US4038167A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a thin film capacitor
Assignee: Kyocera Avx Components Corp
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Filing: 1976-02-09
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Granted: 1977-07-26
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Expires: 1996-02-09
Abstract
Abstract A method of forming a thin film capacitor having a tantalum oxide dielectric is described. A dielectric substrate having a non-tantalum electrically conductive film electrode formed thereon is disposed within an oxygen-nitrogen-inert gas containing vacuum environment. A film of tantalum oxide is applied over the conductive film by r-f sputtering of a tantalum oxide target within said vacuum environment while the dielectric substrate and conductive film are being cooled. The composite may then be removed from the oxygen-nitrogen-inert gas vacuum environment and a second electrically conductive film electrode applied over the so-formed tantalum oxide film.
Inventors
- 👤 Peter L. Young
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 14:43
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; Y; Y10; Y10T; Y10T29/00; Y10T29/43; Y10T29/435
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
113 words
A method of forming a capacitor comprising the sequential steps of providing a dielectric substrate, applying to said dielectric substrate a first electrically conductive non-tantalum film to form a first capacitor electrode, disposing said substrate and conductive film within a vacuum environment containing an oxygen-nitrogen-inert gas mixture, r-f sputtering a film of tantalum oxide of desired thickness over said conductive film within said vacuum environment, said tantalum oxide being sputtered from a tantalum oxide target, cooling said dielectric substrate and conductive film while said film of tantalum oxide is being sputtered thereon, and thereafter applying a second electrically conductive non-tantalum film over said film of tantalum oxide to form a counter capacitor electrode.
Claim 2
Independent Claim
113 words
A method of forming a capacitor comprising the sequential steps of providing a dielectric substrate, applying to said dielectric substrate a first electrically conductive non-tantalum film to form a first capacitor electrode, disposing said substrate and conductive film within a vacuum environment containing an oxygen-nitrogen-inert gas mixture, r-f sputtering a film of tantalum oxide of desired thickness over said conductive film within said vacuum environment, said tantalum oxide being sputtered from a tantalum oxide target, cooling said dielectric substrate and conductive film while said film of tantalum oxide is being sputtered thereon, and thereafter applying a second electrically conductive non-tantalum film over said film of tantalum oxide to form a counter capacitor electrode.
Claim 3
Dependent Claim
31 words
The method of claim 1 wherein the combined amount of oxygen and nitrogen in said gas mixture comprises at least about 2 percent of the total gas pressure within said environment.
Claim 4
Dependent Claim
21 words
The method of claim 2 wherein said vacuum environment has a total pressure of about 5 × 10 - 3 Torr.
Claim 5
Dependent Claim
20 words
The method of claim 3 wherein at least one of said electrically conductive aluminum films is applied by vapor deposition.
Claim 6
Dependent Claim
18 words
The method of claim 3 wherein at least one of said electrically conductive films is formed of aluminum.
Claim 7
Dependent Claim
16 words
The method of claim 1 wherein one of said electrically conductive films is formed of aluminum.
Claim 8
Dependent Claim
17 words
The method of claim 6 wherein the other of said electrically conductive films is formed of aluminum.
Claim 9
Dependent Claim
20 words
The method of claim 1 wherein said vacuum environment has a pressure of about 5 × 10 - 3 Torr.
Claim 10
Dependent Claim
86 words
The method of claim 1 further comprising the steps of disposing the composite so formed within a vacuum environment containing an oxygen-nitrogen-inert gas mixture, sputtering a second film of tantalum oxide of desired thickness over said second conductive film within said vacuum environment, said second film of tantalum oxide being sputtered from a tantalum oxide target, cooling said composite while said second film of tantalum oxide is being sputtered thereon, and thereafter applying a third electrically conductive non-tantalum film over said second film of tantalum oxide.
Claim 11
Dependent Claim
11 words
A thin film capacitor formed by the method of claim 1.
References Cited (Backward Citations)
US3257305A
Cited
US3969197A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-07-25 | 1981-01-24 | 1981-07-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-07-25 | 1985-01-24 | 1985-07-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-07-25 | 1989-01-24 | 1989-07-26 | $7700.00 | Window Closed / Lapsed |