US5185689A
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Capacitor having a ruthenate electrode and method of formation
Assignee: NXP USA Inc
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Filing: 1992-04-29
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Granted: 1993-02-09
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Expires: 2012-04-29
Abstract
Abstract A capacitor (11) is formed overlying a dielectric layer (34). A conductive layer (36) is formed overlying the dielectric layer (34). An optional barrier layer (16) is formed to electrically connect and isolate the conductive layer (36) from a first electrode region (20) which has a ruthenate portion. A dielectric layer (22) is formed overlying the first ruthenate electrode region (20) to form a capacitor dielectric. A second electrode region (24) is formed overlying the dielectric layer (22). An optional barrier layer (28) is formed overlying the electrode region (24). A conductive layer (32) is formed overlying the optional barrier layer (28) and makes electric contact to the electrode region (24). A dielectric layer (30) is formed to electrically isolate the capacitor (11).
Inventors
- 👤 Papu D. Maniar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 14:29
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696; H10D1/682; Y; Y10; Y10T; Y10T29/00; Y10T29/43; Y10T29/435
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
49 words
A capacitor comprising: a first electrode having a first portion formed of a material selected from a group consisting of: calcium ruthenate, strontium ruthenate, barium ruthenate, thallium ruthenate, bismuth ruthenate, and lead ruthenate; a second electrode; and a dielectric material formed between the first electrode and the second electrode.
Claim 2
Dependent Claim
49 words
A capacitor comprising: a first electrode having a first portion formed of a material selected from a group consisting of: calcium ruthenate, strontium ruthenate, barium ruthenate, thallium ruthenate, bismuth ruthenate, and lead ruthenate; a second electrode; and a dielectric material formed between the first electrode and the second electrode.
Claim 3
Dependent Claim
50 words
The capacitor of claim 1 wherein the dielectric material is selected from a group consisting of: lead zirconium titanate, tantalum pentoxide, silicon dioxide, oxide-nitride-oxide (ONO), titanium silicate, barium titanate, calcium titanate, bismuth titanate, strontium titanate, silicon nitride, lead zirconate, lead lanthanum zirconium titanate, titanium oxide, zirconium oxide, and lead titanate.
Claim 4
Dependent Claim
67 words
The capacitor of claim 1 wherein the first electrode further comprises: a second portion of the second electrode formed of ruthenium oxide wherein either the first portion of the first electrode is formed between the second portion of the first electrode and the dielectric material or the second portion of the first electrode is formed between the first portion of the first electrode and the dielectric material.
Claim 5
Dependent Claim
20 words
The capacitor of claim 1 wherein the second electrode is formed having a first portion which is a ruthenate material.
Claim 6
Dependent Claim
67 words
The capacitor of claim 4 wherein the second electrode further comprises: a second portion of the first electrode formed of ruthenium oxide wherein either the first portion of the second electrode is formed between the second portion of the second electrode and the dielectric material or the second portion of the second electrode is formed between the first portion of the second electrode and the dielectric material.
Claim 7
Dependent Claim
33 words
The capacitor of claim 1 wherein the capacitor is connected to a current electrode of a transistor to form one of either a dynamic random access memory cell or a non-volatile memory cell.
Claim 8
Dependent Claim
53 words
The capacitor of claim 1 further comprising: an electrical contact conductive region; and a barrier layer formed adjacent a predetermined one of either the first electrode or the second electrode, the barrier layer electrically contacting the predetermined one of either the first electrode or the second electrode to the electrical contact conductive region.
Claim 9
Independent Claim
58 words
A method for forming a capacitor comprising the steps of: forming a first electrode having a first portion made of a material selected from a group consisting of: calcium ruthenate, strontium ruthenate, barium ruthenate, thallium ruthenate, bismuth ruthenate, and lead ruthenate; forming a second electrode; and forming a dielectric material between the first electrode and the second electrode.
Claim 10
Independent Claim
58 words
A method for forming a capacitor comprising the steps of: forming a first electrode having a first portion made of a material selected from a group consisting of: calcium ruthenate, strontium ruthenate, barium ruthenate, thallium ruthenate, bismuth ruthenate, and lead ruthenate; forming a second electrode; and forming a dielectric material between the first electrode and the second electrode.
