US4166880A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solar energy device
Assignee: Solamat Inc
•
Filing: 1978-01-18
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Granted: 1979-09-04
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Expires: 1998-01-18
Abstract
Abstract Selective absorber including a layer of semiconductor applied by arc plasma spraying over a metallic surface.
Inventors
- 👤 Joseph J. Loferski
- 👤 Barton Roessler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 07:47
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/12; F; F24; F24S; F24S70/00; F24S70/20; F24S70/225; F24S70/25; Y; Y02; Y02E; Y02E10/00; Y02E10/40; Y02E10/50; Y10; Y10S; Y10S148/00; Y10S148/067; Y10S148/072; Y10S148/12; Y10S428/00; Y10S428/913; Y10T; Y10T428/00; Y10T428/31504; Y10T428/31678
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
122 words
A selective absorber panel for converting solar energy to useful heat energy which comprises a base and a layer of semiconductor overlying said base, said base being of metal and having a surface toward said semiconductor reflective of infrared, and said semiconductor being absorptive to sunlight, said semiconductor being arc plasma sprayed, said panel including a layer of transparent conducting oxide over said layer of semiconductor, said panel also including an insulating film thin enough to permit tunnelling of current carriers interposed between the semiconductor and the transparent conducting oxide layers to produce an efficient photovoltaic cell, in which panel the semiconductor is p-type silicon, the insulating film is a native oxide of silicon, and the transparent conducting oxide is indium-tin oxide.
Claim 2
Dependent Claim
122 words
A selective absorber panel for converting solar energy to useful heat energy which comprises a base and a layer of semiconductor overlying said base, said base being of metal and having a surface toward said semiconductor reflective of infrared, and said semiconductor being absorptive to sunlight, said semiconductor being arc plasma sprayed, said panel including a layer of transparent conducting oxide over said layer of semiconductor, said panel also including an insulating film thin enough to permit tunnelling of current carriers interposed between the semiconductor and the transparent conducting oxide layers to produce an efficient photovoltaic cell, in which panel the semiconductor is p-type silicon, the insulating film is a native oxide of silicon, and the transparent conducting oxide is indium-tin oxide.
Claim 3
Dependent Claim
123 words
A selective absorber panel for converting solar energy to useful heat energy which comprises a base and a layer of semiconductor overlying said base, said base being of metal and having a surface toward said semiconductor reflective of infrared, and said semiconductor being absorptive to sunlight, said semiconductor being arc plasma sprayed, said panel including a transparent conducting layer of metal over said layer of semiconductor, said panel also including an insulating film thin enough to permit tunnelling of current carriers interposed between the semiconductor and the transparent conducting metal layers to produce an efficient photovoltaic cell, in which panel the semiconductor is p-type silicon, the insulating film is a native oxide of silicon, and the transparent conducting layer of metal is aluminum.
Claim 4
Dependent Claim
123 words
A selective absorber panel for converting solar energy to useful heat energy which comprises a base and a layer of semiconductor overlying said base, said base being of metal and having a surface toward said semiconductor reflective of infrared, and said semiconductor being absorptive to sunlight, said semiconductor being arc plasma sprayed, said panel including a transparent conducting layer of metal over said layer of semiconductor, said panel also including an insulating film thin enough to permit tunnelling of current carriers interposed between the semiconductor and the transparent conducting metal layers to produce an efficient photovoltaic cell, in which panel the semiconductor is p-type silicon, the insulating film is a native oxide of silicon, and the transparent conducting layer of metal is aluminum.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-09-03 | 1983-03-05 | 1983-09-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-09-03 | 1987-03-05 | 1987-09-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-09-03 | 1991-03-05 | 1991-09-04 | $7700.00 | Window Closed / Lapsed |