US4395433A
Expired / Lapsed
US
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Method for manufacturing a semiconductor device having regions of different thermal conductivity
Assignee: Toshiba Corp
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Filing: 1980-11-18
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Granted: 1983-07-26
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Expires: 2000-11-18
Abstract
Abstract In gas phase growth of a polysilicon layer on a semiconductor substrate, a silicon layer of a single-crystal structure or a structure akin thereto may be formed only on an exposed surface of the substrate surrounded by an insulating film for element isolation by applying an energy beam to the substrate. A semiconductor device obtained by forming such an element as an MOS transistor on the silicon layer is free from any difference in level between an element region and an element isolation region, and hence from snapping or disconnection of any wiring traversing the boundary between those regions.
Inventors
- 👤 Yoshihide Nagakubo
- 👤 Susumu Kohyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 02:36
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P34/00; H10P34/40; H10P34/42; H10P95/00; H10P95/90; H10W10/01; H10W10/011; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S148/00; Y10S148/091; Y10S148/093
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
100 words
In a method for manufacturing a semiconductor device, the process comprising the steps of: a. forming an insulating film on selected portions of a semiconductor substrate; and b. tending to accumulate polysilicon on the entire surface of the insulating film and the exposed portions of the semiconductor substrate simultaneous with or followed by exposing said polysilicon to an energy beam, whereby the polysilicon tending to accumulate on the exposed portions of the semiconductor substrate is crystallized to silicon and the polysilicon tending to accumulate on the surface of the insulating film is not crystallized but scattered by the energy beam.
Claim 2
Dependent Claim
100 words
In a method for manufacturing a semiconductor device, the process comprising the steps of: a. forming an insulating film on selected portions of a semiconductor substrate; and b. tending to accumulate polysilicon on the entire surface of the insulating film and the exposed portions of the semiconductor substrate simultaneous with or followed by exposing said polysilicon to an energy beam, whereby the polysilicon tending to accumulate on the exposed portions of the semiconductor substrate is crystallized to silicon and the polysilicon tending to accumulate on the surface of the insulating film is not crystallized but scattered by the energy beam.
Claim 3
Dependent Claim
105 words
In a method for manufacturing a semiconductor device, the process comprising the steps of: a. forming an insulating film on selected portions of a semiconductor substrate; b. tending to accumulate polysilicon on the entire surface of the insulating film and the exposed portions of the semiconductor substrate; and c. exposing said polysilicon to an energy beam simultaneous with said step of tending to accumulate polysilicon, whereby the polysilicon tending to accumulate on the exposed portion of the semiconductor substrate is crystallized to silicon and the polysilicon tending to accumulate on the surface of the insulating film is not crystallized but scattered by the energy beam.
Claim 4
Dependent Claim
105 words
In a method for manufacturing a semiconductor device, the process comprising the steps of: a. forming an insulating film on selected portions of a semiconductor substrate; b. tending to accumulate polysilicon on the entire surface of the insulating film and the exposed portions of the semiconductor substrate; and c. exposing said polysilicon to an energy beam simultaneous with said step of tending to accumulate polysilicon, whereby the polysilicon tending to accumulate on the exposed portion of the semiconductor substrate is crystallized to silicon and the polysilicon tending to accumulate on the surface of the insulating film is not crystallized but scattered by the energy beam.
Claim 5
Dependent Claim
104 words
In a method for manufacturing a semiconductor device, the process comprising the steps of: a. forming an insulating film on selected portions of a semiconductor substrate; b. tending to accumulate polysilicon on the entire surface of the insulating film and the exposed portions of the semiconductor substrate; and c. exposing said polysilicon to an energy beam after said step of tending to accumulate polysilicon, whereby the polysilicon tending to accumulate on the exposed portion of the semiconductor substrate is crystallized to silicon and the polysilicon tending to accumulate on the surface of the insulating film is not crystallized but scattered by the energy beam.
Claim 6
Dependent Claim
104 words
In a method for manufacturing a semiconductor device, the process comprising the steps of: a. forming an insulating film on selected portions of a semiconductor substrate; b. tending to accumulate polysilicon on the entire surface of the insulating film and the exposed portions of the semiconductor substrate; and c. exposing said polysilicon to an energy beam after said step of tending to accumulate polysilicon, whereby the polysilicon tending to accumulate on the exposed portion of the semiconductor substrate is crystallized to silicon and the polysilicon tending to accumulate on the surface of the insulating film is not crystallized but scattered by the energy beam.
Claim 7
Dependent Claim
22 words
A process according to any one of claims 1-3, wherein said energy beam is a laser beam, electron beam, or ion beam.
Claim 8
Dependent Claim
28 words
A process according to any one of claims 1-3, wherein said semiconductor substrate is formed of silicon, and said insulating film is formed of SiO 2 or PSG.
