electrode portions patterned from said second common conductive layer, said gate electrode portions being formed opposite to and overlapping with said source and drain electrodes, at least a portion thereof overlapping with respect to a plan view, wherein said insulating layer is formed between at least a portion of said gate electrode portions and said source or said drain electrode, respectively, and wherein an output of one of said pair of thin film transistors due to a first parasitic capacitance of the overlap between said gate electrode portions and said drain electrode or said source electrode thereof, is compensated for by an output of the other of said pair of thin film transistors due to a second parasitic capacitance of the overlap between the said gate electrode portions and said drain electrode or said source electrode of said other of said transistors.

Claim 19

A thin film transistor comprising: U-shaped gate electrode comprising parallel sections; a thin semiconductor film U-shaped electrode comprising one of a source electrode or a drain electrode, said U-shaped electrode being disposed outside of said parallel sections of said gate electrode, wherein said thin semiconductor film is disposed between said U-shaped electrode and said U-shaped gate electrode; an additional electrode comprising the other of said drain or said source electrode, said additional electrode being disposed between said parallel sections of said gate electrode; and gate insulative film disposed between said gate electrode and said thin semiconductor film.

Claim 20

A thin film transistor comprising: U-shaped gate electrode comprising parallel sections; a thin semiconductor film U-shaped electrode comprising one of a source electrode or a drain electrode, said U-shaped electrode being disposed outside of said parallel sections of said gate electrode, wherein said thin semiconductor film is disposed between said U-shaped electrode and said U-shaped gate electrode; an additional electrode comprising the other of said drain or said source electrode, said additional electrode being disposed between said parallel sections of said gate electrode; and gate insulative film disposed between said gate electrode and said thin semiconductor film.

Claim 21

An electronic device according to claim 16, wherein an ohmic contact layer is provided between said thin semiconductor film and at least one of said source electrode and said drain electrode for providing an electrical connection.

Claim 22

An electronic device according to claim 16, wherein said thin semiconductor film comprises an amorphous silicon film.

Claim 23

An electronic device according to claim 18, wherein said amorphous silicon film comprises hydrogen atoms.

Claim 24

An electronic device according to claim 16, wherein said insulative film comprises a material selected form the consisting and amorphus silicon nitride and silicon oxide.

Claim 25

An electronic device according to claim 20, wherein said amorphous silicon nitride comprises hydrogen atoms.

Claim 26

An electronic device according to claim 16, wherein said thin semiconductor film comprises a material selected from the group consisting of germanium, silicon germanium, silicon carbide, CdS, and CdSe.

Claim 27

An electronic device according to claim 16, wherein said gate electrode is formed on the substrate.