Claim 11
Dependent Claim
27 words
The method of claim 8 wherein the step of forming the first electrode further comprises: sputtering the ruthenate material to form a portion of the first electrode.
Claim 12
Dependent Claim
70 words
The method of claim 8 wherein the step of forming the first electrode further comprises: depositing a ruthenium oxide layer; depositing a metallic oxide adjacent the ruthenate oxide layer, the ruthenium oxide layer contacting the metallic oxide layer at an interface; and heating the ruthenium oxide layer and the metallic oxide layer to form said ruthenate material at the interface of the ruthenium oxide layer and the metallic oxide layer.
Claim 13
Dependent Claim
35 words
The method of claim 10 wherein the metallic oxide layer is a material selected from a group consisting of: strontium oxide, calcium oxide, barium oxide, thallium oxide, bismuth oxide, lead oxide, and lead zirconium titanate.
Claim 14
Dependent Claim
79 words
The method of claim 9 wherein the step of forming the first electrode further comprises: using a metallic oxide spin on glass to create a metallic oxide layer; forming a ruthenium oxide layer adjacent the metallic oxide layer, the ruthenium oxide layer contacting the metallic oxide layer at an interface; and heating the ruthenium oxide layer and the metallic oxide layer to form said ruthenate material at the interface of the ruthenium oxide layer and the metallic oxide layer.
Claim 15
Dependent Claim
35 words
The method of claim 12 wherein the metallic oxide layer is a material selected from a group consisting of: strontium oxide, calcium oxide, barium oxide, thallium oxide, bismuth oxide, lead oxide, and lead zirconium titanate.
Claim 16
Dependent Claim
31 words
The method of claim 8 wherein the step of forming the first electrode further comprises: depositing simultaneously a metallic oxide layer and a ruthenium oxide layer to form said ruthenate material.
Claim 17
Dependent Claim
54 words
The method of claim 8 wherein the dielectric material is formed by a material selected from a group consisting of: lead zirconium titanate, tantalum pentoxide, silicon dioxide, oxide-nitride-oxide (ONO), titanium silicate, barium titanate, calcium titanate, bismuth titanate, strontium titanate, silicon nitride, lead zirconate, lead lanthanum zirconium titanate, titanium oxide, zirconium oxide, and lead titanate.
Claim 18
Dependent Claim
71 words
The method of claim 8 wherein the step of forming the first electrode further comprises: forming a second portion of the first electrode of ruthenium oxide wherein either the first portion of the first electrode is formed between the second portion of the first electrode and the dielectric material or the second portion of the first electrode is formed between the first portion of the first electrode and the dielectric material.
Claim 19
Dependent Claim
20 words
The method of claim 8 wherein the second electrode is formed having a first portion which is a ruthenate material.
Claim 20
Dependent Claim
71 words
The method of claim 17 wherein the step of forming the second electrode further comprises: forming a second portion of the second electrode of ruthenium oxide wherein either the first portion of the second electrode is formed between the second portion of the second electrode and the dielectric material or the second portion of the second electrode is formed between the first portion of the second electrode and the dielectric material.
Claim 21
Dependent Claim
106 words
The method of claim 8 wherein the step of forming the first electrode further comprises: forming a ruthenium metal layer; forming one of either a metallic layer or a metallic oxide layer adjacent the ruthenium metal layer, the one of either a metallic layer or a metallic oxide layer contacting the ruthenium metal layer at an interface; and heating the ruthenium metal layer and the one of either a metallic layer or a metallic oxide layer in an oxidizing ambient to form said ruthenate material at the interface of the ruthenium metal layer and the one of either a metallic layer or a metallic oxide layer.
Claim 22
Dependent Claim
57 words
The method of claim 8 further comprising the steps of: forming an electrical contact conductive region; and forming a barrier layer adjacent a predetermined one of either the first electrode or the second electrode, the barrier layer electrically contacting the predetermined one of either the first electrode or the second electrode to the electrical contact conductive region.
