US4751149A
Expired / Lapsed
US
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Chemical vapor deposition of zinc oxide films and products
Assignee: Siemens Solar Industries LP
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Filing: 1987-03-12
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Granted: 1988-06-14
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Expires: 2007-03-12
Abstract
Abstract Zinc oxide is applied to a substrate at a low temperature by using a mixture of an organozinc compound and water carried in an inert gas. The resulting zinc oxide film has a relatively low resistivity which can be varied by addition of a group III element.
Inventors
- 👤 Pantham S. Vijayakumar
- 👤 Kimberly A. Blaker
- 👤 Robert D. Wieting
- 👤 Boon Wong
- 👤 Arvind T. Halani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 16:12
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/138; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/407; H10F77/00; H10F77/20; H10F77/244; H10F77/251; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/9335; Y10S428/938
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
66 words
A process for depositing a zinc oxide film on a substrate, which comprises introducing an organozinc compound vapor, water vapor and an insert carrier gas into a chamber containing a substrate heated to a temperature of up to about 200° C. to deposit a zinc oxide film having a resistivity of less than about 2.5×10 -3 ohm-centimeter on the substrate in the absence of plasma-enhanced deposition.
Claim 2
Dependent Claim
66 words
A process for depositing a zinc oxide film on a substrate, which comprises introducing an organozinc compound vapor, water vapor and an insert carrier gas into a chamber containing a substrate heated to a temperature of up to about 200° C. to deposit a zinc oxide film having a resistivity of less than about 2.5×10 -3 ohm-centimeter on the substrate in the absence of plasma-enhanced deposition.
Claim 3
Dependent Claim
21 words
The process of claim 1 wherein the organozinc compound has the formula R 2 Zn, with R being an alkyl radical.
Claim 4
Dependent Claim
11 words
The process of claim 1 wherein the organozinc compound is dimethylzinc.
Claim 5
Dependent Claim
11 words
The process of claim 1 wherein the organozinc compound is diethylzinc.
Claim 6
Dependent Claim
21 words
The process of claim 1, 2, 3 or 4 wherein the film has a thickness of up to about 2 microns.
Claim 7
Dependent Claim
56 words
The process of claim 1, 2, 3 or 4 wherein the film is formed by introducing into the chamber an organozinc compound vapor in an amount of up to about 0.5 mole fraction in its inert carrier gas stream, and water vapor in an amount of about one to three moles per mole of organozinc compound.
Claim 8
Dependent Claim
17 words
The process of claim 6 wherein the film has a thickness of up to about 2 microns.
Claim 9
Dependent Claim
75 words
A process for depositing a zinc oxide film on a substrate, which comprises introducing an organozinc compound vapor, water vapor and an inert carrier gas into a chamber containing a substrate heated to a temperature of up to about 150° C. to deposit a zinc oxide film having a resistivity of less than about 2.5×10 -3 ohm-centimeter and a thickness of up to about 2 microns on the substrate in the absence of plasma-enhanced deposition.
Claim 10
Dependent Claim
75 words
A process for depositing a zinc oxide film on a substrate, which comprises introducing an organozinc compound vapor, water vapor and an inert carrier gas into a chamber containing a substrate heated to a temperature of up to about 150° C. to deposit a zinc oxide film having a resistivity of less than about 2.5×10 -3 ohm-centimeter and a thickness of up to about 2 microns on the substrate in the absence of plasma-enhanced deposition.
Claim 11
Dependent Claim
21 words
The process of claim 8 wherein the organozinc compound has the formula R 2 Zn, with R being an alkyl radical.
Claim 12
Dependent Claim
11 words
The process of claim 8 wherein the organozinc compound is diemthylzinc.
Claim 13
Dependent Claim
11 words
The process of claim 8 wherein the organozinc compound is diethylzinc.
Claim 14
Dependent Claim
80 words
A process for depositing a zinc oxide film containing a group III element on a substrate, which comprises introducing an organozinc compound vapor, water vapor, a volatile compound of a group III element and an inert carrier gas into a chamber containing a substrate heated to a temperature of about 100° C. to 200° C. to deposit a zinc oxide film having a resistivity of less than about 2.5×10 -3 ohm-centimeter on the substrate in the absence of plasma-enhanced deposition.
Claim 15
Dependent Claim
80 words
A process for depositing a zinc oxide film containing a group III element on a substrate, which comprises introducing an organozinc compound vapor, water vapor, a volatile compound of a group III element and an inert carrier gas into a chamber containing a substrate heated to a temperature of about 100° C. to 200° C. to deposit a zinc oxide film having a resistivity of less than about 2.5×10 -3 ohm-centimeter on the substrate in the absence of plasma-enhanced deposition.
Claim 16
Dependent Claim
21 words
The process of claim 12 wherein the organozinc compound has the formula R 2 Zn, with R being an alkyl radical.
Claim 17
Dependent Claim
11 words
The process of claim 12 wherein the organozinc compound is dimethylzinc.
