US4851895A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metallization for integrated devices
Assignee: Nokia Bell Labs
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Filing: 1987-06-03
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Granted: 1989-07-25
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Expires: 2007-06-03
Abstract
Abstract Metallization of integrated devices using ruthenium as a metallization material results in well-adhering contacts to source and drain regions as well as to gate oxide. Ruthenium is similarly suited as a diffusion barrier metallization between, e.g., silicon and aluminum and as an interconnection metallization material. And, as a diffusion barrier material, ruthenium dioxide may be used.
Inventors
- 👤 Martin L. Green
- 👤 Michal E. Gross
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:59
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
41 words
An integrated device comprising a body of semiconductor material and a diffusion barrier element, said diffusion barrier element being between a first metal element and a second metal element, the material of said diffusion barrier element consisting essentially of ruthenium dioxide.
Claim 2
Dependent Claim
41 words
An integrated device comprising a body of semiconductor material and a diffusion barrier element, said diffusion barrier element being between a first metal element and a second metal element, the material of said diffusion barrier element consisting essentially of ruthenium dioxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-24 | 1993-01-23 | 1993-07-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-24 | 1997-01-23 | 1997-07-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-24 | 2001-01-23 | 2001-07-25 | $7700.00 | Window Closed / Lapsed |