Abstract A film of an insulating compound is formed by evaporating constituent elements from sources screened by a baffle from the substrate while maintaining the substrate at a temperature at which individual elements will not deposit. II-VI, III-V and other compounds are so formed including compounds such as oxides. The film is stoichiometric and highly oriented when formed on a suitable substrate. Metal oxides, including those of zinc, silicon, magnesium, beryllium, titanium, zirconium and binary oxides such as lithium-gallium oxide, are formed with a low substrate temperature (at least -75* C.). Piezoelectric transducers, as well as other devices, may be so formed in highly oriented films of which zinc oxide offers the highest known electromechanical coupling coefficient.
The subject matter of claim 1 wherein: said element is zinc.
Claim 2
Dependent Claim
27 words
The subject matter of claim 1 wherein: said element is silicon and said substrate temperature is in the range of from about -100* to about -175* C.
Claim 3
Dependent Claim
30 words
The subject matter of claim 1 wherein: said substrate is a body of crystalline material and has, a clean surface on which said film is deposited with a crystalline orientation.
Claim 4
Dependent Claim
41 words
The subject matter of claim 1 wherein: said atmosphere including oxygen and evaporated material of said at least one element is at a pressure in the range of from about 5 X 10 4 to about 5 X 10 5 Torr.
Claim 5
Dependent Claim
56 words
The subject matter of claim 6: said pressure is, prior to deposition, pumped down to at least 10 7 Torr, oxygen is supplied to raise the pressure to said range; said at least one element is vaporized; additional oxygen is supplied to restore any pressure drop resulting from metal vaporization, and film deposition is then begun.