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US4631633A
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US
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Thin film capacitors and method of making the same
Assignee: Philips North America LLC
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Filing: 1985-12-23
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Granted: 1986-12-23
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Expires: 2005-12-23
Abstract
Abstract A thin film capacitor is formed of a thin crystalline electrically insulative or semiconductive substrate. With the insulative substrate a thin conductive metal layer is deposited on the substrate and a thin film of a crystalline strontium barium niobate deposited on the thin conductive metal layer so that its 2.77 ANGSTROM spaced atomic planes are oriented in a non-perpendicular manner to the substrate and an additional thin conductive layer is deposited on the surface of the strontium barium niobate film. When a semiconductive substrate is employed the strontium barium niobate film is deposited directly on the substrate. These capacitors exhibit a low temperature coefficient of capacitance and a high capacitance density.
Inventors
- 👤 Avner A. Shaulov
- 👤 Stanley J. Lukasik
- 👤 Myron H. Frommer
- 👤 Walter K. Zwicker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 10:46
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/002; H01G4/005; H01G4/008; H01G4/018; H01G4/06; H01G4/08; H01G4/12; H01G4/1209; H01G4/1254; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; Y; Y10; Y10T; Y10T29/00; Y10T29/43; Y10T29/435
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
115 words
A thin film capacitor having a low temperature coefficient of capacitance and a high capacitance density, said capacitor consisting essentially of a thin crystalline electrically insulative substrate, a first thin crystalline film of a conductive metal situated on a surface of said thin substrate, a thin film of crystalline strontium barium niobate having a composition of the formula Sr 1-x Ba x Nb 2 O 6 wherein 25≦x≦75 and having 2.77 Å spaced atomic planes oriented non-perpendicularly to said surface of said thin substrate situated on said first crystalline film of a conductive metal and a second thin film of a conductive metal situated on the surface of said crystalline film of strontium barium niobate.
Claim 2
Dependent Claim
115 words
A thin film capacitor having a low temperature coefficient of capacitance and a high capacitance density, said capacitor consisting essentially of a thin crystalline electrically insulative substrate, a first thin crystalline film of a conductive metal situated on a surface of said thin substrate, a thin film of crystalline strontium barium niobate having a composition of the formula Sr 1-x Ba x Nb 2 O 6 wherein 25≦x≦75 and having 2.77 Å spaced atomic planes oriented non-perpendicularly to said surface of said thin substrate situated on said first crystalline film of a conductive metal and a second thin film of a conductive metal situated on the surface of said crystalline film of strontium barium niobate.
Claim 3
Dependent Claim
19 words
The thin film capacitor of claim 1 wherein the thin crystalline substrate is a thin crystalline aluminum oxide substrate.
Claim 4
Dependent Claim
24 words
The thin film capacitor of claim 1 wherein said first and said second films of conductive metal are films of platinum, gold or nickel-chrome.
Claim 5
Dependent Claim
24 words
The thin film capacitor of claim 2 wherein said first and said second films of conductive metal are films of platinum, gold or nickel-chrome.
Claim 6
Dependent Claim
15 words
The thin film capacitor of claim 4 wherein the substrate is a thin sapphire plate.
Claim 7
Dependent Claim
19 words
The thin film capacitor of claim 3 wherein the thickness of the aluminum oxide substrate is about 0.3-3 mm.
Claim 8
Dependent Claim
20 words
The thin film capacitor of claim 6 wherein the thickness of the strontium barium niobate film is about 0.05-10 microns.
Claim 9
Dependent Claim
85 words
A thin film capacitor having a low temperature coefficient of capacitance and a high capacitance density, said capacitor consisting essentially of a thin crystalline semiconductor substrate, a thin film of crystalline strontium niobate having a composition of the formula Sr 1-x Ba x Nb 2 O 6 wherein 25≦x≦75 and having 2.77 Å spaced atomic planes oriented non-perpendicularly to said surface of said thin substrate and a thin film of conductive metal situated on the surface of said thin film of crystalline strontium barium niobate.
