US5637527A
Expired / Lapsed
US
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Method of forming a charge-storage electrode of semiconductor device
Assignee: SK Hynix Inc
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Filing: 1996-04-04
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Granted: 1997-06-10
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Expires: 2016-04-04
Abstract
Abstract This invention discloses a method of forming a charge-storage electrode of a semiconductor device by forming a platinum film at a side wall and top area of a polysilicon charge-storage electrode, in which the platinum film restrains a leakage current through a high dielectric film at the same time the capacitance can be increased.
Inventors
- 👤 Yong K. Baek
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 13:15
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
163 words
A method of forming a charge-storage electrode of a semiconductor device, comprising the steps of: forming an insulating film on a silicon substrate having a junction region; etching said insulating film so that said junction region is exposed to form a contact hole; sequentially depositing a polysilicon film, a first barrier metal film, and a first platinum film on the resulting structure after forming said contact hole; consecutively patterning a portion of said first platinum film, said first barrier metal film, and said polysilicon film; sequentially depositing a second barrier metal film and a second platinum film on the resulting structure after the patterning process; sequentially blanket etching said second platinum film and said second barrier metal film to leave a spacer at the sidewall of said polysilicon film; and etching the exposed area of said second barrier metal film, thereby forming a groove at both side wails of said first platinum film and under a spacer of said second second platinum film.
Claim 2
Independent Claim
163 words
A method of forming a charge-storage electrode of a semiconductor device, comprising the steps of: forming an insulating film on a silicon substrate having a junction region; etching said insulating film so that said junction region is exposed to form a contact hole; sequentially depositing a polysilicon film, a first barrier metal film, and a first platinum film on the resulting structure after forming said contact hole; consecutively patterning a portion of said first platinum film, said first barrier metal film, and said polysilicon film; sequentially depositing a second barrier metal film and a second platinum film on the resulting structure after the patterning process; sequentially blanket etching said second platinum film and said second barrier metal film to leave a spacer at the sidewall of said polysilicon film; and etching the exposed area of said second barrier metal film, thereby forming a groove at both side wails of said first platinum film and under a spacer of said second second platinum film.
Claim 3
Dependent Claim
13 words
The method of claim 1, wherein said polysilicon film is in-situ phosphorus doped.
Claim 4
Dependent Claim
21 words
The method of claim 1, wherein said first barrier metal film is formed at least one material of titanium and tantalum.
Claim 5
Dependent Claim
21 words
The method of claim 1, wherein said second barrier metal film is formed at least one material of titanium and tantalum.
Claim 6
Dependent Claim
20 words
The method of claim 1, wherein the exposed area of said second barrier metal film is etched using acidic solution.
Claim 7
Dependent Claim
20 words
The method of claim 1, wherein the exposed area of said second barrier metal film is etched using basic solution.
Claim 8
Dependent Claim
18 words
The method of claim 1, further comprising argon sputtering being performed before depositing said second barrier metal film.
Claim 9
Dependent Claim
23 words
The method of claim 1, wherein said second barrier metal film is etched of thickness of about 500 Å in said blanket etching.
Claim 10
Dependent Claim
23 words
The method of claim 1, wherein said first and said second barrier metal films are deposited of thickness of 100 through 300 Å.
Claim 11
Independent Claim
129 words
A method of forming a charge-storage electrode of a semiconductor device, comprising the steps of: forming an insulating film on a silicon substrate having a junction region; etching said insulating film so that said junction region is exposed to form a contact hole; sequentially depositing a polysilicon film, a first barrier metal film, and a first platinum film on the resulting structure after forming said contact hole; consecutively patterning a portion of said first platinum film, said first barrier metal film, and said polysilicon film; sequentially depositing a second barrier metal film and a second platinum film on the resulting structure after the patterning process; sequentially blanket etching said second platinum film so that a spacer is formed; and etching the exposed area of said second barrier metal film.
Claim 12
Independent Claim
129 words
A method of forming a charge-storage electrode of a semiconductor device, comprising the steps of: forming an insulating film on a silicon substrate having a junction region; etching said insulating film so that said junction region is exposed to form a contact hole; sequentially depositing a polysilicon film, a first barrier metal film, and a first platinum film on the resulting structure after forming said contact hole; consecutively patterning a portion of said first platinum film, said first barrier metal film, and said polysilicon film; sequentially depositing a second barrier metal film and a second platinum film on the resulting structure after the patterning process; sequentially blanket etching said second platinum film so that a spacer is formed; and etching the exposed area of said second barrier metal film.
Claim 13
Dependent Claim
13 words
The method of claim 10, wherein said polysilicon film is in-situ phosphorus doped.
Claim 14
Dependent Claim
21 words
The method of claim 10, wherein said first barrier metal film is formed at least one material of titanium and tantalum.
Claim 15
Dependent Claim
21 words
The method of claim 10, wherein said second barrier metal film is formed at least one material of titanium and tantalum.
Claim 16
Dependent Claim
20 words
The method of claim 10, wherein the exposed area of said second barrier metal film is etched using acidic solution.
Claim 17
Dependent Claim
20 words
The method of claim 10, wherein the exposed area of said second barrier metal film is etched using basic solution.
Claim 18
Dependent Claim
18 words
The method of claim 10, further comprising argon sputtering being performed before depositing said second barrier metal film.
Claim 19
Dependent Claim
23 words
The method of claim 10, wherein said second barrier metal film is etched of thickness of about 500 Å in said blanket etching.
Claim 20
Dependent Claim
23 words
The method of claim 10, wherein said first and said second barrier metal films are deposited of thickness of 100 through 300 Å.
References Cited (Backward Citations)
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