US5701647A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for making an isolated sidewall capacitor having a compound plate electrode
Assignee: International Business Machines Corp
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Filing: 1997-01-22
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Granted: 1997-12-30
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Expires: 2017-01-22
Abstract
Abstract A capacitor structure is provided, with a first conductor on top of a substrate having at least one layer of dielectric material thereon; a first non-conductor on top of and substantially in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein; a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening; a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein; and a third conductor formed in the second opening.
Inventors
- 👤 Katherine Lynn Saenger
- 👤 David Edward Kotecki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:46
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/60; H10D1/68
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
108 words
A method for making a capacitor structure, comprising the steps of: forming a first conductor on a substrate having at least one layer of dielectric material thereon; forming a first non-conductor on top of and substantially in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein; forming a second conductor, in electrical contact with the first conductor, on the sidewalls of the first opening; forming a non-conductive sidewall spacer in the first opening on the exposed sidewalls of the second conductor, the non-conductive sidewall spacer having a second opening formed therein; and forming a third conductor in the second opening.
Claim 2
Independent Claim
108 words
A method for making a capacitor structure, comprising the steps of: forming a first conductor on a substrate having at least one layer of dielectric material thereon; forming a first non-conductor on top of and substantially in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein; forming a second conductor, in electrical contact with the first conductor, on the sidewalls of the first opening; forming a non-conductive sidewall spacer in the first opening on the exposed sidewalls of the second conductor, the non-conductive sidewall spacer having a second opening formed therein; and forming a third conductor in the second opening.
Claim 3
Dependent Claim
19 words
The method of claim 1 wherein the second conductor forms approximately a 90 degree angle with the first conductor.
Claim 4
Dependent Claim
27 words
The method of claim 1, further comprising the steps of: forming a third opening in the third conductor; and filling the third opening with a fill material.
Claim 5
Dependent Claim
27 words
The method of claim 1 further comprising the step of forming a second non-conductor below the first conductor prior to the step of forming the first conductor.
Claim 6
Dependent Claim
17 words
The method of claim 4 wherein the second non-conductor is substantially in register with the first conductor.
Claim 7
Dependent Claim
31 words
The method of claim 1 further comprising the step of forming a conductive plug in the substrate to provide electrical contact between the third conductor and circuit elements in the substrate.
Claim 8
Dependent Claim
34 words
The method of claim 6 further comprising the step of forming a diffusion barrier layer between the conductive plug and the third conductor, the diffusion barrier being substantially in register with the conductive plug.
Claim 9
Dependent Claim
25 words
The method of claim 1 further comprising the step of forming a conductive sidewall spacer in between the non-conductive sidewall spacer and the third conductor.
Claim 10
Dependent Claim
37 words
The method of claim 8 wherein the substrate dielectric layer has a third opening in line with the second opening, and further comprising the step of simultaneously filling the second and third openings with the third conductor.
Claim 11
Dependent Claim
37 words
The method of claim 1 wherein the substrate dielectric layer has a third opening in line with the second opening, and further comprising the step of simultaneously filling the second and third openings with the third conductor.
Claim 12
Dependent Claim
25 words
The method of claim 1 further comprising the step of forming a second non-conductor on top of and substantially in register with the first non-conductor.
Claim 13
Independent Claim
177 words
A method for making a capacitor structure, comprising the steps of: forming a layer of disposable material on a substrate having at least one layer of dielectric material thereon; patterning said layer of disposable material to leave a disposable plug; forming a layer of conductive material over said disposable plug and said substrate; forming a layer of dielectric material over said layer of conductive material, said layer of dielectric material being thick enough to fill and completely cover the conductive layer; planarizing said layer of dielectric material to expose a horizontal portion of the conductor material which overlies the disposable plug; removing the horizontal portion of the conductor material which overlies the disposable plug; removing the disposable plug to leave a dielectric-filled conductive structure which has an opening formed therein exposing a conductive sidewall; reducing the height of the conductive sidewall to bring it below the level of the dielectric fill; forming a non-conductive sidewall spacer on the conductive sidewall, the non-conductive sidewall having an opening formed therein; and forming a conductor in the non-conductive sidewall opening.
Claim 14
Independent Claim
177 words
A method for making a capacitor structure, comprising the steps of: forming a layer of disposable material on a substrate having at least one layer of dielectric material thereon; patterning said layer of disposable material to leave a disposable plug; forming a layer of conductive material over said disposable plug and said substrate; forming a layer of dielectric material over said layer of conductive material, said layer of dielectric material being thick enough to fill and completely cover the conductive layer; planarizing said layer of dielectric material to expose a horizontal portion of the conductor material which overlies the disposable plug; removing the horizontal portion of the conductor material which overlies the disposable plug; removing the disposable plug to leave a dielectric-filled conductive structure which has an opening formed therein exposing a conductive sidewall; reducing the height of the conductive sidewall to bring it below the level of the dielectric fill; forming a non-conductive sidewall spacer on the conductive sidewall, the non-conductive sidewall having an opening formed therein; and forming a conductor in the non-conductive sidewall opening.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-12-29 | 2001-06-30 | 2001-12-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-12-29 | 2005-06-30 | 2005-12-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-12-29 | 2009-06-30 | 2009-12-30 | $7700.00 | Window Closed / Lapsed |