US4977102A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing layer structure of a memory cell for a dynamic random access memory device
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1989-07-07
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Granted: 1990-12-11
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Expires: 2009-07-07
Abstract
Abstract A method of producing a layer structure of a memory cell for dynamic random access memory device includes the steps of forming an insulation film on a semiconductor substrate, forming a first conductive film on the insulation film, the first conductive film being used for forming a part of a storage electrode of a memory cell capacitor, patterning the first conductive film and the insulation film so as to form a window used for forming a contact between the storage electrode and the semiconductor substrate, forming a second conductive film so as to cover the window and the first conductive film, the second conductive film being used for forming the remaining part of the storage electrode, and patterning the first conductive film and the second conductive film, patterened first and second conductive films constructing the storage electrode, forming a dielectric film so as to cover the storage electrode, and forming a third conductive film so as to cover the dielectric film, the third conductive film being an opposed electrode which is paired with the storage electrode of the memory cell capacitor.
Inventors
- 👤 Taiji Ema
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 02:20
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; H10B12/0335
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
180 words
A method of producing a layer structure of a memory cell for dynamic random access memory device comprising the steps of: forming an insulation film on a semiconductor substrate; forming a first conductive film on the insulation film, the first conductive film being used for forming a part of a storage electrode of a memory cell capacitor; patterning the first conductive film and the insulation film so as to form a window used for forming a contact between the storage electrode and the semiconductor substrate; forming a second conductive film so as to cover the window and the first conductive film, the second conductive film being used for forming the remaining part of the storage electrode; patterning the first conductive film and the second conductive film, patterned first and second conductive films constructing the storage electrode; forming a dielectric film so as to cover the storage electrode; and forming a third conductive film so as to cover the dielectric film, the third conductive film being an opposed electrode which is paired with the storage electrode of the memory cell capacitor.
Claim 2
Independent Claim
180 words
A method of producing a layer structure of a memory cell for dynamic random access memory device comprising the steps of: forming an insulation film on a semiconductor substrate; forming a first conductive film on the insulation film, the first conductive film being used for forming a part of a storage electrode of a memory cell capacitor; patterning the first conductive film and the insulation film so as to form a window used for forming a contact between the storage electrode and the semiconductor substrate; forming a second conductive film so as to cover the window and the first conductive film, the second conductive film being used for forming the remaining part of the storage electrode; patterning the first conductive film and the second conductive film, patterned first and second conductive films constructing the storage electrode; forming a dielectric film so as to cover the storage electrode; and forming a third conductive film so as to cover the dielectric film, the third conductive film being an opposed electrode which is paired with the storage electrode of the memory cell capacitor.
Claim 3
Dependent Claim
53 words
A method of producing a layer structure of a memory cell for dynamic random access memory device as claimed in claim 1, wherein in the step of patterning the first conductive film and the insulation film, a mask film used for patterning the first conductive film is used for patterning the insulation film.
Claim 4
Dependent Claim
41 words
A method of producing a layer structure of a memory cell for dynamic random access memory device as claimed in claim 1, wherein the step of patterning the first conductive film and the insulation film is carried out by anisotropic etching.
Claim 5
Dependent Claim
31 words
A method of producing a layer structure of a memory cell for dynamic random access memory device as claimed in claim 1, wherein the first and second conductive films comprise polysilicon.
Claim 6
Dependent Claim
48 words
A method of producing a layer structure of a memory cell for dynamic random access memory device as claimed in claim 1, wherein the step of forming the first conductive film is carried out so as to obtain the first conductive film thicker than the second conductive film.
Claim 7
Dependent Claim
57 words
A method of producing a layer structure of a memory cell for dynamic random access memory device as claimed in claim 1, wherein the step of patterning the first conductive film and the insulation film, a mask film different from a mask film used for patterning the first conductive film is used for forming the insulation film.
Claim 8
Dependent Claim
47 words
A method of producing a layer structure of a memory cell for dynamic random access memory device as claimed in claim 6, wherein the mask film used for patterning the first conductive film has a size which enables a portion of the insulation film to be exposed.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-12-10 | 1994-06-11 | 1994-12-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-10 | 1998-06-11 | 1998-12-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-10 | 2002-06-11 | 2002-12-11 | $7700.00 | Window Closed / Lapsed |