Semiconductor device having a capacitor

Claim 2

A semiconductor device comprising: a semiconductor substrate; an insulating film covering said semiconductor substrate; first and second conductive layers formed on said insulating film apart from each other thereby forming respective sidewalls facing each other, each of said first and second conductive layers including a film made of metal whose oxide has an electrical conductivity; a first dielectric film formed on said first conductive layer with a substantially same pattern as said first conductive layer; a second dielectric film formed on said second conductive layer with a substantially same pattern as said second conductive layer, said first and second dielectric films thereby having top surfaces and respective sidewalls, the sidewalls facing each other, and each of said first and second dielectric films having a first dielectric constant; a third dielectric film having a second dielectric constant that is smaller than said first dielectric constant and filling a space between said first and second conductive layers in contact with the sidewalls of said first and second conductive layers and further with the sidewalls of said first and second dielectric films, wherein said third dielectric film does not cover said top surfaces of said first and second dielectric films; and a third conductive layer formed continuously to cover said first, second and third dielectric films in contact respectively with said first, second and third dielectric films, wherein said first conductive layer, said first dielectric film and a part of said third conductive layer constitutes a first capacitor, and said second conductive layer, said second dielectric film and another part of said third conductive layer constitutes a second capacitor which has one electrode connected in common to one electrode of said first capacitor through said third conductive layer.

Claim 3

A semiconductor device as claimed in claim 1, wherein each of said first and second conductive layers is of a double-layered structure of said metal film and tantalum film, and each of said first and second dielectric films is formed on said tantalum film of an associated one of said first and second conductive films.

Claim 4

A semiconductor device as claimed in claim 2, wherein said oxide of said metal film is formed on the sidewall of said metal film, and constitutes a part of an associated one of said first and second conductive films together with said tantalum film.

Claim 5

A semiconductor device as claimed in claim 1, wherein each of said first and second conductive layers is of a double-layered structure of said metal film and the oxide of said metal film, and each of said first and second dielectric films of an associated one of said first and second conductive films is formed on the oxide of said metal film.

Claim 6

A semiconductor device as claimed in claim 1, wherein resistivity of said oxide of said metal film is less than 10 -3 Ω.cm.

Claim 7

A semiconductor device as claimed in claim 1, wherein said metal film is a film of metal selected from the group consisting of Mo, Tc, Ru, W, Re, Os, Ir and Pt.

Claim 8

A semiconductor device comprising: a semiconductor substrate; first and second regions selectively formed in said semiconductor substrate apart from each other; an insulating film covering said semiconductor substrate including said first and second regions therein; first and second contact holes selectively formed in said insulating film to expose a part of said first region and a part of said second region; a first conductive layer formed in contact with said part of said first region through said first contact hole and elongated over said insulating film; a second conductive layer formed in contact with said part of said second region through said second contact hole and elongated over said insulating film in isolation by a space from said first conductive layer, thereby forming respective sidewalls, each of said first and second conductive layers including a metal layer and a conductive oxide layer of said metal layer formed on said metal layer; a first dielectric film formed in contact with and with a substantially same pattern as said oxide layer of said first conductive layer; a second dielectric film formed in contact with and with a substantially same pattern as said oxide film of said second conductive layer, each of said first and second dielectric films having a first dielectric constant and top surfaces; a third dielectric film having a second dielectric constant that is smaller than said first dielectric constant and filling said space between said first and second conductive layers in contact with said respective sidewalls of said first and second conductive layers and said first and second dielectric films, wherein said third dielectric film does not cover the top surfaces of said first and second dielectric films; and a third conductive layer formed continuously on said first, second and third dielectric films in contact therewith and in isolation from said first and second conductive layers by said first, second and third dielectric films.

Claim 9

A semiconductor device comprising: a semiconductor substrate; first and second regions selectively formed in said semiconductor substrate apart from each other; an insulating film covering said semiconductor substrate including said first and second regions therein; first and second contact holes selectively formed in said insulating film to expose a part of said first region and a part of said second region; a first conductive layer formed in contact with said part of said first region through said first contact hole and elongated over said insulating film; a second conductive layer formed in contact with said part of said second region through said second contact hole and elongated over said insulating film in isolation by a space from said first conductive layer, thereby forming respective sidewalls, each of said first and second conductive layers including a metal layer and a conductive oxide layer of said metal layer formed on said metal layer; a first dielectric film formed in contact with and with a substantially same pattern as said oxide layer of said first conductive layer; a second dielectric film formed in contact with and with a substantially same pattern as said oxide film of said second conductive layer, each of said first and second dielectric films having a first dielectric constant and top surfaces; a third dielectric film having a second dielectric constant that is smaller than said first dielectric constant and filling said space between said first and second conductive layers in contact with said respective sidewalls of said first and second conductive layers and said first and second dielectric films, wherein said third dielectric film does not cover the top surfaces of said first and second dielectric films; and a third conductive layer formed continuously on said first, second and third dielectric films in contact therewith and in isolation from said first and second conductive layers by said first, second and third dielectric films.

Claim 10

The device as claimed in claim 7, wherein said first and second conductive layers further have a polysilicon layer filling said first and second contact holes thereby being in contact with said metal layer and one of said first and second regions.

Claim 11

The device as claimed in claim 8, wherein said metal layer is made of a metal selected from a group consisting of Mo, Tc, Ru, W, Re, Os, Ir and Pt, and said first and second dielectric film is made of tantalum oxide.