US5195018A
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High dielectric constant capacitor and method for manufacturing the same
Assignee: Samsung Electronics Co Ltd
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Filing: 1992-06-17
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Granted: 1993-03-16
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Expires: 2012-06-17
Abstract
Abstract A high dielectric constant film comprised of at least a first dual-film layer, which includes a first tantalum oxide film, and a first metal oxide film which is made of a metal oxide whose valence is smaller than that of tantalum, and whose dielectric constant is equal to or greater than that of tantalum oxide. The first metal oxide film preferably has a thickness of less than approximately 50 angstroms, in order to thereby avoid the formation of a columnar structure, which has been identified as a principal cause of the high leakage current problem which has plagued presently available high dielectric constant capacitors. The first tantalum oxide film preferably has a thickness in the range of between approximately 5 angstroms to approximately 200 angstroms, with the ratio of the thickness of the first tantalum oxide film to the thickness of the first metal oxide film being in the range of 1:10 to 100:1. The high dielectric constant film preferably further includes a plurality of additional dual-film layers formed on the first dual-film layer, to thereby provide a multilayer high dielectric constant film. Each of the additional dual-film layers is preferably of the same construction as that of the first dual-film layer. The present invention also encompasses a high dielectric constant capacitor which incorporates the above-described high dielectric constant film, and a method for manufacturing the same.
Inventors
- 👤 Keewon Kwon
- 👤 Youngwug Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 04:22
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10D; H10D1/00; H10D1/60; H10D1/68; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/20; Y; Y10; Y10T; Y10T29/00; Y10T29/43; Y10T29/435
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
104 words
A high dielectric constant capacitor, including: a substrate; a first electrode film formed on said substrate; a first tantalum oxide film formed on said first electrode film; a first metal oxide film formed on said first tantalum oxide film, wherein said first metal oxide film is made of a metal oxide whose valence is smaller than that of tantalum, and whose dielectric constant is equal to or greater than that of tantalum oxide; wherein said first tantalum oxide film and said first metal oxide film together comprise a high dielectric constant film; and a second electrode film formed on said high dielectric constant film.
Claim 2
Dependent Claim
104 words
A high dielectric constant capacitor, including: a substrate; a first electrode film formed on said substrate; a first tantalum oxide film formed on said first electrode film; a first metal oxide film formed on said first tantalum oxide film, wherein said first metal oxide film is made of a metal oxide whose valence is smaller than that of tantalum, and whose dielectric constant is equal to or greater than that of tantalum oxide; wherein said first tantalum oxide film and said first metal oxide film together comprise a high dielectric constant film; and a second electrode film formed on said high dielectric constant film.
Claim 3
Dependent Claim
29 words
The capacitor as set forth in claim 1, wherein said first tantalum oxide film has a thickness in the range of between approximately 5 angstroms to approximately 200 angstroms.
Claim 4
Dependent Claim
23 words
The capacitor as set forth in claim 1, wherein said first metal oxide film has a thickness of less than approximately 50 angstroms.
Claim 5
Dependent Claim
37 words
The capacitor as set forth in claim 3, wherein the ratio of the thickness of said first tantalum oxide film to the thickness of said first metal oxide film is in the range of 1:10 to 100:1.
Claim 6
Dependent Claim
72 words
The capacitor as set forth in claim 4, wherein said metal oxide is selected from a group comprised of TiO 2 , SnO 2 , ZrO 2 , HfO 2 , WO 2 , Al 2 O 3 , Cr 2 O 3 , Y 2 O 3 , La 2 O 3 , Bi 2 O 3 , Th 2 O 3 , PbO, BaO, SnO, SrO, CaO, MnO, and MgO.
Claim 7
Dependent Claim
49 words
The capacitor as set forth in claim 1, wherein said high dielectric constant film further includes a plurality of additional dual-film layers formed on said first dual-film layer, wherein each of said additional dual-film layers is comprised of a respective tantalum oxide film and a respective metal oxide film.
Claim 8
Dependent Claim
33 words
The capacitor as set forth in claim 6, wherein said high dielectric constant film further includes an additional single layer of tantalum oxide formed on an uppermost one of said additional dual-film layers.
Claim 9
Dependent Claim
33 words
The capacitor as set forth in claim 6, wherein said high dielectric constant film further includes an additional single layer of metal oxide formed on an uppermost one of said additional dual-film layers.
Claim 10
Dependent Claim
27 words
The capacitor as set forth in claim 6, wherein said respective metal oxide film of each said additional dual-film layer is also made of said metal oxide.
Claim 11
Dependent Claim
72 words
The capacitor as set forth in claim 9, wherein said metal oxide is selected from a group comprised of TiO 2 , SnO 2 , ZrO 2 , HfO 2 , WO 2 , Al 2 O 3 , Cr 2 O 3 , Y 2 O 3 , La 2 O 3 , Bi 2 O 3 , Th 2 O 3 , PbO, BaO, SnO, SrO, CaO, MnO, and MgO.
Claim 12
Dependent Claim
41 words
The capacitor as set forth in claim 10, wherein the ratio of the thickness of said respective tantalum oxide film of each said additional dual-film layer to the thickness of said respective metal oxide film of each said 1:10 to 100:1.
Claim 13
Dependent Claim
35 words
The capacitor as set forth in claim 11, wherein said respective tantalum oxide layer of each said additional dual-film layer has a thickness in the range of between approximately 5 angstroms to approximately 200 angstroms.
Claim 14
Dependent Claim
29 words
The capacitor as set forth in claim 12, wherein said respective metal oxide layer of each said additional dual-film layer has a thickness of less than approximately 50 angstroms.