Claim 18
Dependent Claim
11 words
The process of claim 12 wherein the organozinc compound is diethylzinc.
Claim 19
Dependent Claim
22 words
The process of claim 12, 13, 14 or 15 wherein the group III element is boron and the volatile compound is diborane.
Claim 20
Dependent Claim
73 words
The process of claim 12, 13, 14 or 15 wherein the film is formed by introducing into the chamber an organozinc compound vapor in an amount of up to about 0.5 mole fraction in its insert carrier gas stream, water vapor in an amount of about one to three mole per mole of organozinc compound, and the volatile compound in an amount of about one to four mole percent of the organozinc compound.
Claim 21
Dependent Claim
17 words
The process of claim 17 wherein the film has a thickness of up to about 2 microns.
Claim 22
Dependent Claim
120 words
A process for depositing a zinc oxide film containing boron on a substrate, which comprises introducing: (a) an organozinc compound vapor selected from the group consisting of dimethylzinc and diethylzinc, (b) water vapor, (c) diborane and (d) an inert carrier gas into a chamber containing a substrate heated to a temperature of up to about 200° C. to deposit a zinc oxide film having a resistivity of less than about 2.5×10 -3 ohm-centimeter on the substrate in the absence of plasma-enhanced deposition, the water being introduced in a proportion of about one to three moles per mole of the organozinc compound and the diborane being introduced in an amount of about one to four mole percent of the organozinc compound.
Claim 23
Dependent Claim
120 words
A process for depositing a zinc oxide film containing boron on a substrate, which comprises introducing: (a) an organozinc compound vapor selected from the group consisting of dimethylzinc and diethylzinc, (b) water vapor, (c) diborane and (d) an inert carrier gas into a chamber containing a substrate heated to a temperature of up to about 200° C. to deposit a zinc oxide film having a resistivity of less than about 2.5×10 -3 ohm-centimeter on the substrate in the absence of plasma-enhanced deposition, the water being introduced in a proportion of about one to three moles per mole of the organozinc compound and the diborane being introduced in an amount of about one to four mole percent of the organozinc compound.
Claim 24
Dependent Claim
68 words
A zinc oxide film having a resistivity of less than 2.5×10 -3 ohm-centimeter and which is characterized by having been deposited on a substrate by the introduction of an organozinc compound vapor, water vapor and an inert carrier gas into a chamber containing a substrate heated to a temperature of up to about 200° C. to deposit the film on the substrate in the absence of plasma-enhanced deposition.
Claim 25
Dependent Claim
68 words
A zinc oxide film having a resistivity of less than 2.5×10 -3 ohm-centimeter and which is characterized by having been deposited on a substrate by the introduction of an organozinc compound vapor, water vapor and an inert carrier gas into a chamber containing a substrate heated to a temperature of up to about 200° C. to deposit the film on the substrate in the absence of plasma-enhanced deposition.
Claim 26
Dependent Claim
21 words
The film of claim 20 wherein the organozinc compound has the formula R 2 Zn, with R being an alkyl radical.
Claim 27
Dependent Claim
11 words
The film of claim 20 wherein the organozinc compount is dimethylzinc.
Claim 28
Dependent Claim
11 words
The film of claim 20 wherein the organozinc compound is diethylzinc.
Claim 29
Dependent Claim
23 words
The film coated substrate of claim 20, 21, 22 or 23 wherein the film has a thickness of up to about 2 microns.
Claim 30
Dependent Claim
122 words
A zinc oxide film having a resistivity of less than 2.5×10 -3 ohm-centimeter and a thickness of up to 2 microns, and which is characterized by having been deposited on a substrate by the introduction of: (a) an organozinc compound vapor selected from the group consisting of dimethylzinc and diethylzinc, (b) water vapor, (c) diborane and (d) an inert carrier gas into a chamber containing the substrate heated to a temperature of up to about 200° C. in the absence of plasma-enhanced deposition, the water vapor being introduced in a proportion of about one to three moles per mole of the organozinc compound and the diborance being introduced in an amount of about one to four mole percent of the organozinc compound.
Claim 31
Dependent Claim
122 words
A zinc oxide film having a resistivity of less than 2.5×10 -3 ohm-centimeter and a thickness of up to 2 microns, and which is characterized by having been deposited on a substrate by the introduction of: (a) an organozinc compound vapor selected from the group consisting of dimethylzinc and diethylzinc, (b) water vapor, (c) diborane and (d) an inert carrier gas into a chamber containing the substrate heated to a temperature of up to about 200° C. in the absence of plasma-enhanced deposition, the water vapor being introduced in a proportion of about one to three moles per mole of the organozinc compound and the diborance being introduced in an amount of about one to four mole percent of the organozinc compound.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-06-14 | 1991-12-14 | 1992-06-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-06-14 | 1995-12-14 | 1996-06-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-06-14 | 1999-12-14 | 2000-06-14 | $7700.00 | Window Closed / Lapsed |