US4743567A
Expired / Lapsed
US
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Method of forming thin, defect-free, monocrystalline layers of semiconductor materials on insulators
Assignee: Philips North America LLC
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Filing: 1987-08-11
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Granted: 1988-05-10
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Expires: 2007-08-11
Abstract
Abstract A structure comprising thin defect-free monocrystalline layer of a silicon of an insulating layer is produced from a structure comprising a thin recrystallizable layer of silicon on an insulating layer by use of a low softening point insulating layer, scanning the structure relative to a zone heater the beams of which are focused on the recrystallizable silicon layer so as to form a melt zone having a convex solid-liquid interface in the silicon layer while forming a liquid area under the melt zone in the insulating layer.
Inventors
- 👤 Ranjana Pandya
- 👤 Andre M. Martinez
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 14:17
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3814; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2921; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/382; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S148/00; Y10S148/093; Y10S438/00; Y10S438/967
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
173 words
A method of forming a thin, defect free, monocrystalline layer of a semiconductor material on an insulator, said method comprising, (a) depositing a thin polycrystalline or amorphous layer of a semiconductor material on an insulating substrate having a softening point at least about 10° C. below the melting point of said semiconductor material and a slope of its viscosity versus temperature curve of less than zero and greater than negative infinity to form a layered structure; (b) heating said layered structure from a zone heating source in such a manner so as to provide a convex solid-liquid interface in said layer of said semiconductor material while scanning said layered structure relative to said zone heating source and heating said substrate at its annealing point; and (c) controlling the scanning speed of said layered structure relative to said zone heating source so as to cause said convex solid-liquid interface to move along said layer of semiconductor material while the surface of the substrate opposing the semiconductor material is liquified under said convex solid-liquid interface.
Claim 2
Independent Claim
173 words
A method of forming a thin, defect free, monocrystalline layer of a semiconductor material on an insulator, said method comprising, (a) depositing a thin polycrystalline or amorphous layer of a semiconductor material on an insulating substrate having a softening point at least about 10° C. below the melting point of said semiconductor material and a slope of its viscosity versus temperature curve of less than zero and greater than negative infinity to form a layered structure; (b) heating said layered structure from a zone heating source in such a manner so as to provide a convex solid-liquid interface in said layer of said semiconductor material while scanning said layered structure relative to said zone heating source and heating said substrate at its annealing point; and (c) controlling the scanning speed of said layered structure relative to said zone heating source so as to cause said convex solid-liquid interface to move along said layer of semiconductor material while the surface of the substrate opposing the semiconductor material is liquified under said convex solid-liquid interface.
Claim 3
Independent Claim
174 words
A method of forming a thin, defect free, monocrystalline layer of a silicon on an insulator, said method comprising, (a) depositing a thin polycrystalline or amorphous layer of a silicon on an insulating glass substrate having a softening point at least about 10° C. below the melting point of said silicon layer and a slope of its viscosity versus temperature curve of less than zero but greater than negative infinity to form a layered structure; (b) heating said layered structure from a zone heating source in such a manner so as to provide a convex solid-liquid interface in said layer of said silicon while scanning said layer of silicon relative to said zone heating source and heating said insulating glass substrate at its annealing point; and (c) controlling the scanning speed of layered structure relative to said zone heating source so as to cause said convex solid-liquid interface to move along said layer of silicon while the surface of the insulating glass layer opposing said silicon layer is liquified under said convex solid-liquid interface.
Claim 4
Independent Claim
174 words
A method of forming a thin, defect free, monocrystalline layer of a silicon on an insulator, said method comprising, (a) depositing a thin polycrystalline or amorphous layer of a silicon on an insulating glass substrate having a softening point at least about 10° C. below the melting point of said silicon layer and a slope of its viscosity versus temperature curve of less than zero but greater than negative infinity to form a layered structure; (b) heating said layered structure from a zone heating source in such a manner so as to provide a convex solid-liquid interface in said layer of said silicon while scanning said layer of silicon relative to said zone heating source and heating said insulating glass substrate at its annealing point; and (c) controlling the scanning speed of layered structure relative to said zone heating source so as to cause said convex solid-liquid interface to move along said layer of silicon while the surface of the insulating glass layer opposing said silicon layer is liquified under said convex solid-liquid interface.
