US2629672A
Expired / Lapsed
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Method of making semiconductive translating devices
Assignee: AT&T Inc
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Filing: 1949-07-07
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Granted: 1953-02-24
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Expires: 1969-07-07
Abstract
No abstract record available.
Inventors
- 👤 Sparks Morgan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 18:54
CPC Classifications
H; H10; H10P; H10P10/00; H10P10/12
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
81 words
THE METHOD OF MAKING A SEMICONDUCTIVE BODY FOR TRANSLATING DEVICES WHICH COMPRISES DROPPING A GLOBULE OF MOLTEN P CONDUCTIVITY TYPE SEMICONDUCTIVE MATERIAL SELECTED FROM THE GROUP CONSISTING OF GERMANIUM AND SILICON, UPON A HEATED BODY IN N CONDUCTIVITY TYPE MATERIAL SELETED FROM THE GROUP CONSISTING OF GERMANIUM AND SILICON, IN AN OXYGEN FREE ATMOSPHERE, COOLINGG THE GLOBULE BASE UNIT, AND HEATING THE UNIT THUS FROMED TO RECONVERT TO N-TYPE ANY OF THE INITIALLY N-TYPE MATERIAL THAT HAD BEEN CONVERTED TO P-TYPE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1956-02-24 | 1956-08-25 | 1957-02-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1960-02-24 | 1960-08-25 | 1961-02-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1964-02-24 | 1964-08-25 | 1965-02-24 | $7700.00 | Window Closed / Lapsed |