US5003428A
Expired / Lapsed
US
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Electrodes for ceramic oxide capacitors
Assignee: National Semiconductor Corp
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Filing: 1990-02-14
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Granted: 1991-03-26
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Expires: 2010-02-14
Abstract
Abstract Electrodes composed of ruthenium iridium, osmium, or rhodium and the electrically conductive oxides of these metals are particularly well-suited to use in electrical ceramic oxide devices because of the low resistivity of the oxides and the stability of the oxides under the processing conditions necessary to optimize performance of electrical ceramic oxide materials. Such electrodes may be used with ceramic oxide capacitors, including ceramic oxide capacitors found in microelectronic devices.
Inventors
- 👤 William H. Shepherd
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:24
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/002; H01G4/005; H01G4/008; H10; H10D; H10D86/00; H10D86/80; H10D86/85; H10N; H10N30/00; H10N30/01; H10N30/06; H10N60/00; H10N60/01; H10N60/0268; H10N60/0744; Y; Y10; Y10T; Y10T29/00; Y10T29/43; Y10T29/435
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
48 words
An electrical ceramic oxide capacitor comprising: a first electrode including a first body of material selected from the group consisting of ruthenium oxide, iridium oxide, osmium oxide, and rhodium oxide; a second electrode; and an electrical ceramic oxide dielectric material disposed between said first and said second electrodes.
Claim 2
Dependent Claim
48 words
An electrical ceramic oxide capacitor comprising: a first electrode including a first body of material selected from the group consisting of ruthenium oxide, iridium oxide, osmium oxide, and rhodium oxide; a second electrode; and an electrical ceramic oxide dielectric material disposed between said first and said second electrodes.
Claim 3
Dependent Claim
52 words
An electrical ceramic oxide capacitor as claimed in claim 1 wherein said first electrode further includes a second body of material selected from the group consisting of ruthenium, iridium, osmium, and rhodium, said first body disposed between and in electrical contact with said electrical ceramic oxide dielectric material and said second body.
Claim 4
Dependent Claim
35 words
The capacitor of claim 2 where said second body is a single metal selected from the group consisting of ruthenium, iridium, osmium, and rhodium, and said first body is the oxide of said second body.
Claim 5
Dependent Claim
35 words
An electrical ceramic oxide capacitor as claimed in claim 1, wherein said second electrode includes a first body of material selected from the group consisting of ruthenium oxide, iridium oxide, osmium oxide, and rhodium oxide.
Claim 6
Dependent Claim
55 words
An electrical ceramic oxide capacitor as claimed in claim 4, wherein said first and second electrodes each further includes a second body of material selected from the group consisting of ruthenium, iridium, osmium, and rhodium, said first body disposed between and in electrical contact with said electrical ceramic oxide dielectric material and said second body.
Claim 7
Dependent Claim
16 words
The capacitor of claim 1 where said first body abuts said electrical ceramic oxide dielectric material.
Claim 8
Dependent Claim
81 words
A microelectronic device including an electrical ceramic oxide capacitor comprising: a first electrode, said first electrode including a first body of material selected from the group consisting of ruthenium oxide, iridium oxide, osmium oxide, and rhodium oxide; a second electrode; an electrical ceramic oxide dielectric material disposed between and in electrical contact with said first and said second electrodes, thereby forming a capacitor; and a semiconductor substrate supporting said first electrode, said second electrode, and said electrical ceramic oxide dielectric material.
Claim 9
Dependent Claim
81 words
A microelectronic device including an electrical ceramic oxide capacitor comprising: a first electrode, said first electrode including a first body of material selected from the group consisting of ruthenium oxide, iridium oxide, osmium oxide, and rhodium oxide; a second electrode; an electrical ceramic oxide dielectric material disposed between and in electrical contact with said first and said second electrodes, thereby forming a capacitor; and a semiconductor substrate supporting said first electrode, said second electrode, and said electrical ceramic oxide dielectric material.
Claim 10
Dependent Claim
47 words
The device of claim 7, wherein said first electrode further includes a second body of material selected from the group consisting of ruthenium, iridium, osmium, and rhodium, said first body disposed between and in electrical contact with said electrical ceramic oxide dielectric material and said second body.
Claim 11
Dependent Claim
35 words
The device of claim 8 where said second body is a single metal selected from the group consisting of ruthenium, iridium, osmium, and rhodium, and said first body is the oxide of said second body.
