US5552337A
Expired / Lapsed
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Method for manfacturing a capacitor for a semiconductor memory device having a tautalum oxide film
Assignee: Samsung Electronics Co Ltd
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Filing: 1994-09-09
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Granted: 1996-09-03
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Expires: 2014-09-09
Abstract
Abstract A capacitor for a semiconductor memory device employs a tantalum pentoxide film as a dielectric film. The dielectric film is made from tantalum pentoxide film doped with silicon over a first electrode. A second electrode is then formed over the dielectric film. Accordingly, in the method for manufacturing the device, although the dielectric constant of the dielectric film is somewhat lower than the conventional pure tantalum pentoxide film due to the silicon doped within the tantalum pentoxide film, leakage current is reduced and breakdown voltage is increased. Therefore, the dielectric film according to the present invention exhibits excellent electrical characteristics and high reliability.
Inventors
- 👤 Kee-won Kwon
- 👤 Chang-seok Kang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 08:40
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
89 words
A method for manufacturing a capacitor for a semiconductor memory comprising the steps of: depositing a first conductive layer doped with silicon on a semiconductor substrate; depositing a porous tantalum pentoxide film on said first conductive layer using a low pressure chemical vapor deposition process; heating said porous tantalum pentoxide film on said first conductive layer to cause a diffusion of silicon atoms from said first conductive layer doped with silicon into said porous tantalum pentoxide film; and forming a second conductive layer on said porous tantalum pentoxide film.
Claim 2
Independent Claim
89 words
A method for manufacturing a capacitor for a semiconductor memory comprising the steps of: depositing a first conductive layer doped with silicon on a semiconductor substrate; depositing a porous tantalum pentoxide film on said first conductive layer using a low pressure chemical vapor deposition process; heating said porous tantalum pentoxide film on said first conductive layer to cause a diffusion of silicon atoms from said first conductive layer doped with silicon into said porous tantalum pentoxide film; and forming a second conductive layer on said porous tantalum pentoxide film.
Claim 3
Dependent Claim
57 words
The method for manufacturing a capacitor for a semiconductor memory device according to claim 1, wherein; said step of depositing said porous tantalum pentoxide film includes use of tantalum penta-ethoxide as a tantalum raw material and oxygen as a reaction gas; and said low pressure chemical vapor deposition process is performed at a temperature below 410° C.
Claim 4
Dependent Claim
53 words
The method for manufacturing a capacitor for a semiconductor memory device according to claim 1, wherein said step of heating said porous tantalum pentoxide film is performed at a temperature between 650°-1,000° C. and a pressure between 100-1,000 mTorr in one of an oxygen atmosphere, a nitrogen atmosphere, and a combination oxygen-nitrogen atmosphere.
Claim 5
Dependent Claim
66 words
The method for manufacturing a capacitor for a semiconductor memory device according to claim 1, wherein said step of heating said porous tantalum pentoxide film causes diffusion of silicon atoms into said porous tantalum pentoxide film such that an amount of said silicon atoms within said tantalum pentoxide film is 3-30 wt. % of a whole amount of tantalum atoms in said porous tantalum pentoxide film.
Claim 6
Dependent Claim
45 words
The method for manufacturing a capacitor for a semiconductor memory device according to claim 1, further comprising a step of simultaneously depositing a silicon raw material together with a tantalum raw material used in depositing said porous tantalum pentoxide film on said first conductive layer.
Claim 7
Independent Claim
63 words
A method for manufacturing a capacitor for a semiconductor memory device comprising steps of: forming a first electrode on a semiconductor substrate; simultaneously depositing on said first electrode TEOS used as a silicon raw material together with tantalum penta-ethoxide used as a tantalum raw material to form a dielectric tantalum pentoxide film; and forming a second electrode on said dielectric tantalum pentoxide film.
Claim 8
Independent Claim
63 words
A method for manufacturing a capacitor for a semiconductor memory device comprising steps of: forming a first electrode on a semiconductor substrate; simultaneously depositing on said first electrode TEOS used as a silicon raw material together with tantalum penta-ethoxide used as a tantalum raw material to form a dielectric tantalum pentoxide film; and forming a second electrode on said dielectric tantalum pentoxide film.
Claim 9
Dependent Claim
58 words
The method for manufacturing a capacitor for a semiconductor memory device according to claim 1, wherein said step of depositing said first conductive layer doped with silicon includes steps of: depositing alternate layers of tantalum pentoxide and silicon oxide; and then performing an interactive diffusion with respect to said layers of tantalum pentoxide and silicon oxide by heat-treatment.
Claim 10
Independent Claim
91 words
A method for manufacturing a capacitor for a semiconductor memory device comprising steps of: forming a first electrode on a semiconductor substrate by steps of: depositing alternate films of tantalum pentoxide and silicon oxide using TEOS as a raw material for silicon and using tantalum penta-ethoxide as a raw material for tantalum, and then performing an interactive diffusion with respect to said films of tantalum pentoxide and silicon oxide by heat-treatment; depositing a tantalum pentoxide film, to thereby form a dielectric film; and forming a second electrode on said dielectric film.
Claim 11
Independent Claim
91 words
A method for manufacturing a capacitor for a semiconductor memory device comprising steps of: forming a first electrode on a semiconductor substrate by steps of: depositing alternate films of tantalum pentoxide and silicon oxide using TEOS as a raw material for silicon and using tantalum penta-ethoxide as a raw material for tantalum, and then performing an interactive diffusion with respect to said films of tantalum pentoxide and silicon oxide by heat-treatment; depositing a tantalum pentoxide film, to thereby form a dielectric film; and forming a second electrode on said dielectric film.
Claim 12
Dependent Claim
52 words
The method for manufacturing a capacitor for a semiconductor memory device according to claim 7, wherein said heat-treatment is performed by one or more high-temperature process from among; heat-treatment in an oxygen atmosphere, heat-treatment in a nitrogen atmosphere, and heat-treatment in a 100-1,000 mTorr vacuum atmosphere, at a temperature of 650°-1,000° C.
Claim 13
Dependent Claim
54 words
The method for manufacturing a capacitor for a semiconductor memory device according to claim 7, wherein a one-time deposition thickness of said layer of silicon oxide is substantially less than 20 Å and greater than 0 Å in order to diffuse silicon atoms within said layer of silicon oxide into said tantalum pentoxide film.
References Cited (Backward Citations)
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