US5617290A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Barium strontium titanate (BST) thin films using boron
Assignee: Texas Instruments Inc
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Filing: 1995-06-07
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Granted: 1997-04-01
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Expires: 2015-06-07
Abstract
Abstract A semiconductor device and process for making the same are disclosed which incorporate boron, which has been found to be substantially insoluble in BST, into a BST dielectric film 24. Dielectric film 24 is preferably disposed between electrodes 18 and 26 (which preferably have a Pt layer contacting the BST) to form a capacitive structure with a relatively high dielectric constant and relatively low leakage current. Boron included in a BST precursor may be used to form boron oxide in a second phase 30, which is distributed in boundary regions between BST crystals 28 in film 24. It is believed that the inclusion of boron allows for BST grains of a desired size to be formed at lower temperature, and also reduces the leakage current of the capacitive structure.
Inventors
- 👤 Bernard M. Kulwicki
- 👤 Robert Tsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 17:01
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; Y; Y10; Y10T; Y10T29/00; Y10T29/43
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
120 words
A capacitive structure on a microelectronic device, said capacitive structure comprising: (a) first and second conductive electrodes; (b) a dielectric laminate dispersed between said first and second electrodes, said dielectric laminate comprising two or mote grains having a perovskite crystal structure, each grain comprising titanium, oxygen, and at least one of barium and strontium, said grains having a median size of between 10 nm and 50 nm; and (c) said dielectric laminate further comprising B 2 O 3 in boundary regions between said grains in at least a sublayer of said dielectric laminate, said sublayer having a ratio of boron to titanium of between 0.001 and 0.1, whereby said B 2 O 3 reduces leakage current through said dielectric laminate.
Claim 2
Dependent Claim
120 words
A capacitive structure on a microelectronic device, said capacitive structure comprising: (a) first and second conductive electrodes; (b) a dielectric laminate dispersed between said first and second electrodes, said dielectric laminate comprising two or mote grains having a perovskite crystal structure, each grain comprising titanium, oxygen, and at least one of barium and strontium, said grains having a median size of between 10 nm and 50 nm; and (c) said dielectric laminate further comprising B 2 O 3 in boundary regions between said grains in at least a sublayer of said dielectric laminate, said sublayer having a ratio of boron to titanium of between 0.001 and 0.1, whereby said B 2 O 3 reduces leakage current through said dielectric laminate.
Claim 3
Dependent Claim
34 words
The structure of claim 1, wherein said grains further comprise dopant material replacing at least 200 ppm of at least one of said barium, said strontium, and said titanium in said perovskite crystal structure.
Claim 4
Dependent Claim
47 words
The structure of claim 1, further comprising oxidized titanium in said boundary regions between said grains in at least a portion of said dielectric laminate, said titanium in said oxidized titanium comprising between 0.1% and 7% of the total amount of titanium contained in said dielectric laminate.
Claim 5
Dependent Claim
35 words
The structure of claim 1, wherein said grains are arranged roughly in two or more sublayers between said first and second electrodes, said sublayers which are adjacent having different relative concentrations of barium to strontium.
Claim 6
Dependent Claim
41 words
The structure of claim 1, wherein said grains are arranged roughly in at least two sublayers between said first and second electrodes, and wherein at least two of said sublayers which are adjacent have different relative concentrations of boron to titanium.
Claim 7
Dependent Claim
17 words
The structure of claim 5, wherein at least one of said sublayers comprises essentially no boron oxide.
References Cited (Backward Citations)
US4988650A
Cited
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