US6046469A
Expired / Lapsed
US
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Semiconductor storage device having a capacitor and a MOS transistor
Assignee: Sharp Corp
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Filing: 1998-09-28
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Granted: 2000-04-04
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Expires: 2018-09-28
Abstract
Abstract In a semiconductor storage device, a capacitor section is connected with a drain region of a MOS transistor by means of a polysilicon plug. The capacitor section has a lower electrode, a ferroelectric thin film, and an upper electrode stacked in this order. A TiN barrier metal is placed between the lower electrode and the plug. The lower electrode has a lower film made of a platinum-rhodium alloy and an upper film made of a platinum-rhodium alloy oxide which is in contact with the ferroelectric thin film.
Inventors
- 👤 Shinobu Yamazaki
- 👤 Kazuya Ishihara
- 👤 Masaya Nagata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 12:56
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B53/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/692; H10D1/696; H10P; H10P14/00; H10P14/40; H10P14/418
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
117 words
A semiconductor storage device, comprising: a capacitor section having a lower electrode, a dielectric film, and an upper electrode stacked in this order; a MOS transistor having a source region, a drain region, and a gate electrode; a polysilicon plug for electrically connecting the capacitor section with the drain region of the MOS transistor; and a barrier metal formed between the lower electrode of the capacitor section and the plug, wherein the barrier metal is formed of either TiN or Ta x Si 1-x N y (1>x>0.2, 1≧y>0), and wherein the lower electrode of the capacitor section has a plurality of films including a platinum-rhodium alloy oxide film which is formed in contact with the dielectric film.
Claim 2
Dependent Claim
117 words
A semiconductor storage device, comprising: a capacitor section having a lower electrode, a dielectric film, and an upper electrode stacked in this order; a MOS transistor having a source region, a drain region, and a gate electrode; a polysilicon plug for electrically connecting the capacitor section with the drain region of the MOS transistor; and a barrier metal formed between the lower electrode of the capacitor section and the plug, wherein the barrier metal is formed of either TiN or Ta x Si 1-x N y (1>x>0.2, 1≧y>0), and wherein the lower electrode of the capacitor section has a plurality of films including a platinum-rhodium alloy oxide film which is formed in contact with the dielectric film.
Claim 3
Dependent Claim
42 words
The semiconductor storage device according to claim 1, wherein the lower electrode consists of the platinum-rhodium alloy oxide film and a metal film which is formed of either a platinum-rhodium alloy or platinum and is placed under the platinum-rhodium alloy oxide film.
Claim 4
Dependent Claim
32 words
The semiconductor storage device according to claim 2, wherein the platinum-rhodium alloy oxide film has a thickness of 100-800 Å inclusive and the metal film has a thickness of 100-1000 Å inclusive.
Claim 5
Dependent Claim
23 words
The semiconductor storage device according to claim 1, wherein an oxygen content of the platinum-rhodium alloy oxide is between 2% and 30% inclusive.
Claim 6
Dependent Claim
129 words
A semiconductor storage device, comprising: a capacitor section having a lower electrode, a dielectric film, and an upper electrode stacked in this order; a MOS transistor having a first current terminal region, a second current terminal region, and a gate electrode; a polysilicon plug for electrically connecting the capacitor section with the first current terminal region of the MOS transistor; and a barrier metal formed between the lower electrode of the capacitor and the plug, wherein the barrier metal is formed of either TiN or Ta x Si 1-x N y (1>x>0.2, 1≧y>0), wherein the lower electrode of the capacitor section has a plurality of films including a platinum-rhodium oxide film which is formed in contact with the dielectric film, and wherein the dielectric film is an SBT film.
Claim 7
Dependent Claim
129 words
A semiconductor storage device, comprising: a capacitor section having a lower electrode, a dielectric film, and an upper electrode stacked in this order; a MOS transistor having a first current terminal region, a second current terminal region, and a gate electrode; a polysilicon plug for electrically connecting the capacitor section with the first current terminal region of the MOS transistor; and a barrier metal formed between the lower electrode of the capacitor and the plug, wherein the barrier metal is formed of either TiN or Ta x Si 1-x N y (1>x>0.2, 1≧y>0), wherein the lower electrode of the capacitor section has a plurality of films including a platinum-rhodium oxide film which is formed in contact with the dielectric film, and wherein the dielectric film is an SBT film.
Claim 8
Dependent Claim
41 words
The semiconductor device according to claim 5, wherein the lower electrode consists of the platinum-rhodium alloy oxide film and a metal film which is formed of either a platinum-rhodium alloy or platinum and is placed under the platinum-rhodium alloy oxide film.
Claim 9
Dependent Claim
32 words
The semiconductor storage device according to claim 5, wherein the platinum-rhodium alloy oxide film has a thickness of 100-800 Å inclusive and the metal film has a thickness of 100-1000 Å inclusive.
Claim 10
Dependent Claim
22 words
The semiconductor device according to claim 5, wherein an oxygen content of the platinum-rhodium alloy oxide is between 2% and 30% inclusive.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-04-04 | 2003-10-04 | 2004-04-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-04-04 | 2007-10-04 | 2008-04-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-04-04 | 2011-10-04 | 2012-04-04 | $7700.00 | Window Closed / Lapsed |