Patent US6165834A successfully refreshed from Google Patents.
US6165834A
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Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell
Assignee: Round Rock Research LLC
•
Filing: 1998-05-07
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Granted: 2000-12-26
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Expires: 2018-05-07
Abstract
Abstract The invention comprises methods of forming capacitors, methods of processing dielectric layers, and methods of forming a DRAM cell. In one implementation, a method of processing a dielectric layer comprises forming a high K oxygen containing dielectric layer over a substrate. The high K dielectric layer is annealed at a temperature of at least about 200° C. and at a pressure of at least about 50 Torr in an ozone comprising atmosphere. In another implementation, annealing of the high K dielectric layer is conducted at a temperature of at least about 200° C. and at a pressure of at least about 0.1 Torr in an ozone comprising atmosphere which is void of plasma. Pressures of greater than one atmosphere are most preferred. In another implementation, annealing of the high K capacitor dielectric layer is conducted at a substrate temperature of at least about 300° C. in an activated oxygen atmosphere produced at least in part from oxygen subjected to remote microwave plasma. The processing is ideally implemented in capacitor fabrication, and more particularly in DRAM circuitry fabrication.
Inventors
- 👤 Vishnu K. Agarwal
- 👤 Garo J. Derderian
- 👤 Gurtej S. Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 12:55
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6516; H10P14/6529; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10P14/6536; H10P14/6538; H10B; H10B12/00; H10B12/30; H10B12/31; H10B12/312; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; H10P14/69398
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
90 words
A method of forming a capacitor comprising: forming a first capacitor electrode over a substrate; forming a high K oxygen containing capacitor dielectric layer over the first capacitor electrode; annealing the high K capacitor dielectric layer at a substrate temperature of at least about 200° C. and at a pressure of greater than 1 atmosphere in an atmosphere comprising ozone and which is void of plasma, effective to densify the high K capacitor dielectric layer; and forming a second capacitor electrode over the high K oxygen containing capacitor dielectric layer.
Claim 2
Independent Claim
90 words
A method of forming a capacitor comprising: forming a first capacitor electrode over a substrate; forming a high K oxygen containing capacitor dielectric layer over the first capacitor electrode; annealing the high K capacitor dielectric layer at a substrate temperature of at least about 200° C. and at a pressure of greater than 1 atmosphere in an atmosphere comprising ozone and which is void of plasma, effective to densify the high K capacitor dielectric layer; and forming a second capacitor electrode over the high K oxygen containing capacitor dielectric layer.
Claim 3
Dependent Claim
18 words
The method of claim 1 wherein the annealing is conducted at a pressure of at least 2 atmospheres.
Claim 4
Dependent Claim
21 words
The method of claim 2 wherein the annealing is conducted at a pressure of less than or equal to 5 atmospheres.
Claim 5
Dependent Claim
18 words
The method of claim 1 wherein the annealing is conducted in the presence of ozone generating ultraviolet light.
Claim 6
Dependent Claim
16 words
The method of claim 1 wherein the annealing is conducted before forming the second capacitor electrode.
Claim 7
Dependent Claim
19 words
The method of claim 1 wherein the annealing substrate temperature is less than or equal to about 800° C.
Claim 8
Independent Claim
65 words
A method of processing a dielectric layer comprising: forming a high K oxygen containing dielectric layer over a substrate; and annealing the high K dielectric layer at a substrate temperature of at least about 200° C. and at a pressure of greater than 1 atmosphere in an atmosphere comprising ozone and which is void of plasma, effective to densify the high K capacitor dielectric layer.
Claim 9
Independent Claim
65 words
A method of processing a dielectric layer comprising: forming a high K oxygen containing dielectric layer over a substrate; and annealing the high K dielectric layer at a substrate temperature of at least about 200° C. and at a pressure of greater than 1 atmosphere in an atmosphere comprising ozone and which is void of plasma, effective to densify the high K capacitor dielectric layer.
Claim 10
Dependent Claim
17 words
The method of claim 7 wherein the annealing is conducted at a pressure of at least atmospheres.
Claim 11
Dependent Claim
21 words
The method of claim 8 wherein the annealing is conducted at a pressure of less than or equal to 5 atmospheres.
Claim 12
Dependent Claim
18 words
The method of claim 7 wherein the annealing is conducted in the presence of ozone generating ultraviolet light.
Claim 13
Dependent Claim
19 words
The method of claim 16 wherein the annealing substrate temperature is less than or equal to about 800° C.
