US6015989A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a capacitor electrode formed of iridum or ruthenium and a quantity of oxygen
Assignee: Mitsubishi Electric Corp
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Filing: 1996-12-20
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Granted: 2000-01-18
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Expires: 2016-12-20
Abstract
Abstract A semiconductor device includes a semiconductor substrate having a major surface; a first interlayer insulating film formed on the semiconductor substrate and having an opening defined therein so as to open at the major surface of the semiconductor substrate; a connecting member made of Si as a principal component and embedded in the opening; a lower capacitor electrode connected electrically with the major surface of the semiconductor substrate through the connecting member; a capacitor dielectric film formed on the lower capacitor electrode; an upper capacitor electrode formed on the capacitor dielectric film; and a second interlayer insulating film formed on the capacitor upper electrode. The lower capacitor electrode referred to above is made of a principal component selected from the group consisting of ruthenium and iridium and contains oxygen in a quantity of 0.001 to 0.1% by atom and/or at least one impurity element in a quantity of 0.1 to 5% by atom. The impurity element is selected from the group consisting of titanium, chrome, tungsten, cobalt, palladium and molybdenum.
Inventors
- 👤 Tsuyosi Horikawa
- 👤 Tetsuro Makita
- 👤 Takeharu Kuroiwa
- 👤 Noboru Mikami
- 👤 Teruo Shibano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 12:57
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/694; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/0335
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
173 words
A semiconductor device comprising: a semiconductor substrate having a major surface; a first interlayer insulating film formed on said semiconductor substrate and having an opening defined therein which reaches the major surface of said semiconductor substrate; a connecting member made of Si as a principal component and embedded in the opening of said first interlayer insulating film; a lower capacitor electrode connected electrically with the major surface of said semiconductor substrate through said connecting member and made of a principal component selected from the group consisting of ruthenium and iridium, said lower capacitor electrode containing at least one of oxygen in a quantity of 0.001 to 0.1% by atom and at least one impurity element in a quantity of 0.1 to 5% by atom, said impurity element being selected from the group consisting of titanium, chrome, tungsten, cobalt, palladium and molybdenum; a capacitor dielectric film formed on said lower capacitor electrode; an upper capacitor electrode formed on said capacitor dielectric film; and a second interlayer insulating film formed on said upper capacitor electrode.
Claim 2
Dependent Claim
173 words
A semiconductor device comprising: a semiconductor substrate having a major surface; a first interlayer insulating film formed on said semiconductor substrate and having an opening defined therein which reaches the major surface of said semiconductor substrate; a connecting member made of Si as a principal component and embedded in the opening of said first interlayer insulating film; a lower capacitor electrode connected electrically with the major surface of said semiconductor substrate through said connecting member and made of a principal component selected from the group consisting of ruthenium and iridium, said lower capacitor electrode containing at least one of oxygen in a quantity of 0.001 to 0.1% by atom and at least one impurity element in a quantity of 0.1 to 5% by atom, said impurity element being selected from the group consisting of titanium, chrome, tungsten, cobalt, palladium and molybdenum; a capacitor dielectric film formed on said lower capacitor electrode; an upper capacitor electrode formed on said capacitor dielectric film; and a second interlayer insulating film formed on said upper capacitor electrode.
Claim 3
Dependent Claim
36 words
The semiconductor device according to claim 1, further comprising: a bond layer formed between said lower capacitor electrode and said first interlayer insulating film and/or between said upper capacitor electrode and said second interlayer insulating film.
Claim 4
Dependent Claim
50 words
The semiconductor device according to claim 2, wherein said bond layer is formed of a material selected from the group consisting of nitride titanium film, non-crystalline silicon film, and a laminated structure of nitride titanium film and non-crystalline silicon film, and has a film thickness not greater than 50 nm.
Claim 5
Dependent Claim
25 words
The semiconductor device according to claim 1, wherein said lower capacitor is made of ruthenium with an oxygen content of 0.001 to 0.1% by atom.
Claim 6
Dependent Claim
25 words
The semiconductor device according to claim 1, wherein said lower capacitor is made of iridium with an oxygen content of 0.001 to 0.1% by atom.
Claim 7
Dependent Claim
33 words
The semiconductor device according to claim 1, wherein said lower capacitor contains an impurity of 0.1 to 5% by atom selected from the group consisting of titanium, chrome, tungsten, cobalt, palladium, and molybdenum.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-01-17 | 2003-07-19 | 2004-01-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-01-17 | 2007-07-19 | 2008-01-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-01-17 | 2011-07-19 | 2012-01-18 | $7700.00 | Window Closed / Lapsed |