Abstract Processing techniques for processing high-dielectric-constant material are provided to allow for the formation of an electronic device (10) which comprises a inner electrode (24), a high-dielectric-constant layer (28), and an outer electrode (30). High-dielectric-constant layer (28) is subjected to ultraviolet radiation in an oxygen ozone ambient to eliminate various undesirable hydroxide and carbonate compounds. Layer (28) is further subjected to high pressure isotropic reactive ion etches prior to the deposition of layer (30). The interface between layer (28) and layer (30) is exposed to reactive fluorine and low pressure plasma to improve the fair electric properties and leakage currents associated with layer (28).
A method of forming an electronic device comprising the steps of: depositing a layer of barium strontium titanate material on a surface; irradiating the layer of barium strontium titanate material with ultraviolet radiation comprising photons more energetic than the band gap of the barium strontium titanate material in an ambient including ozone; and etching the outer surface of the layer of barium strontium titanate material in a reactive ion etch process which includes oxygen and argon to substantially reduce the amount of hydroxide and carbonate contaminants on the outer surface of the layer.
Claim 2
Independent Claim
93 words
A method of forming an electronic device comprising the steps of: depositing a layer of barium strontium titanate material on a surface; irradiating the layer of barium strontium titanate material with ultraviolet radiation comprising photons more energetic than the band gap of the barium strontium titanate material in an ambient including ozone; and etching the outer surface of the layer of barium strontium titanate material in a reactive ion etch process which includes oxygen and argon to substantially reduce the amount of hydroxide and carbonate contaminants on the outer surface of the layer.
Claim 3
Dependent Claim
26 words
The method of claim 1, wherein said step of etching comprises the step of etching at a temperature in the range of 300° to 600° C.
Claim 4
Dependent Claim
51 words
The method of claim 1, and further comprising the step of depositing a layer of outer electrode material outwardly from the layer of barium strontium titanate material without exposing the outer surface of the barium strontium titanate material to an air ambient prior to the deposition of the outer electrode material.