US5279985A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method of fabrication thereof
Assignee: NEC Electronics Corp
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Filing: 1992-09-15
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Granted: 1994-01-18
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Expires: 2012-09-15
Abstract
Abstract The present invention relates to a semiconductor device and a method of fabrication of the same, said semiconductor device including a capacitive structure comprising of a lower layer electrode consisting of a silicon material, a capacitive insulating film consisting of a tantalum oxide film and an upper layer electrode, said upper layer electrode comprising at least a titanium nitride film for covering said capacitive insulating film. Said method of fabrication comprises the steps of: forming the lower layer electrode; forming the capacitive insulating film for covering said lower layer electrode; and forming the titanium nitride film for covering said capacitive insulating film.
Inventors
- 👤 Satoshi Kamiyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:13
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; Y; Y10; Y10S; Y10S148/00; Y10S148/014; Y10S148/163
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
95 words
A method of fabrication of a semiconductor device including a capacitive structure comprising a lower layer electrode consisting of a silicon material, a capacitive insulating film consisting of a tantalum oxide film and an upper layer electrode, said method comprising the steps of: forming said lower layer electrode; forming said capacitive insulating film covering said lower layer electrode; forming a first titanium nitride film covering said capacitive insulating film; forming a high melting point metal film covering said lower layer electrode; and forming a second titanium nitride film covering said high melting point metal film.
Claim 2
Independent Claim
95 words
A method of fabrication of a semiconductor device including a capacitive structure comprising a lower layer electrode consisting of a silicon material, a capacitive insulating film consisting of a tantalum oxide film and an upper layer electrode, said method comprising the steps of: forming said lower layer electrode; forming said capacitive insulating film covering said lower layer electrode; forming a first titanium nitride film covering said capacitive insulating film; forming a high melting point metal film covering said lower layer electrode; and forming a second titanium nitride film covering said high melting point metal film.
Claim 3
Dependent Claim
45 words
A method of fabrication according to claim 1, wherein said capacitive insulating film is formed after the step of forming said second titanium nitride film and said second titanium nitride film is located between said tantalum oxide film and said high melting point metal film.
Claim 4
Dependent Claim
26 words
A method of fabrication according to claim 1, wherein said tantalum oxide film is located between said lower layer electrode and said first titanium nitride film.
Claim 5
Dependent Claim
21 words
A method of fabrication according to claim 1, further comprising forming a layer of aluminum on said first titanium nitride film.
Claim 6
Dependent Claim
21 words
A method of fabrication according to claim 1, further comprising forming a layer of titanium covering said first titanium nitride film.
Claim 7
Dependent Claim
24 words
A method of fabrication according to claim 1, further comprising forming a layer of high melting point metal covering said first titanium nitride film.
Claim 8
Dependent Claim
39 words
A method of fabrication according to claim 1, wherein said high melting point film comprises a film of titanium on said lower layer electrode, said film of titanium being between said lower layer electrode and said tantalum oxide film.
Claim 9
Dependent Claim
16 words
A method of fabrication according to claim 1, wherein said lower layer electrode comprises polycrystalline silicon.
Claim 10
Dependent Claim
17 words
A method of fabrication according to claim 1, wherein said lower layer electrode comprises doped polycrystalline silicon.
Claim 11
Dependent Claim
18 words
A method of fabrication according to claim 1, wherein said lower layer electrode comprises phosphorous doped polycrystalline silicon.
Claim 12
Dependent Claim
32 words
A method of fabrication according to claim 1, further comprising steps of forming a titanium film on the first titanium nitride film and forming an aluminum metal film on the titanium film.
Claim 13
Dependent Claim
24 words
A method of fabrication according to claim 1, further comprising forming a film of high melting point metal on the first titanium nitride film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-01-17 | 1997-07-19 | 1998-01-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-01-17 | 2001-07-19 | 2002-01-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-01-17 | 2005-07-19 | 2006-01-18 | $7700.00 | Window Closed / Lapsed |