US4473433A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing dielectrically isolated single crystal silicon devices
Assignee: Nokia Bell Labs
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Filing: 1982-06-18
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Granted: 1984-09-25
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Expires: 2002-06-18
Abstract
Abstract Well-oriented device quality silicon is formed on a dielectric material through a specific melting procedure. In this procedure, a body including polycrystalline or amorphous silicon overlying a dielectric is heated to a temperature close to the melting point of silicon. A narrow region of the amorphous or polycrystalline silicon whose length is substantially longer than its width is then melted using an energy source such as a laser. This long, narrow region is propagated through the amorphous or polycrystalline silicon to produce the desired device quality material.
Inventors
- 👤 Martin A. Bosch
- 👤 Ross A. Lemons
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 07:41
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; C; C30; C30B; C30B13/00; C30B13/16; C30B13/22; C30B13/24; C30B29/00; C30B29/60; H10P14/24; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3466; H10P14/36; H10P14/3602; H10P14/38; H10P14/3802; H10P14/3808; H10P14/381; H10P14/3814; H10P14/382; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
98 words
A process for producing device quality silicon overlying a dielectric material by treating at least a portion of a non-single crystalline silicon region which overlies said dielectric material, said process comprising the steps of heating said portion of said non-single crystalline silicon region to a temperature in the range of 1000 to 1400 degrees C., establishing a molten zone in said non-single crystalline silicon region which is narrower than 250 μm with a length of said zone which is at least 5 times its width, and traversing said zone across said portion of said non-single crystalline silicon region.
Claim 2
Dependent Claim
98 words
A process for producing device quality silicon overlying a dielectric material by treating at least a portion of a non-single crystalline silicon region which overlies said dielectric material, said process comprising the steps of heating said portion of said non-single crystalline silicon region to a temperature in the range of 1000 to 1400 degrees C., establishing a molten zone in said non-single crystalline silicon region which is narrower than 250 μm with a length of said zone which is at least 5 times its width, and traversing said zone across said portion of said non-single crystalline silicon region.
Claim 3
Dependent Claim
13 words
The process of claim 1 wherein said zone is narrower than 100 μm.
Claim 4
Dependent Claim
13 words
The process of claim 1 wherein said non-single crystalline silicon is polycrystalline silicon.
Claim 5
Dependent Claim
12 words
The process of claim 1 wherein said dielectric material is fused quartz.
Claim 6
Dependent Claim
13 words
The process of claim 1 wherein said dielectric material is a silicon oxide.
Claim 7
Dependent Claim
40 words
The process of either claim 1 or 5 wherein said molten zone is established in a single crystal silicon region adjoining said non-single crystal silicon region and then propagated through at least a portion of said non-single crystalline silicon region.
Claim 8
Dependent Claim
17 words
The process of claim 6 wherein said molten zone is formed by using light from a laser.
Claim 9
Dependent Claim
17 words
The process of claim 1 wherein said molten zone is formed by using light from a laser.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-09-25 | 1988-03-26 | 1988-09-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-09-25 | 1992-03-26 | 1992-09-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-09-25 | 1996-03-26 | 1996-09-25 | $7700.00 | Window Closed / Lapsed |