Patent US6842782B1 successfully refreshed from Google Patents.
US4891682A
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US
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Solid state image pick-up device having a number of static induction transistor image sensors
Assignee: NISHIZAWA JUN-ICHI NO 6-16 1-CHOME KOMEGAFUKURO SENDAI CITY MIYAGI PREF
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Filing: 1983-12-01
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Granted: 1990-01-02
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Expires: 2003-12-01
Abstract
Abstract A solid state image pick-up device having a number of static induction transistor image sensors arranged in a matrix form, each static induction image sensor includes a drain region formed by an n+ substrate connected to the earth potential, a channel region formed by an n - epitaxial layer grown on the substrate, a ring-shaped p+ gate region formed in a surface of the epitaxial layer, an n+ source region formed in a part of the surface of the epitaxial layer surrounded by the ring-shaped gate region and a p+ overflow drain region formed in the surface of the substrate underneath the gate region. By adjusting a time duration of a shutter control signal having a positive voltage applied to the overflow drain region, a time period during which photocarriers, i.e. electrons are flown into the gate region and stored therein, can be controlled at will, and an electronic shutter function can be achieved.
Inventors
- 👤 Atsushi Yusa
- 👤 Hidetoshi Yamada
- 👤 Takashi Mizusaki
- 👤 Jun-ichi Nishizawa
- 👤 Takashige Tamamushi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 09:33
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/196; H04; H04N; H04N25/00; H04N25/70; H04N25/76
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
189 words
In a solid state image pick-up device comprising a plurality of static induction transistors each transistor having a source region of one conductivity type, a drain region of one conductivity type separated from said source region by means of a channel region of one conductivity type and a gate region of a second conductivity type separated from at least one of said source and drain regions by means of said channel region, said channel region capable of generating photocarriers with light input; and means for driving said static induction transistors selectively to derive an image signal; each static induction transistor further comprising an overflow drain region of a second conductivity type separated from said gate region by means of said channel region, said overflow drain region having a potential, said overflow drain region being formed below said gate region and immediately adjacent said channel region; and said pick-up device further comprising means for externally controlling said potential of said overflow drain region to adjust a time period which photocarries induced in said channel region due to light input are stored in said gate region to effect a shutter function.
Claim 2
Dependent Claim
189 words
In a solid state image pick-up device comprising a plurality of static induction transistors each transistor having a source region of one conductivity type, a drain region of one conductivity type separated from said source region by means of a channel region of one conductivity type and a gate region of a second conductivity type separated from at least one of said source and drain regions by means of said channel region, said channel region capable of generating photocarriers with light input; and means for driving said static induction transistors selectively to derive an image signal; each static induction transistor further comprising an overflow drain region of a second conductivity type separated from said gate region by means of said channel region, said overflow drain region having a potential, said overflow drain region being formed below said gate region and immediately adjacent said channel region; and said pick-up device further comprising means for externally controlling said potential of said overflow drain region to adjust a time period which photocarries induced in said channel region due to light input are stored in said gate region to effect a shutter function.
Claim 3
Dependent Claim
56 words
A solid state image pick-up device according to claim 1, wherein said drain region being formed by a semiconductor substrate, said source, channel and gate regions being formed in an active layer applied on a surface of said substrate, and said overflow drain region being formed by a region buried in said surface of said substrate.
Claim 4
Dependent Claim
95 words
A solid state image pick-up device according to claim 2, wherein said drain region being formed by an n+ substrate, said active layer being formed by an n - epitaxial layer grown on a surface of the n+ substrate, said gate region comprises a ring-shaped p+ region formed in a surface of said epitaxial layer, said source region comprises an n+ region formed in a part of said epitaxial layer surrounded by said ring-shaped gate region, and said overflow drain region being formed by a p+ region buried in said surface of said n+ substrate.
Claim 5
Dependent Claim
40 words
A solid state image pick-up device according to claim 3, wherein adjacent static induction transistors are isolated from each other by means of an isolation region extending from said surface of said epitaxial layer to said surface of said substrate.
Claim 6
Dependent Claim
19 words
A solid state image pick-up device according to claim 1, wherein said gate region completely surrounds said source region.
Claim 7
Dependent Claim
20 words
A solid state image pick-up device according to claim 5, wherein said gate region is separated from said source region.
Claim 8
Dependent Claim
41 words
A solid state image pick-up device according to claim 1, wherein said static induction transistors being arranged in a matrix form and said overflow drain regions of said static induction transistors aligned in a vertical direction are connected to each other.
Claim 9
Dependent Claim
41 words
A solid state image pick-up device according to claim 1, wherein said static induction transistors being arranged in a matrix form and said overflow drain regions of said static induction transistors aligned in a horizontal direction being connected to each other.
Claim 10
Dependent Claim
40 words
A solid state image pick-up device according to claim 1, wherein said overflow drain regions of all of said static induction transistors are connected to each other and the potential of all of said overflow drain regions being controlled simultaneously.
Claim 11
Dependent Claim
100 words
A solid state image pick-up device according to claim 9, wherein said overflow drain region being formed by a p+ substrate, said active layer being formed by an n - epitaxial layer grown on a surface of said p+ substrate, said gate region comprises a ring-shaped p+ region formed in a surface of said epitaxial layer, said source region comprises an n+ region formed in a part of said epitaxial layer surrounded by said ring-shaped p+ gate region, and said drain region being formed by an n+ region buried in said surface of said substrate underneath said n+ source region.
Claim 12
Dependent Claim
40 words
A solid state image pick-up device according to claim 10, wherein adjacent static induction transistors are isolated from each other by means of an isolation region extending from said surface of said epitaxial layer to said surface of said substrate.
Claim 13
Dependent Claim
82 words
A solid state image pick-up device according to claim 1, wherein said overflow drain regions of all of said static induction transistors being formed by a semiconductor substrate, said source, gate and channel regions being formed in an active layer applied on a surface of said substrate and said drain region being formed by a region buried in said surface of said substrate, whereby the potential of the overflow drain regions being simultaneously adjusted by changing the potential applied to the substrate.
Claim 14
Dependent Claim
19 words
A solid state image pick-up device according to claim 12, wherein said gate region completely surrounds said source region.
Claim 15
Dependent Claim
20 words
A solid state image pick-up device according to claim 13, wherein said gate region is separated from said source region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-01-01 | 1993-07-03 | 1994-01-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-01-01 | 1997-07-03 | 1998-01-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-01-01 | 2001-07-03 | 2002-01-02 | $7700.00 | Window Closed / Lapsed |