Claim 14
Independent Claim
87 words
A method of forming a capacitor comprising: forming a first capacitor electrode over a substrate; forming a high K oxygen containing capacitor dielectric layer over the first capacitor electrode; annealing the high K capacitor dielectric layer at a substrate temperature of at least about 200° C. in an activated oxygen atmosphere to produced at least in part from oxygen subjected to remote microwave plasma, and the annealing atmosphere being void of plasma; and forming a second capacitor electrode over the high K oxygen containing capacitor dielectric layer.
Claim 15
Independent Claim
87 words
A method of forming a capacitor comprising: forming a first capacitor electrode over a substrate; forming a high K oxygen containing capacitor dielectric layer over the first capacitor electrode; annealing the high K capacitor dielectric layer at a substrate temperature of at least about 200° C. in an activated oxygen atmosphere to produced at least in part from oxygen subjected to remote microwave plasma, and the annealing atmosphere being void of plasma; and forming a second capacitor electrode over the high K oxygen containing capacitor dielectric layer.
Claim 16
Dependent Claim
23 words
The method of claim 12 wherein the annealing is conducted at a pressure of at least 0.1 Torr and less than 20 Torr.
Claim 17
Dependent Claim
27 words
The method of claim 12 wherein the annealing is conducted at a pressure of at least 1 atmosphere effective to densify the high K capacitor dielectric layer.
Claim 18
Dependent Claim
26 words
The method of claim 12 wherein the annealing is conducted at a pressure of greater than 1 atmosphere and less than or equal to 5 atmospheres.
Claim 19
Dependent Claim
15 words
The method of claim 12 wherein the annealing is conducted in the presence of ozone.
Claim 20
Dependent Claim
16 words
The method of claim 12 wherein the annealing is conducted before forming the second capacitor electrode.
Claim 21
Dependent Claim
19 words
The method of claim 12 wherein the annealing substrate temperature is less than or equal to about 800° C.
Claim 22
Dependent Claim
30 words
The method of claim 12 wherein the annealing is conducted at a pressure of at least 1 atmosphere effective to reduce leakage current of the high K capacitor dielectric layer.
Claim 23
Independent Claim
132 words
A method of forming a DRAM cell comprising: forming a first capacitor electrode over a substrate; forming a high K oxygen containing capacitor dielectric layer over the first capacitor electrode; annealing the high K capacitor dielectric layer at a substrate temperature of at least about 200° C. and at a pressure of greater than 1 atmosphere in an atmosphere comprising ozone and which is void of plasma, effective to densify the high K capacitor dielectric layer; forming a second capacitor electrode over the high K oxygen containing capacitor dielectric layer; and providing a field effect transistor having a pair of source/drain regions, one of the source/drain regions being provided in electrical connection with the first capacitor electrode, the other of the source/drain regions being provided in electrical connection with a bit line.
Claim 24
Independent Claim
132 words
A method of forming a DRAM cell comprising: forming a first capacitor electrode over a substrate; forming a high K oxygen containing capacitor dielectric layer over the first capacitor electrode; annealing the high K capacitor dielectric layer at a substrate temperature of at least about 200° C. and at a pressure of greater than 1 atmosphere in an atmosphere comprising ozone and which is void of plasma, effective to densify the high K capacitor dielectric layer; forming a second capacitor electrode over the high K oxygen containing capacitor dielectric layer; and providing a field effect transistor having a pair of source/drain regions, one of the source/drain regions being provided in electrical connection with the first capacitor electrode, the other of the source/drain regions being provided in electrical connection with a bit line.
Claim 25
Dependent Claim
18 words
The method of claim 20 wherein the annealing is conducted at a pressure of at least 2 atmospheres.
Claim 26
Dependent Claim
21 words
The method of claim 21 wherein the annealing is conducted at a pressure of less than or equal to 5 atmospheres.
Claim 27
Dependent Claim
18 words
The method of claim 20 wherein the annealing is conducted in the presence of ozone generating ultraviolet light.
Claim 28
Dependent Claim
16 words
The method of claim 20 wherein the annealing is conducted before forming the second capacitor electrode.
Claim 29
Dependent Claim
19 words
The method of claim 20 wherein the annealing substrate temperature is less than or equal to about 800° C.
Claim 30
Independent Claim
128 words
A method of forming a DRAM cell comprising: forming a first capacitor electrode over a substrate; forming a high K oxygen containing capacitor dielectric layer over the first capacitor electrode; annealing the high K capacitor dielectric layer at a substrate temperature of at least about 300° C. in an activated oxygen atmosphere produced at least in part from oxygen subjected to remote microwave plasma, and the annealing atmosphere being void of plasma; forming a second capacitor electrode over the high K oxygen containing capacitor dielectric layer; and providing a field effect transistor having a pair of source/drain regions, one of the source/drain regions being provided in electrical connection with the first capacitor electrode, the other of the source/drain regions being provided in electrical connection with a bit line.
