US5383088A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Storage capacitor with a conducting oxide electrode for metal-oxide dielectrics
Assignee: International Business Machines Corp
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Filing: 1993-08-09
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Granted: 1995-01-17
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Expires: 2013-08-09
Abstract
Abstract A capacitor having a high dielectric constant and method of making the same is disclosed. The capacitor comprises a bottom electrode comprising a conductive oxide deposited upon a substrate by chemical vapor deposition. A dielectric layer having a high dielectric constant is deposited upon the conductive oxide. Lastly, a counter electrode is formed upon the dielectric layer.
Inventors
- 👤 Jonathan D. Chapple-Sokol
- 👤 Richard A. Conti
- 👤 Jeffrey P. Gambino
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 10:52
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/60; H10D1/68
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
118 words
A method of forming a capacitor, said method comprising the steps of: a) depositing a conductive oxide upon a substrate by chemical vapor deposition, said conductive oxide consisting of zinc oxide (ZnO), said conductive oxide further comprising a conductive oxide selected from the group consisting of boron (B) doped zinc oxide (ZnO), and fluorine (F) doped zinc oxide (ZnO); b) depositing a dielectric layer upon said conductive oxide by chemical vapor deposition, said dielectric layer having a high dielectric constant and being selected from the group consisting of tantalum oxide (Ta 2 O 5 ), strontium titanium oxide (SrTiO 5 ), and barium titanium oxide (BaTiO 3 ); and c) forming a counter electrode upon said dielectric layer.
Claim 2
Independent Claim
118 words
A method of forming a capacitor, said method comprising the steps of: a) depositing a conductive oxide upon a substrate by chemical vapor deposition, said conductive oxide consisting of zinc oxide (ZnO), said conductive oxide further comprising a conductive oxide selected from the group consisting of boron (B) doped zinc oxide (ZnO), and fluorine (F) doped zinc oxide (ZnO); b) depositing a dielectric layer upon said conductive oxide by chemical vapor deposition, said dielectric layer having a high dielectric constant and being selected from the group consisting of tantalum oxide (Ta 2 O 5 ), strontium titanium oxide (SrTiO 5 ), and barium titanium oxide (BaTiO 3 ); and c) forming a counter electrode upon said dielectric layer.
Claim 3
Dependent Claim
12 words
The method of claim 1, wherein the capacitor is a stacked capacitor.
Claim 4
Dependent Claim
113 words
A capacitor comprising: a) a bottom electrode comprising a conductive oxide deposited upon a substrate by chemical vapor deposition, the conductive oxide consisting of zinc oxide (ZnO), said conductive oxide further comprising a conductive oxide selected from the group consisting of boron (B) doped zinc oxide (ZnO) and fluorine (F) doped zinc oxide (ZnO); b) a dielectric layer deposited upon said conductive oxide by chemical vapor deposition, said dielectric layer having a high dielectric constant and being selected from the group consisting of tantalum oxide (Ta 2 O 5 ), strontium titanium oxide (SrTiO 3 ), and barium titanium oxide (BaTiO 3 ); and c) a counter electrode formed upon said dielectric layer.
Claim 5
Dependent Claim
113 words
A capacitor comprising: a) a bottom electrode comprising a conductive oxide deposited upon a substrate by chemical vapor deposition, the conductive oxide consisting of zinc oxide (ZnO), said conductive oxide further comprising a conductive oxide selected from the group consisting of boron (B) doped zinc oxide (ZnO) and fluorine (F) doped zinc oxide (ZnO); b) a dielectric layer deposited upon said conductive oxide by chemical vapor deposition, said dielectric layer having a high dielectric constant and being selected from the group consisting of tantalum oxide (Ta 2 O 5 ), strontium titanium oxide (SrTiO 3 ), and barium titanium oxide (BaTiO 3 ); and c) a counter electrode formed upon said dielectric layer.
Claim 6
Dependent Claim
12 words
The capacitor of claim 3, wherein the capacitor is a stacked capacitor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-01-16 | 1998-07-18 | 1999-01-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-01-16 | 2002-07-18 | 2003-01-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-01-16 | 2006-07-18 | 2007-01-17 | $7700.00 | Window Closed / Lapsed |