Claim 9
Dependent Claim
157 words
In a method for manufacturing a semiconductor device, wherein at least one first region of a semiconductor substrate or a layer thereon has thermal conductivity sufficient to permit the diffusion into said region or layer of energy applied to the surface thereof and at least one second region of said semiconductor substrate or a layer thereon has poor thermal conductivity relative said first region and tends to concentrate on the surface thereof energy applied thereto, the process comprising the steps of tending to accumulate polysilicon on the entire exposed surfaces of the semiconductor substrate and any layers thereon, including surfaces of said first and second regions, simultaneous with or followed by exposing said polysilicon to an energy beam, whereby the polysilicon tending to accumulate on the surface of said first region is crystallized to silicon and the polysilicon tending to accumulate on the surface of said second region is not crystallized but scattered by said energy beam.
Claim 10
Dependent Claim
157 words
In a method for manufacturing a semiconductor device, wherein at least one first region of a semiconductor substrate or a layer thereon has thermal conductivity sufficient to permit the diffusion into said region or layer of energy applied to the surface thereof and at least one second region of said semiconductor substrate or a layer thereon has poor thermal conductivity relative said first region and tends to concentrate on the surface thereof energy applied thereto, the process comprising the steps of tending to accumulate polysilicon on the entire exposed surfaces of the semiconductor substrate and any layers thereon, including surfaces of said first and second regions, simultaneous with or followed by exposing said polysilicon to an energy beam, whereby the polysilicon tending to accumulate on the surface of said first region is crystallized to silicon and the polysilicon tending to accumulate on the surface of said second region is not crystallized but scattered by said energy beam.
Claim 11
Dependent Claim
154 words
In a method for manufacturing a semiconductor device, wherein at least one first region of a semiconductor substrate or a layer thereon has thermal conductivity sufficient to permit the diffusion into said region or layer of energy applied to the surface thereof and at least one second region of the semiconductor substrate or a layer thereon has poor thermal conductivity relative said first region and tends to concentrate on the surface thereof energy applied thereto, the process comprising the steps of tending to accumulate polysilicon on the entire exposed surfaces of the semiconductor substrate and any layers thereon, including surfaces of said first and second regions, simultaneous with exposing said polysilicon to an energy beam, whereby the polysilicon tending to accumulate on the surface of said first region is crystallized to silicon and the polysilicon tending to accumulate on the surface of said second region is not crystallized but scattered by said energy beam.
Claim 12
Dependent Claim
154 words
In a method for manufacturing a semiconductor device, wherein at least one first region of a semiconductor substrate or a layer thereon has thermal conductivity sufficient to permit the diffusion into said region or layer of energy applied to the surface thereof and at least one second region of the semiconductor substrate or a layer thereon has poor thermal conductivity relative said first region and tends to concentrate on the surface thereof energy applied thereto, the process comprising the steps of tending to accumulate polysilicon on the entire exposed surfaces of the semiconductor substrate and any layers thereon, including surfaces of said first and second regions, simultaneous with exposing said polysilicon to an energy beam, whereby the polysilicon tending to accumulate on the surface of said first region is crystallized to silicon and the polysilicon tending to accumulate on the surface of said second region is not crystallized but scattered by said energy beam.
Claim 13
Dependent Claim
153 words
In a method for manufacturing a semiconductor device, wherein at least one region of a semiconductor substrate or a layer thereon has thermal conductivity sufficient to permit the diffusion into said region or layer of energy applied to the surface thereof, and at least one second region of the semiconductor substrate or a layer thereon has poor thermal conductivity relative said first region and tends to concentrate on the surface thereof energy applied thereto, the process comprising the steps of tending to accumulate polysilicon on the entire exposed surfaces of the semiconductor substrate and any layers thereon, including surfaces of said first and second regions, followed by exposing said polysilicon to an energy beam, whereby the polysilicon tending to accumulate on the surface of said first region is crystallized to silicon and the polysilicon tending to accumulate on the surface of said second region is not crystallized but scattered by said energy beam.
Claim 14
Dependent Claim
153 words
In a method for manufacturing a semiconductor device, wherein at least one region of a semiconductor substrate or a layer thereon has thermal conductivity sufficient to permit the diffusion into said region or layer of energy applied to the surface thereof, and at least one second region of the semiconductor substrate or a layer thereon has poor thermal conductivity relative said first region and tends to concentrate on the surface thereof energy applied thereto, the process comprising the steps of tending to accumulate polysilicon on the entire exposed surfaces of the semiconductor substrate and any layers thereon, including surfaces of said first and second regions, followed by exposing said polysilicon to an energy beam, whereby the polysilicon tending to accumulate on the surface of said first region is crystallized to silicon and the polysilicon tending to accumulate on the surface of said second region is not crystallized but scattered by said energy beam.
Claim 15
Dependent Claim
22 words
A process according to any one of claims 6-8, wherein said energy beam is a laser beam, electron beam, or ion beam.
Claim 16
Dependent Claim
28 words
A process according to any one of claims 6-8, wherein said semiconductor substrate is formed of silicon, and said insulating film is formed of SiO 2 or PSG.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-07-25 | 1987-01-24 | 1987-07-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-07-25 | 1991-01-24 | 1991-07-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-07-25 | 1995-01-24 | 1995-07-26 | $7700.00 | Window Closed / Lapsed |