Claim 23
Dependent Claim
95 words
A capacitor comprising: a first electrode having a portion formed of a ruthenate material selected from a group consisting of: calcium ruthenate, strontium ruthenate, barium ruthenate, thallium ruthenate, bismuth ruthenate, and lead ruthenate; a second electrode; and a dielectric material formed between the first electrode and the second electrode and being made of a material selected from a group consisting of: lead zirconium titanate, titanium silicate, barium titanate, calcium titanate, bismuth titanate, strontium titanate, silicon nitride, lead zirconate, lead lanthanum zirconium titanate, oxide-nitride-oxide (ONO), silicon dioxide, tantalum pentoxide, titanium oxide, zirconium oxide, and lead titanate.
Claim 24
Dependent Claim
95 words
A capacitor comprising: a first electrode having a portion formed of a ruthenate material selected from a group consisting of: calcium ruthenate, strontium ruthenate, barium ruthenate, thallium ruthenate, bismuth ruthenate, and lead ruthenate; a second electrode; and a dielectric material formed between the first electrode and the second electrode and being made of a material selected from a group consisting of: lead zirconium titanate, titanium silicate, barium titanate, calcium titanate, bismuth titanate, strontium titanate, silicon nitride, lead zirconate, lead lanthanum zirconium titanate, oxide-nitride-oxide (ONO), silicon dioxide, tantalum pentoxide, titanium oxide, zirconium oxide, and lead titanate.
Claim 25
Dependent Claim
37 words
The capacitor of claim 21 wherein a portion of the second electrode is formed of a ruthenate material selected from a group consisting of: calcium ruthenate, strontium ruthenate, barium ruthenate, thallium ruthenate, bismuth ruthenate, and lead ruthenate.
Claim 26
Dependent Claim
40 words
A capacitor comprising: a first electrode having a first portion formed of a ruthenate material which is resistive to oxidation in an oxygen-containing ambient; a second electrode; and a dielectric material formed between the first electrode and the second electrode.
Claim 27
Dependent Claim
40 words
A capacitor comprising: a first electrode having a first portion formed of a ruthenate material which is resistive to oxidation in an oxygen-containing ambient; a second electrode; and a dielectric material formed between the first electrode and the second electrode.
Claim 28
Dependent Claim
33 words
The capacitor of claim 23 wherein the first electrode is formed as a material selected from a group consisting of: calcium ruthenate, strontium ruthenate, barium ruthenate, thallium ruthenate, bismuth ruthenate, and lead ruthenate.
Claim 29
Dependent Claim
50 words
The capacitor of claim 23 wherein the dielectric material is selected from a group consisting of: lead zirconium titanate, tantalum pentoxide, silicon dioxide, oxide-nitride-oxide (ONO), titanium silicate, barium titanate, calcium titanate, bismuth titanate, strontium titanate, silicon nitride, lead zirconate, lead lanthanum zirconium titanate, titanium oxide, zirconium oxide, and lead titanate.
Claim 30
Dependent Claim
33 words
The capacitor of claim 23 wherein the capacitor is connected to a current electrode of a transistor to form one of either a dynamic random access memory cell or a non-volatile memory cell.
Claim 31
Independent Claim
49 words
A method for forming a capacitor comprising the steps of: forming a first electrode having a first portion made of a ruthenate material which is resistive to oxidation in an oxygen-containing ambient; forming a second electrode; and forming a dielectric material between the first electrode and the second electrode.
Claim 32
Independent Claim
49 words
A method for forming a capacitor comprising the steps of: forming a first electrode having a first portion made of a ruthenate material which is resistive to oxidation in an oxygen-containing ambient; forming a second electrode; and forming a dielectric material between the first electrode and the second electrode.
Claim 33
Dependent Claim
37 words
The method of claim 27 wherein the first portion of the first electrode is formed as a material selected from a group consisting of: calcium ruthenate, strontium ruthenate, barium ruthenate, thallium ruthenate, bismuth ruthenate, and lead ruthenate.
Claim 34
Dependent Claim
54 words
The method of claim 27 wherein the dielectric material is formed by a material selected from a group consisting of: lead zirconium titanate, tantalum pentoxide, silicon dioxide, oxide-nitride-oxide (ONO), titanium silicate, barium titanate, calcium titanate, bismuth titanate, strontium titanate, silicon nitride, lead zirconate, lead lanthanum zirconium titanate, titanium oxide, zirconium oxide, and lead titanate.
References Cited (Backward Citations)
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