US5844771A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Capacitor construction
Assignee: Micron Technology Inc
•
Filing: 1997-08-15
•
Granted: 1998-12-01
•
Expires: 2017-08-15
Abstract
Abstract A capacitor is described which includes an inner capacitor plate having at least one sidewall; an oxidation barrier layer positioned in covering relation relative to the at least one sidewall; a capacitor dielectric plate positioned over the inner capacitor plate; and an outer capacitor plate positioned over the capacitor dielectric plate. In the preferred form of the invention, an insulating dielectric layer is positioned on the oxidation barrier layer, the insulating dielectric layer being of a different composition than the oxidation barrier layer.
Inventors
- 👤 Thomas M. Graettinger
- 👤 Paul J. Schuele
- 👤 Brent McClure
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 18:03
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10P; H10P14/00; H10P14/40
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
185 words
A capacitor construction comprising: an electrical node; an insulative material over the node and having an upper surface; a conductive pedestal extending through the insulative material and to the node; an inner capacitor electrode layer over the conductive pedestal and in electrical contact with the conductive pedestal, the inner capacitor electrode having at least one vertically extending sidewall, the inner capacitor electrode covering a portion of the insulative material upper surface and leaving an other portion uncovered; an oxidation barrier layer, the oxidation barrier layer comprising a first segment extending vertically along the sidewall and comprising a second segment extending horizontally along and over said uncovered other portion of the insulative material upper surface; an oxide layer over the horizontally extending second segment of the oxidation barrier layer; a capacitor dielectric layer extending over the inner capacitor electrode, and extending over both the first and second segments of the oxidation barrier layer, the capacitor dielectric layer being separated from the horizontally extending second segment of the oxidation barrier layer by the oxide layer; and an outer capacitor electrode layer extending over the capacitor dielectric layer.
Claim 2
Dependent Claim
185 words
A capacitor construction comprising: an electrical node; an insulative material over the node and having an upper surface; a conductive pedestal extending through the insulative material and to the node; an inner capacitor electrode layer over the conductive pedestal and in electrical contact with the conductive pedestal, the inner capacitor electrode having at least one vertically extending sidewall, the inner capacitor electrode covering a portion of the insulative material upper surface and leaving an other portion uncovered; an oxidation barrier layer, the oxidation barrier layer comprising a first segment extending vertically along the sidewall and comprising a second segment extending horizontally along and over said uncovered other portion of the insulative material upper surface; an oxide layer over the horizontally extending second segment of the oxidation barrier layer; a capacitor dielectric layer extending over the inner capacitor electrode, and extending over both the first and second segments of the oxidation barrier layer, the capacitor dielectric layer being separated from the horizontally extending second segment of the oxidation barrier layer by the oxide layer; and an outer capacitor electrode layer extending over the capacitor dielectric layer.
Claim 3
Dependent Claim
21 words
The capacitor construction of claim 1 wherein the oxidation barrier layer comprises silicon nitride and the capacitor dielectric layer comprises oxide.
Claim 4
Dependent Claim
22 words
The capacitor construction of claim 1 wherein the oxide layer physically contacts both the oxidation barrier layer and the capacitor dielectric layer.
References Cited (Backward Citations)
US4464701A
Cited
US5262343A
Cited
US5349494A
Cited
US5279985A
Cited
US5444011A
Cited
US5401680A
Cited
US5641702A
Cited
US5440157A
Cited
US5438012A
Cited
US5486713A
Cited
US5335138A
Cited
US5471364A
Cited
US5442213A
Cited
US5452178A
Cited
US5330931A
Cited
US5492854A
Cited
US5489548A
Cited
US5504041A
Cited
US5621606A
Cited
US5567636A
Cited
US5637527A
Cited
US5717236A
Cited
US5654222A
Cited
US5663088A
Cited
US5786248A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-11-30 | 2002-06-01 | 2002-12-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-11-30 | 2006-06-01 | 2006-12-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-11-30 | 2010-06-01 | 2010-12-01 | $7700.00 | Window Closed / Lapsed |