US2819191A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating a p-n junction
Assignee: AT&T Inc
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Filing: 1954-05-27
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Granted: 1958-01-07
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Expires: 1974-05-27
Abstract
No abstract record available.
Inventors
- 👤 Calvin S Fuller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 17:04
CPC Classifications
H; H10; H10P; H10P95/00; C; C22; C22F; C22F1/00; C22F1/16; C30; C30B; C30B31/00; C30B31/02; G; G01; G01R; G01R31/00; G01R31/26; H10P95/50
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
51 words
THE METHOD OF PRODUCING A BODY OF STABLE P-TYPE SILICON WHICH COMPRISES HEATING SAID BODY AT A TEMPERATURE BETWEEN 350*C. AND 500*C. FOR FROM ONE TO FORTY-EIGHT HOURS, THEN HEATING SAID BODY AT A TEMPERATURE BETWEEN 900*C. AND 1300*C. FOR A PERIOD IN EXCESS OF 15 HOURS, AND COOLING SAID BODY.
Claim 2
Independent Claim
51 words
THE METHOD OF PRODUCING A BODY OF STABLE P-TYPE SILICON WHICH COMPRISES HEATING SAID BODY AT A TEMPERATURE BETWEEN 350*C. AND 500*C. FOR FROM ONE TO FORTY-EIGHT HOURS, THEN HEATING SAID BODY AT A TEMPERATURE BETWEEN 900*C. AND 1300*C. FOR A PERIOD IN EXCESS OF 15 HOURS, AND COOLING SAID BODY.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1961-01-06 | 1961-07-08 | 1962-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1965-01-06 | 1965-07-08 | 1966-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1969-01-06 | 1969-07-08 | 1970-01-07 | $7700.00 | Window Closed / Lapsed |