Claim 10
Dependent Claim
85 words
A thin film capacitor having a low temperature coefficient of capacitance and a high capacitance density, said capacitor consisting essentially of a thin crystalline semiconductor substrate, a thin film of crystalline strontium niobate having a composition of the formula Sr 1-x Ba x Nb 2 O 6 wherein 25≦x≦75 and having 2.77 Å spaced atomic planes oriented non-perpendicularly to said surface of said thin substrate and a thin film of conductive metal situated on the surface of said thin film of crystalline strontium barium niobate.
Claim 11
Dependent Claim
17 words
The thin film capacitor of claim 8 wherein said semiconductor substrate is a semiconductive crystalline silicon substrate.
Claim 12
Independent Claim
143 words
A method of producing a thin film capacitor having a low temperature coefficient of capacitance and a high capacitance density, said method comprising depositing by rf sputtering in an inert gas atmosphere a first conductive thin crystalline metal film on a surface of a thin inorganic crystalline electrically insulative substrate, depositing on the surface of said first metal film, by rf sputtering in an atmosphere of about a 50/50 mixture of oxygen and an inert gas, a thin crystalline film of a strontium barium niobate of the formula Sr 1-x Ba x Nb 2 O 6 wherein 25≦x≦75 and having 2.77 Å spaced atomic planes oriented in a non-perpendicular manner to the surface of said substrate and then depositing by rf sputtering in an inert gas atmosphere a second thin conductive crystalline metal film on the surface of said strontium barium niobate film.
Claim 13
Independent Claim
143 words
A method of producing a thin film capacitor having a low temperature coefficient of capacitance and a high capacitance density, said method comprising depositing by rf sputtering in an inert gas atmosphere a first conductive thin crystalline metal film on a surface of a thin inorganic crystalline electrically insulative substrate, depositing on the surface of said first metal film, by rf sputtering in an atmosphere of about a 50/50 mixture of oxygen and an inert gas, a thin crystalline film of a strontium barium niobate of the formula Sr 1-x Ba x Nb 2 O 6 wherein 25≦x≦75 and having 2.77 Å spaced atomic planes oriented in a non-perpendicular manner to the surface of said substrate and then depositing by rf sputtering in an inert gas atmosphere a second thin conductive crystalline metal film on the surface of said strontium barium niobate film.
Claim 14
Independent Claim
108 words
A method of producing a thin film capacitor having a low temperature coefficient of capacitance and a high capacitance density, said method comprising depositing by rf sputtering in an atmosphere of about a 50/50 mixture of oxygen and an inert gas, a thin crystalline film of a strontium barium niobate of the formula Sr 1-x Ba x Nb 2 O 6 wherein 25≦x≦75 and having 2.77 Å spaced atomic planes oriented in a non-perpendicular manner to the surface of said substrate and then depositing by rf sputtering in an inert gas atmosphere a second thin conductive crystalline metal film on the surface of said strontium barium niobate film.
Claim 15
Independent Claim
108 words
A method of producing a thin film capacitor having a low temperature coefficient of capacitance and a high capacitance density, said method comprising depositing by rf sputtering in an atmosphere of about a 50/50 mixture of oxygen and an inert gas, a thin crystalline film of a strontium barium niobate of the formula Sr 1-x Ba x Nb 2 O 6 wherein 25≦x≦75 and having 2.77 Å spaced atomic planes oriented in a non-perpendicular manner to the surface of said substrate and then depositing by rf sputtering in an inert gas atmosphere a second thin conductive crystalline metal film on the surface of said strontium barium niobate film.
References Cited (Backward Citations)
US3279947A
Cited
US3326718A
Cited
US3470018A
Cited
US3819990A
Cited
US4038167A
Cited
JPS56147424A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-12-22 | 1990-06-23 | 1990-12-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-12-22 | 1994-06-23 | 1994-12-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-12-22 | 1998-06-23 | 1998-12-23 | $7700.00 | Window Closed / Lapsed |