Claim 5
Independent Claim
139 words
A method of forming a thin, defect-free monocrystalline layer of silicon on an insulator, said method comprising, (a) depositing a thin polycrystalline or amorphous layer of silicon on a glass substrate selected from the group consisting of phosphosilicate glass, borophosphosilicate glass and aluminosilicate and spin-on glass. (b) heating said layered structure from a zone heating source in such a manner so as to provide a convex solid-liquid interface in said silicon layer while scanning said layered structure relative to said zone heating source and heating said glass substrate at its annealing point; and (c) controlling the scanning speed of said layered structure relative to said zone heating source so as to cause movement of said solid-liquid interface along said silicon layer while the surface of said glass substrate opposing said silicon layer is liquified under said convex solid-liquid interface.
Claim 6
Independent Claim
139 words
A method of forming a thin, defect-free monocrystalline layer of silicon on an insulator, said method comprising, (a) depositing a thin polycrystalline or amorphous layer of silicon on a glass substrate selected from the group consisting of phosphosilicate glass, borophosphosilicate glass and aluminosilicate and spin-on glass. (b) heating said layered structure from a zone heating source in such a manner so as to provide a convex solid-liquid interface in said silicon layer while scanning said layered structure relative to said zone heating source and heating said glass substrate at its annealing point; and (c) controlling the scanning speed of said layered structure relative to said zone heating source so as to cause movement of said solid-liquid interface along said silicon layer while the surface of said glass substrate opposing said silicon layer is liquified under said convex solid-liquid interface.
Claim 7
Dependent Claim
32 words
The method of claim 2 wherein the insulating glass substrate is a thin layer supported at its surface opposite to that of the silicon layer by a oxidized silicon or quartz substrate.
Claim 8
Dependent Claim
29 words
The method of claim 2 wherein both surfaces of the thin polycrystalline or amorphous silicon layer are provided with a low temperature chemical vapor deposited coating of silicon dioxide.
Claim 9
Dependent Claim
16 words
The method of claim 2 wherein the thin silicon layer is less than 10 microns thick.
Claim 10
Dependent Claim
29 words
The method of claim 3 wherein both surfaces of the thin polycrystalline or amorphous silicon layer are provided with a low temperature chemical vapor deposited coating f silicon dioxide.
Claim 11
Dependent Claim
17 words
The method of claim 3 wherein the scanning speed is less than about 200 microns per second.
Claim 12
Dependent Claim
23 words
The method of claim 4 wherein the insulating glass layer is a layer of phosphosilicate glass, borophosphosilicate glass, aluminosilicate glass or spin-on glass.
Claim 13
Dependent Claim
16 words
The method of claim 4 wherein the thin silicon layer is less than 10 microns thick.
Claim 14
Dependent Claim
15 words
The method of claim 6 wherein the thin silicon layer is 2000 Å- 10μ thick.
Claim 15
Dependent Claim
16 words
The method of claim 9 wherein the scanning speed is less than 1 mm per second.
Claim 16
Dependent Claim
15 words
The method of claim 10 wherein the thin silicon layer is 2000 Å- 10μ thick.
Claim 17
Dependent Claim
14 words
The method of claim 11 wherein the thin silicon layer is chemically vapor deposited.
Claim 18
Dependent Claim
14 words
The method of claim 13, wherein the thin silicon layer is chemically vapor deposited.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1991-05-10 | 1991-11-09 | 1992-05-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-05-10 | 1995-11-09 | 1996-05-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-05-10 | 1999-11-09 | 2000-05-10 | $7700.00 | Window Closed / Lapsed |