US5790366A
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High temperature electrode-barriers for ferroelectric and other capacitor structures
Assignee: Sharp Corp
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Filing: 1996-12-06
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Granted: 1998-08-04
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Expires: 2016-12-06
Abstract
Abstract A capacitor for use on silicon or other substrate has a multilayer electrode structure. In a preferred embodiment, a bottom electrode situated on the substrate has a bottom layer of Pt--Rh--O x , an intermediate layer of Pt--Rh, and a top layer of Pt--Rh--O x . A ferroelectric material such as PZT (or other material) is situated on the bottom electrode. A top electrode, preferably of identical composition as the bottom electrode, is situated on the opposite side of the ferroelectric from the bottom electrode.
Inventors
- 👤 Seshu B. Desu
- 👤 Hemanshu D. Bhatt
- 👤 Dilip P. Vijay
- 👤 Yoosang Hwang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 12:53
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696; H10B; H10B12/00; H10B12/30; H10B53/00; H10D1/682
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
62 words
A capacitor comprising: a bottom electrode formed on a substrate, a top electrode, and a dielectric sandwiched between the bottom and top electrodes; the bottom electrode comprising a layer of metal oxide and a layer of metal on the metal oxide, the metal oxide being formed on said substrate, and the metal the same type of metal as in the metal layer.
Claim 2
Dependent Claim
62 words
A capacitor comprising: a bottom electrode formed on a substrate, a top electrode, and a dielectric sandwiched between the bottom and top electrodes; the bottom electrode comprising a layer of metal oxide and a layer of metal on the metal oxide, the metal oxide being formed on said substrate, and the metal the same type of metal as in the metal layer.
Claim 3
Dependent Claim
25 words
The capacitor of claim 1, wherein the metal is selected from the group consisting of Pt, Ir, Rh, Ru, Ag, and alloys of the same.
Claim 4
Dependent Claim
20 words
The capacitor of claim 1, further comprising a second metal oxide layer sandwiched between said metal layer and said dielectric.
Claim 5
Dependent Claim
10 words
The capacitor of claim 3, wherein the dielectric includes PZT.
Claim 6
Dependent Claim
24 words
The capacitor of claim 1, wherein the top electrode comprises a metal layer and metal oxide layer formed above the top electrode metal layer.
Claim 7
Dependent Claim
53 words
A capacitor comprising: a bottom electrode formed on a substrate, a top electrode, and a dielectric sandwiched between the bottom and top electrodes; the bottom electrode comprising a first layer of Pt--Rh--O x a second layer of Pt--Rh, and a third layer of Pt--Rh--O x , the third layer being adjacent the dielectric.
Claim 8
Dependent Claim
53 words
A capacitor comprising: a bottom electrode formed on a substrate, a top electrode, and a dielectric sandwiched between the bottom and top electrodes; the bottom electrode comprising a first layer of Pt--Rh--O x a second layer of Pt--Rh, and a third layer of Pt--Rh--O x , the third layer being adjacent the dielectric.
Claim 9
Dependent Claim
11 words
The capacitor of claim 6, wherein the dielectric is a ferroelectric.
Claim 10
Dependent Claim
38 words
The capacitor of claim 7, wherein the top electrode comprises a first layer of Pt--Rh--O x , a second layer of Pt--Rh, and a third layer of Pt--Rh--O x , the first layer being adjacent to the dielectric.
Claim 11
Dependent Claim
43 words
The capacitor of claim 6, wherein the bottom electrode first layer has a thickness of about 15 nm, the bottom electrode second layer has a thickness of about 50 nm, and the bottom electrode third layer has a thickness of about 30 nm.
Claim 12
Dependent Claim
14 words
The capacitor of claim 6, wherein the bottom electrode first layer is about Pt--13%Rh.
Claim 13
Dependent Claim
44 words
The capacitor of claim 6, wherein the bottom electrode first layer has an atomic composition of Pt:Rh:O of 66:14:20; the second layer has an atomic composition of Pt:Rh of about 87:13; and the third layer has an atomic composition of Pt:Rh:O of about 50:20:30.
Claim 14
Dependent Claim
19 words
The capacitor of claim 6, wherein the substrate comprises at least one of silicon, germanium, GaAs, or another semiconductor.
Claim 15
Dependent Claim
27 words
The capacitor of claim 12, wherein the substrate is selected from the group consisting of n + Si(100), n + polysilicon/SiO 2 /Si, and SiO 2 /Si.
Claim 16
Dependent Claim
95 words
A DRAM, comprising: a capacitor having a bottom electrode formed on a substrate, a top electrode, and a dielectric sandwiched between the bottom and top electrodes; the bottom electrode comprising a layer of metal oxide and a layer of metal on the metal oxide, the metal oxide being formed on said substrate, and the metal oxide including the same type of metal as in the metal layer; wherein the dielectric is selected from the group consisting of Sr 1-x Ba x TiO 3 , BaBi 2 Ta 2 O 9 , and high dielectric materials.
Claim 17
Dependent Claim
95 words
A DRAM, comprising: a capacitor having a bottom electrode formed on a substrate, a top electrode, and a dielectric sandwiched between the bottom and top electrodes; the bottom electrode comprising a layer of metal oxide and a layer of metal on the metal oxide, the metal oxide being formed on said substrate, and the metal oxide including the same type of metal as in the metal layer; wherein the dielectric is selected from the group consisting of Sr 1-x Ba x TiO 3 , BaBi 2 Ta 2 O 9 , and high dielectric materials.
References Cited (Backward Citations)
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