US4506434A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for production of semiconductor devices
Assignee: Fujitsu Ltd
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Filing: 1982-09-03
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Granted: 1985-03-26
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Expires: 2002-09-03
Abstract
Abstract A method for producing semiconductor devices having a substrate, element fabrication areas formed in the substrate and isolation areas surrounding the element fabrication areas. The method comprises forming a thermal strain absorbing layer on the top surface of the element fabrication areas, forming at least one groove in an area which is to become the isolation areas, inlaying an insulator in the at least one groove, and annealing the insulator to make the density thereof uniform.
Inventors
- 👤 Tetsuya Ogawa
- 👤 Nobuo Toyokura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 16:07
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10P; H10P95/00; H10P95/90; H10P95/904; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17; H10W20/00; H10W20/01; H10W20/021; H10W20/071; H10W20/074
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
129 words
A method for producing a semiconductor device having a substrate, element fabrication areas formed in said substrate and dielectric isolation areas surrounding said element fabrication areas, said method comprising: (a) forming a thermal strain absorbing layer on the top surface of said element fabrication areas, wherein the material of said thermal strain absorbing layer is a material selected from the group consisting of polycrystalline silicon, molybdenum silicide, tungsten silicide, titanium silicide and tantalum silicide; (b) forming at least one groove in an area which is to become said isolation areas; (c) forming by deposition a dielectric insulator on said thermal strain absorbing layer and in said groove; and (d) annealing said insulator to make the density thereof uniform while said thermal strain absorbing layer remains on said top surface.
Claim 2
Independent Claim
129 words
A method for producing a semiconductor device having a substrate, element fabrication areas formed in said substrate and dielectric isolation areas surrounding said element fabrication areas, said method comprising: (a) forming a thermal strain absorbing layer on the top surface of said element fabrication areas, wherein the material of said thermal strain absorbing layer is a material selected from the group consisting of polycrystalline silicon, molybdenum silicide, tungsten silicide, titanium silicide and tantalum silicide; (b) forming at least one groove in an area which is to become said isolation areas; (c) forming by deposition a dielectric insulator on said thermal strain absorbing layer and in said groove; and (d) annealing said insulator to make the density thereof uniform while said thermal strain absorbing layer remains on said top surface.
Claim 3
Dependent Claim
31 words
A method for production of a semiconductor device as set forth in claim 1, wherein said insulator is selected from the group consisting of silicon oxide, silicon nitride and aluminum oxide.
Claim 4
Dependent Claim
34 words
A method for production of a semiconductor device as set forth in claim 1, wherein the material of said semiconductor substrate is a material selected from the group consisting of silicon, galium-arsenic and indium-phosphorus.
Claim 5
Independent Claim
60 words
A method for production of a semiconductor device as set forth in any one of claims 1, 3 or 4, further comprising: forming a metal layer on said thermal strain absorbing layer and on said insulator, and removing a portion of said metal layer to form a patterned metal layer corresponding to electrodes and metal wires for said semiconductor device.
Claim 6
Dependent Claim
41 words
A method for production of a semiconductor device as set forth in claim 4, wherein the material of said metal layer is a material selected from the group consisting of molybdenum silicide, tungsten silicide, titanium silicide, tantalum silicide and polycrystalline silicon.
Claim 7
Dependent Claim
46 words
A method for production of a semiconductor device as set forth in claim 4, including: (a) forming drain and source regions in at least one of said element fabrication areas; and (b) forming a wiring layer having a predetermined pattern contacting said drain and source regions.
Claim 8
Dependent Claim
43 words
A method for production of a semiconductor device as set forth in claim 6, including forming a p-well in a portion of said substrate prior to forming said insulators, wherein the depth of said insulators is greater than the depth of said p-well.
Claim 9
Dependent Claim
36 words
A method for production of a semiconductor device as set forth in claim 4, including forming an n + region in at least one of said element fabrication areas prior to forming said strain absorbing layer.
Claim 10
Dependent Claim
108 words
A method for production of a semiconductor device as set forth in claim 5, including: (a) prior to forming said strain absorbing layer, forming in at least one of said element fabrication areas, an n region, an n + region and a p region, wherein said n region is between said n + and said p regions; (b) after forming said strain absorbing layer and prior to forming said at least one groove, forming an opening in said strain absorbing layer over said n region; and (c) covering said opening and at least a portion of said strain absorbing layer with a layer of polycrystalline silicon containing phosphorous.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-03-25 | 1988-09-24 | 1989-03-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-03-25 | 1992-09-24 | 1993-03-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-03-25 | 1996-09-24 | 1997-03-26 | $7700.00 | Window Closed / Lapsed |