US4017890A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Intermetallic compound layer in thin films for improved electromigration resistance
Assignee: International Business Machines Corp
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Filing: 1975-10-24
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Granted: 1977-04-12
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Expires: 1995-10-24
Abstract
Abstract A method and resulting structure for forming narrow intermetallic stripes which will carry high currents on bodies such as semiconductors, integrated circuits, magnetic bubbles structures, etc. The conductive stripe includes aluminum or aluminum copper with at least one transition metal. The aluminum and at least one transition metal are deposited onto a supporting body at a very low pressure in a substantially oxygen-free high vacuum. The composite is then annealed at a temperature between about 200 DEG C and 525 DEG C for a time sufficient to form an aluminum and transition metal compound within the aluminum. The conductive stripes are then formed by masking and removing portions of the annealed metallic material. The resulting conductive stripes, which may be of a width of about 6x10<->4 inches or less, have a significantly improved electromigration performance without significantly increasing resistance in the conductive stripe.
Inventors
- 👤 James Kent Howard
- 👤 Paul Siu-Chung Ho
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 05:13
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/14; C23C14/16; C23C14/58; C23C14/5806; C23C14/5893; H; H01; H01B; H01B1/00; H01B1/02; H01B1/023; H01F; H01F10/00; H01F10/06; H10; H10P; H10P14/00; H10P14/40; H10P14/412; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W20/44; H10W20/4403; H10W20/4405; H10W20/4407; H10W20/45; H10W20/48; Y; Y10; Y10S; Y10S148/00; Y10S148/02; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49121; Y10T29/49204; Y10T428/00; Y10T428/12; Y10T428/12486
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
35 words
A current conductive stripe having minimum physical dimensions and being supported upon a substrate comprising: aluminum and at least one region within the aluminum stripe containing an intermetallic compound of aluminum and a transition metal.
Claim 2
Dependent Claim
35 words
A current conductive stripe having minimum physical dimensions and being supported upon a substrate comprising: aluminum and at least one region within the aluminum stripe containing an intermetallic compound of aluminum and a transition metal.
Claim 3
Dependent Claim
21 words
A current conductive stripe of claim 1 wherein the minimum physical dimensions is less than about 6 × 10.sup. -4 inches.
Claim 4
Dependent Claim
19 words
The conductive stripe of claim 1 wherein said intermetallic compound is between about 2 and 40 percent by weight.
Claim 5
Dependent Claim
20 words
The conductive stripe of claim 1 wherein said transition metal is chromium and the said compound is CrAl 7 .
Claim 6
Dependent Claim
20 words
The conductive stripe of claim 1 wherein said transition metal is hafnium and the said compound is HfAl 3 .
Claim 7
Dependent Claim
22 words
The conductive stripe of claim 4 wherein said intermetallic compound is between about 2 and 40 percent by weight of the stripe.
Claim 8
Dependent Claim
22 words
The conductive stripe of claim 5 wherein said intermetallic compound is between about 2 and 25 percent by weight of the stripe.
Claim 9
Dependent Claim
21 words
The conductive stripe of claim 1 wherein one said region is located near the center of the thickness of said stripe.
Claim 10
Dependent Claim
21 words
The conductive stripe of claim 1 wherein one said region is located near the bottom of the thickness of said stripe.
Claim 11
Dependent Claim
25 words
The conductive stripe of claim 1 wherein the said substrate upon which it is supported includes a magnetic material capable of forming magnetic bubbles therein.
Claim 12
Dependent Claim
18 words
The conductive stripe of claim 1 wherein the said substrate upon which it is supported includes semiconductor devices.
Claim 13
Dependent Claim
58 words
An integrated circuit structure comprising a plurality of semiconductor devices electrically connected by means of current conductive stripes which have a minimum physical dimension of less than about 6 × 10.sup. -4 inch, said stripes being composed of aluminum and at least one region within the aluminum stripe containing an intermetallic compound of aluminum and a transition metal.
Claim 14
Dependent Claim
58 words
An integrated circuit structure comprising a plurality of semiconductor devices electrically connected by means of current conductive stripes which have a minimum physical dimension of less than about 6 × 10.sup. -4 inch, said stripes being composed of aluminum and at least one region within the aluminum stripe containing an intermetallic compound of aluminum and a transition metal.
Claim 15
Dependent Claim
14 words
The integrated circuit structure of claim 12 wherein said structure is composed of silicon.
Claim 16
Dependent Claim
30 words
The integrated circuit structure of claim 12 wherein the transition metal is chromium and the aluminum chromium compound is between about 2 and 40 percent by weight of the stripe.
Claim 17
Dependent Claim
56 words
The integrated circuit structure comprising a plurality of semiconductor devices electrically connected by means of current conductive stripes which have a minimum physical dimension of less than about 6 × 10.sup. -4 inch, said stripes being composed of aluminum and at least one region within the aluminum stripe containing an intermetallic compound of hafnium and aluminum.
Claim 18
Dependent Claim
56 words
The integrated circuit structure comprising a plurality of semiconductor devices electrically connected by means of current conductive stripes which have a minimum physical dimension of less than about 6 × 10.sup. -4 inch, said stripes being composed of aluminum and at least one region within the aluminum stripe containing an intermetallic compound of hafnium and aluminum.
Claim 19
Dependent Claim
22 words
The integrated circuit structure of claim 15 wherein one said region is located near the center of the thickness of said stripe.
Claim 20
Dependent Claim
22 words
The integrated circuit structure of claim 15 wherein one said region is located near the bottom of the thickness of said stripe.
References Cited (Backward Citations)
US3725309A
Cited
US3743894A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-04-11 | 1980-10-11 | 1981-04-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-04-11 | 1984-10-11 | 1985-04-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-04-11 | 1988-10-11 | 1989-04-12 | $7700.00 | Window Closed / Lapsed |