US4423087A
Expired / Lapsed
US
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Thin film capacitor with a dual bottom electrode structure
Assignee: International Business Machines Corp
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Filing: 1981-12-28
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Granted: 1983-12-27
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Expires: 2001-12-28
Abstract
Abstract A thin film capacitor having a dual bottom electrode is provided. The bottom electrode comprises a first layer of metal and a second layer of platinum, said metal of the first layer being of the nature of forming a stable intermetallic phase with the platinum during heat treatment. The metal of the first layer is typically selected from the group consisting of Hf, Zr, and Ta. The thin film capacitor is suitable for the decoupling capacitor of VLSI.
Inventors
- 👤 James K. Howard
- 👤 Kris V. Srikrishnan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 00:28
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/002; H01G4/005; H01G4/008; H01G4/018; H01G4/06; H01G4/08; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12535; Y10T428/12576; Y10T428/12597; Y10T428/12604; Y10T428/12611; Y10T428/12771; Y10T428/12806; Y10T428/12812; Y10T428/12819; Y10T428/12861; Y10T428/12875
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
54 words
A method for forming a thin film capacitor comprising the steps of: depositing on a substrate a first layer of metal selected from the group consisting of hafnium, zirconium, and tantalum, depositing a second layer of platinum on said first layer, depositing a dielectric layer on said second layer, and forming a counter electrode.
Claim 2
Independent Claim
54 words
A method for forming a thin film capacitor comprising the steps of: depositing on a substrate a first layer of metal selected from the group consisting of hafnium, zirconium, and tantalum, depositing a second layer of platinum on said first layer, depositing a dielectric layer on said second layer, and forming a counter electrode.
Claim 3
Dependent Claim
24 words
The method of claim 1, wherein said dielectric layer being a dual layer of Si 3 N 4 and Ta 2 O 5 .
Claim 4
Dependent Claim
28 words
The method of claim 1, wherein said dielectric layer is deposited at a temperature where intermetallic phase is formed at the interface of said first and second layers.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-12-26 | 1987-06-27 | 1987-12-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-12-26 | 1991-06-27 | 1991-12-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-12-26 | 1995-06-27 | 1995-12-27 | $7700.00 | Window Closed / Lapsed |