Claim 31
Independent Claim
128 words
A method of forming a DRAM cell comprising: forming a first capacitor electrode over a substrate; forming a high K oxygen containing capacitor dielectric layer over the first capacitor electrode; annealing the high K capacitor dielectric layer at a substrate temperature of at least about 300° C. in an activated oxygen atmosphere produced at least in part from oxygen subjected to remote microwave plasma, and the annealing atmosphere being void of plasma; forming a second capacitor electrode over the high K oxygen containing capacitor dielectric layer; and providing a field effect transistor having a pair of source/drain regions, one of the source/drain regions being provided in electrical connection with the first capacitor electrode, the other of the source/drain regions being provided in electrical connection with a bit line.
Claim 32
Dependent Claim
19 words
The method of claim 26 wherein the annealing substrate temperature is less than or equal to about 800° C.
Claim 33
Independent Claim
93 words
A method of forming a capacitor comprising: forming a first capacitor electrode over a substrate; forming a high K oxygen containing capacitor dielectric layer over the first capacitor electrode; annealing the high K capacitor dielectric layer at a substrate temperature of at least about 200° C. and at a pressure of greater than 1 atmosphere in an atmosphere comprising ozone and which is void of plasma, effective to reduce leakage current of the high K capacitor dielectric layer; and forming a second capacitor electrode over the high K oxygen containing capacitor dielectric layer.
Claim 34
Independent Claim
93 words
A method of forming a capacitor comprising: forming a first capacitor electrode over a substrate; forming a high K oxygen containing capacitor dielectric layer over the first capacitor electrode; annealing the high K capacitor dielectric layer at a substrate temperature of at least about 200° C. and at a pressure of greater than 1 atmosphere in an atmosphere comprising ozone and which is void of plasma, effective to reduce leakage current of the high K capacitor dielectric layer; and forming a second capacitor electrode over the high K oxygen containing capacitor dielectric layer.
Claim 35
Independent Claim
68 words
A method of processing a dielectric layer comprising: forming a high K oxygen containing dielectric layer over a substrate; and annealing the high K dielectric layer at a substrate temperature of at least about 200° C. and at a pressure of greater than 1 atmosphere in an atmosphere comprising ozone and which is void of plasma, effective to reduce leakage current of the high K capacitor dielectric layer.
Claim 36
Independent Claim
68 words
A method of processing a dielectric layer comprising: forming a high K oxygen containing dielectric layer over a substrate; and annealing the high K dielectric layer at a substrate temperature of at least about 200° C. and at a pressure of greater than 1 atmosphere in an atmosphere comprising ozone and which is void of plasma, effective to reduce leakage current of the high K capacitor dielectric layer.
Claim 37
Independent Claim
135 words
A method of forming a DRAM cell comprising: forming a first capacitor electrode over a substrate; forming a high K oxygen containing capacitor dielectric layer over the first capacitor electrode; annealing the high K capacitor dielectric layer at a substrate temperature of at least about 200° C. and at a pressure of greater than 1 atmosphere in an atmosphere comprising ozone and which is void of plasma, effective to reduce leakage current of the high K capacitor dielectric layer; forming a second capacitor electrode over the high K oxygen containing capacitor dielectric layer; and providing a field effect transistor having a pair of source/drain regions, one of the source/drain regions being provided in electrical connection with the first capacitor electrode, the other of the source/drain regions being provided in electrical connection with a bit line.
Claim 38
Independent Claim
135 words
A method of forming a DRAM cell comprising: forming a first capacitor electrode over a substrate; forming a high K oxygen containing capacitor dielectric layer over the first capacitor electrode; annealing the high K capacitor dielectric layer at a substrate temperature of at least about 200° C. and at a pressure of greater than 1 atmosphere in an atmosphere comprising ozone and which is void of plasma, effective to reduce leakage current of the high K capacitor dielectric layer; forming a second capacitor electrode over the high K oxygen containing capacitor dielectric layer; and providing a field effect transistor having a pair of source/drain regions, one of the source/drain regions being provided in electrical connection with the first capacitor electrode, the other of the source/drain regions being provided in electrical connection with a bit line.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-12-26 | 2004-06-26 | 2004-12-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-12-26 | 2008-06-26 | 2008-12-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-12-26 | 2012-06-26 | 2012-12-26 | $7700.00 | Window Closed / Lapsed |