Claim 15
Independent Claim
107 words
A method for manufacturing a high dielectric constant capacitor, including the steps of: forming a first electrode film on a substrate; forming a first tantalum oxide film on said first electrode film; forming a first metal oxide film on said first tantalum oxide film, said metal oxide film being formed of a metal oxide whose valence is smaller than that of tantalum, and whose dielectric constant is equal to or greater than that of tantalum oxide, whereby said first tantalum oxide film and said first metal oxide film together comprise a high dielectric constant film; and, forming a second electrode film on said high dielectric constant film.
Claim 16
Independent Claim
107 words
A method for manufacturing a high dielectric constant capacitor, including the steps of: forming a first electrode film on a substrate; forming a first tantalum oxide film on said first electrode film; forming a first metal oxide film on said first tantalum oxide film, said metal oxide film being formed of a metal oxide whose valence is smaller than that of tantalum, and whose dielectric constant is equal to or greater than that of tantalum oxide, whereby said first tantalum oxide film and said first metal oxide film together comprise a high dielectric constant film; and, forming a second electrode film on said high dielectric constant film.
Claim 17
Dependent Claim
38 words
The method as set forth in claim 14, further including the steps of: forming an additional tantalum oxide film on said first metal oxide film; and, forming an additional metal oxide film on said additional tantalum oxide film.
Claim 18
Dependent Claim
114 words
The method as set forth in claim 14, further including the step of sequentially repeating said forming a tantalum oxide step and said forming a metal oxide film step, a plurality of times, to thereby form a plurality, n, of dual-film layers, each comprised of a respective tantalum oxide film and a respective metal oxide film; wherein said first tantalum oxide film and said first metal oxide film together comprise a first one of said n dual-film layers, and the last-formed tantalum oxide film and the last-formed metal oxide film together comprise an nth one of said n dual-film layers; and, wherein further, said n dual-film layers together comprise said high dielectric constant film.
Claim 19
Dependent Claim
37 words
The method as set forth in claim 16, wherein said tantalum oxide film of each of said n dual-film layers is formed to a thickness in the range of between approximately 5 angstroms to approximately 200 angstroms.
Claim 20
Dependent Claim
31 words
The method as set forth in claim 17, wherein said metal oxide film of each of said n dual-film layers is formed to a thickness of less than approximately 50 angstroms.
Claim 21
Dependent Claim
49 words
The method as set forth in claim 18, wherein the ratio of the thickness of said tantalum oxide film of each of said n dual-film layers to the thickness of said metal oxide film of each of said n dual-film layers, is in the range of 1:10 to 100:1.
Claim 22
Dependent Claim
72 words
The method as set forth in claim 19, wherein said metal oxide is selected from a group comprised of TiO 2 , SnO 2 , ZrO 2 , HfO 2 , WO 2 , Al 2 O 3 , Cr 2 O 3 , Y 2 O 3 , La 2 O 3 , Bi 2 O 3 , Th 2 O 3 , PbO, BaO, SnO, SrO, CaO, MnO, and MgO.
Claim 23
Dependent Claim
20 words
The method as set forth in claim 20, further including the step of forming an additional said n dual-film layers.
Claim 24
Dependent Claim
31 words
The method as set forth in claim 20, further including the step of forming an additional single layer of said metal oxide on said nth one of said n dual-film layers.
Claim 25
Dependent Claim
37 words
The method as set forth in claim 19, wherein said step of forming a first tantalum oxide film, said step of forming a first metal oxide film, and said sequentially repeating step, are each vapor deposition process.
Claim 26
Dependent Claim
79 words
The method as set forth in claim 19, wherein said step of forming a first tantalum oxide film, said step of forming a first metal oxide film, and said sequentially repeating step, are carried out by means of a deposition process whereby the time at which deposition of said metal oxide film of each of said n dual-film layers begins, does not overlap the time at which deposition of its corresponding said tantalum oxide film ends, and vice versa.
Claim 27
Dependent Claim
46 words
The method as set forth in claim 24, wherein the starting time for deposition of said metal oxide film of each of said n dual-film layers, is substantially concurrent with the ending time for the deposition of its corresponding said tantalum oxide film, and vice versa.
Claim 28
Dependent Claim
50 words
The method as set forth in claim 24, wherein the starting time for deposition of said metal oxide film of each of said n dual-film layers, is separated by a predetermined time interval from the ending time for the deposition of its corresponding said tantalum oxide film, and vice versa.
Claim 29
Dependent Claim
78 words
The method as set forth in claim 19, wherein said step of forming a first tantalum oxide film, said step of forming a first metal oxide film, and said sequentially repeating step, are carried out by means of a deposition process whereby the time at which deposition of said metal oxide film of each of said n dual-film layers begins, partially overlaps the time at which deposition of its corresponding said tantalum oxide film ends, and vice versa.
Claim 30
Dependent Claim
86 words
The method as set forth in claim 19, where said step of forming a first tantalum oxide film, said step of forming a first metal oxide film, and said sequentially repeating step, are carried during deposition of said tantalum oxide film of each of said n dual-film layers, said metal oxide is simultaneously deposited, but at a very low deposition speed, so that only minute quantities of said metal oxide are deposited during deposition of said tantalum oxide film of each of said n dual-film layers.
Claim 31
Dependent Claim
62 words
The method as set forth in claim 28, wherein, additionally, during deposition of said metal oxide film of each of said n dual-film layers, said tantalum oxide is simultaneously deposited, but at a very low deposition speed, so that only minute quantities of said tantalum oxide are deposited during deposition of said metal oxide film of each of said n dual-film layers.
Claim 32
Dependent Claim
37 words
The method as set forth in claim 19, wherein said first electrode film and said second electrode film are made of a conductive material selected from a group comprised of doped polycrystalline silicon, amorphous silicon, and tungsten.
References Cited (Backward Citations)
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