US4564403A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Single-crystal semiconductor devices and method for making them
Assignee: Sony Corp
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Filing: 1984-01-27
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Granted: 1986-01-14
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Expires: 2004-01-27
Abstract
Abstract A large, single-crystal semiconductor device is made from a substrate having a layer of polycrystalline or amorphous material thereon by exposing a region of the layer to a beam of electrons to melt the region and then solidifying the molten region from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction to form a single-crystal seed in the region. An operating layer of polycrystalline or amorphous material on the substrate in contact with the seed is scanned with a beam of electrons having a strip-like configuration. The beam remelts a portion of the seed and creates a molten zone in the layer that recrystallizes as a single crystal by lateral epitaxial recrystallization from the seed.
Inventors
- 👤 Yoshinari Hayafuji
- 👤 Akashi Sawada
- 👤 Setsuo Usui
- 👤 Akikazu Shibata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 10:44
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/32; H10P14/3242; C; C30; C30B; C30B13/00; C30B13/16; C30B13/22; C30B13/34; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P14/2911; H10P14/2921; H10P14/2922; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3238; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/38; H10P14/3802; H10P14/3818; H10P14/382; H10P95/00; H10P95/90; Y; Y10; Y10S; Y10S117/00; Y10S117/905; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
162 words
A method of making a large, single-crystal semiconductor article, comprising the steps of: providing a wafer including a substrate having thereon a seed layer of polycrystalline or amorphous material; exposing a region of said seed layer to a beam of electrons to melt said region; solidifying said molten region from one end of said region in a first direction and outwardly toward the edges of said region in a second direction substantially normal to said first direction for forming a seed comprising substantially a single crystal in said region; and scanning an operating layer of polycrystalline or amorphous material on said substrate in contact with said seed with a beam of electrons having a strip-like configuration by moving said wafer and said beam relative to each other in said second direction to remelt a portion of said seed and to create a molten zone in said operating layer that recrystallizes substantially as a single crystal by lateral epitaxial recrystallization from said seed.
Claim 2
Independent Claim
162 words
A method of making a large, single-crystal semiconductor article, comprising the steps of: providing a wafer including a substrate having thereon a seed layer of polycrystalline or amorphous material; exposing a region of said seed layer to a beam of electrons to melt said region; solidifying said molten region from one end of said region in a first direction and outwardly toward the edges of said region in a second direction substantially normal to said first direction for forming a seed comprising substantially a single crystal in said region; and scanning an operating layer of polycrystalline or amorphous material on said substrate in contact with said seed with a beam of electrons having a strip-like configuration by moving said wafer and said beam relative to each other in said second direction to remelt a portion of said seed and to create a molten zone in said operating layer that recrystallizes substantially as a single crystal by lateral epitaxial recrystallization from said seed.
Claim 3
Dependent Claim
85 words
A method as in claim 1; comprising the step of providing a substrate base and a thermal layer on said substrate base including a heat-insulating layer underlying said region and forming a fence enclosing said region and further comprising the steps of: removing from one side of said region said fence extending in said first direction after said seed is formed; and providing said operating layer as a substantially continuous layer of polycrystalline or amorphous material in contact with said one side of said region.
Claim 4
Dependent Claim
77 words
A method as in claim 2; wherein said seed layer substantially covers said substrate, the method further comprising the steps of: depositing a mask on said seed and leaving exposed the remainder of said seed layer and one side of said fence; removing said remainder of said seed layer and said one side of said fence by etching; removing said mask; and depositing said operating layer partially over said seed and extending therefrom in said second direction.
Claim 5
Dependent Claim
25 words
A method as in claim 3; further comprising removing a polycrystalline portion of the solidified region of said seed layer after formation of said seed.
Claim 6
Dependent Claim
16 words
A method as in claim 1; wherein said seed layer and said operating layer are polysilicon.
Claim 7
Dependent Claim
46 words
A method as in claim 1; wherein said seed layer has a first thickness and said molten region has a depth less than said first thickness and said operating layer has a second thickness and said molten zone has a depth less than said second thickness.
Claim 8
Dependent Claim
34 words
A method as in claim 1; wherein said exposing step includes exposing a plurality of regions of said seed layer to said beam to form a plurality of said seeds in said seed layer.
Claim 9
Dependent Claim
64 words
A method as in claim 1; wherein said seeds are rectangular with the longer side thereof in said first direction and are spaced apart in said second direction with said operating layer therebetween and said scanning is effected by moving a rectangular beam of electrons relative to said wafer with the longer side of the beam parallel to the longer side of said seeds.
References Cited (Backward Citations)
GB1029663A
Cited
GB1037909A
Cited
US4187126A
Cited
US4305973A
Cited
US4309225A
Cited
US4395433A
Cited
US4323417A
Cited
US4446373A
Cited
US4382186A
Cited
US4371421A
Cited
US4448632A
Cited
US4414242A
Cited
US4479847A
Cited
US4473433A
Cited
GB2142346A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-01-13 | 1989-07-15 | 1990-01-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-01-13 | 1993-07-15 | 1994-01-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-01-13 | 1997-07-15 | 1998-01-14 | $7700.00 | Window Closed / Lapsed |