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US4589056A Expired / Lapsed US ⏱️ 0.0 years remaining

Tantalum silicide capacitor

Assignee: National Semiconductor Corp
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Filing: 1984-10-15
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Granted: 1986-05-13
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Expires: 2004-10-15
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Abstract

Abstract A high capacitance/low leakage capacitor for use in a dynamic RAM cell fabricated from a metal silicide or metal silicide/poly capacitor plate structure, with formation of an anodic metal/silicon/oxygen insulating film over that structure.

Inventors

  • 👤 James B. Stimmell

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 15:51
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/002; H01G4/005; H01G4/008; H01G4/018; H01G4/06; H01G4/08; H01G4/10; H10; H10D; H10D1/00; H10D1/60; H10D1/68; Y; Y10; Y10T; Y10T29/00; Y10T29/43; Y10T29/435

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 60 words
A capacitor for an integrated circuit comprising: a first electrically conductive layer composed of a silicide bearing material; a dielectric layer disposed over said first electrically conductive layer, said dielectric layer including oxides of said silicide components whereby said dielectric layer comprises a compound of metal, silicon and oxygen; and a second electrically conductive layer disposed over said dielectric layer.
Claim 2
Dependent Claim 60 words
A capacitor for an integrated circuit comprising: a first electrically conductive layer composed of a silicide bearing material; a dielectric layer disposed over said first electrically conductive layer, said dielectric layer including oxides of said silicide components whereby said dielectric layer comprises a compound of metal, silicon and oxygen; and a second electrically conductive layer disposed over said dielectric layer.
Claim 3
Dependent Claim 19 words
The capacitor of claim 1 wherein said dielectric layer comprises an oxidized portion of said first electrically conductive region.
Claim 4
Dependent Claim 20 words
The capacitor of claim 2 wherein said first electrically conductive region is composed of the silicide of an anodizable metal.
Claim 5
Dependent Claim 30 words
The capacitor of claim 3 wherein said first electrically conductive region is composed of the silicide of one of the group of valve metals including tantalum, niobium, zirconium, or titanium.
Claim 6
Dependent Claim 14 words
The capacitor of claim 1 wherein said first electrically conductive region comprises tantalum silicide.
Claim 7
Dependent Claim 20 words
The capacitor of claim 1 wherein said second electrically conductive layer comprises one of polycrystalline silicon, aluminum or a silicide.
Claim 8
Dependent Claim 24 words
The capacitor of claim 6 wherein said second electrically conductive layer comprises polycrystalline silicon and is doped with an impurity to increase electrical conductivity.

References Cited (Backward Citations)

US3614548A Cited
US3869652A Cited
US4506434A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-05-12 1989-11-11 1990-05-13 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-05-12 1993-11-11 1994-05-13 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-05-12 1997-11-11 1998-05-13 $7700.00 Window Closed / Lapsed

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