Claim 12
Dependent Claim
30 words
The device of claim 7, wherein said second electrode includes a first body of material selected from the group consisting of ruthenium oxide, iridium oxide, osmium oxide, and rhodium oxide.
Claim 13
Dependent Claim
50 words
The device of claim 10, wherein said first and second electrodes each further includes a second body of material selected from the group consisting of ruthenium, iridium, osmium, and rhodium, said first body disposed between and in electrical contact with said electrical ceramic oxide dielectric material and said second body.
Claim 14
Dependent Claim
16 words
The device of claim 7 where said first body abuts said electrical ceramic oxide dielectric material.
Claim 15
Independent Claim
98 words
A method for forming a microelectronic device having an electrical ceramic oxide capacitor, comprising: (a) providing a semiconductor substrate for support; (b) forming a first electrode supported upon said substrate, said electrode including a first body of material selected from the group consisting of ruthenium, iridium, osmium, rhodium, ruthenium oxide, iridium oxide, osmium oxide, and rhodium oxide; (c) forming a second electrode supported upon said substrate; and (d) forming a dielectric body of electrical ceramic oxide dielectric material supported upon said substrate, said dielectric body disposed between and in electrical contact with said first and said second electrodes.
Claim 16
Independent Claim
98 words
A method for forming a microelectronic device having an electrical ceramic oxide capacitor, comprising: (a) providing a semiconductor substrate for support; (b) forming a first electrode supported upon said substrate, said electrode including a first body of material selected from the group consisting of ruthenium, iridium, osmium, rhodium, ruthenium oxide, iridium oxide, osmium oxide, and rhodium oxide; (c) forming a second electrode supported upon said substrate; and (d) forming a dielectric body of electrical ceramic oxide dielectric material supported upon said substrate, said dielectric body disposed between and in electrical contact with said first and said second electrodes.
Claim 17
Dependent Claim
64 words
The method of claim 13, wherein said first body of material is selected from the group consisting of ruthenium oxide, iridium oxide, osmium oxide, and rhodium oxide, and said first electrode further including a second body of material selected from the group consisting of ruthenium, iridium, osmium, and rhodium, said second body disposed between said first body and said electrical ceramic oxide dielectric material.
Claim 18
Dependent Claim
35 words
The method of claim 14, wherein said second body is a single metal selected from the group consisting of ruthenium, iridium, osmium, and rhodium, and said first body is the oxide of said second body.
Claim 19
Dependent Claim
20 words
The method of claim 14, wherein said first body abuts said electrical ceramic oxide dielectric material and said second body.
Claim 20
Dependent Claim
35 words
The method of claim 16, wherein said second body is a single metal selected from the group consisting of ruthenium, iridium, osmium, and rhodium, and said first body is the oxide of said second body.
Claim 21
Dependent Claim
50 words
The method of claim 14, wherein said second body is formed by deposition of material selected from the group consisting of ruthenium, iridium, osmium, and rhodium, and said first body is formed by reactive deposition with oxygen of material selected from the group consisting of ruthenium, iridium, osmium, and rhodium.
Claim 22
Dependent Claim
48 words
The method of claim 18, wherein the deposition of the second body and reactive deposition of the first body are completed in a single process step, by preventing oxidation during the deposition of the second body and by promoting oxidation during the reactive deposition of the first body.
Claim 23
Dependent Claim
50 words
The method of claim 14, wherein said second body is formed by sputtering of material selected from the group consisting of ruthenium, iridium, osmium, and rhodium, and said first body is formed by reactive sputtering with oxygen of material selected from the group consisting of ruthenium, iridium, osmium, and rhodium.
Claim 24
Dependent Claim
56 words
The method of claim 20, wherein the sputtering of material for the second body and reactive sputtering of material for the first body are completed in a single process step, by preventing oxidation during the sputtering of material for the second body and by promoting oxidation during the reactive sputtering of material for the first body.
Claim 25
Dependent Claim
18 words
The method of claim 14, wherein said first body is formed by partial oxidation of said second body.
Claim 26
Dependent Claim
18 words
The method of claim 14, wherein said second body is formed by partial reduction of said first body.
Claim 27
Dependent Claim
16 words
The method of claim 13, wherein said first body abuts said electrical ceramic oxide dielectric material.
References Cited (Backward Citations)
US4017820A
Cited
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