EP0096725A1
Expired / Lapsed
EP
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Semiconductor image pick-up device
Assignee: NISHIZAWA, JUN-ICHI
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Filing: 1982-12-16
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Granted: —
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Expires: 2002-12-16
Abstract
Abstract This invention has as its object the provision of a semiconductor image pickup device in which photocells are arranged in a matrix shape, micro-miniaturization and a high degree of integration are enabled, and the light amplification factor and the operating speed are improved. Thus each of the photocells is composed of a static induction transistor having a pair of main electrodes, a channel region between the electrodes, and a capacitor connected between the control region operating as the photocell and a row line.
Inventors
- 👤 Junichi Nishizawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 11:23
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/196; H04; H04N; H04N25/00; H04N25/70; H04N25/76
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
179 words
(1) A semiconductor image sensor which is characterized in that a matrix is formed by a plurality of row lines and a plurality of column lines; at each intersection of the matrix, a static induction transistor type photo cell is provided which has the one main electrode connected to one of the column lines, the other main electrode connected in common to the other main electrodes of the other static induction transistor photo cells, a channel region disposed between the main electrodes and a capacitor connected between a control region serving as a photo cell and one of the row lines; the one main electrode of a switching transistor is connected to one of the column lines; the other main electrode of the switching transistor is connected in common to switching transistors of each column line and connected via a load resistor to a power source; the gate or base of each switching transistor is connected to a video line selecting circuit; and the gate of each photo cell is connected via the capacitor to a read address circuit.
Claim 2
Dependent Claim
43 words
(2) A semiconductor image sensor according to claim 1, characterized in that the matrix of the static induction type photo cells, the switching transistors, the video line selecting circuit, the read address circuit and the load resistors are integrated on a single substrate.
Claim 3
Dependent Claim
36 words
(3) A semiconductor image sensor according to claim 1, charaxterized in that the video line selecting circuit and the read address circuit are each formed by a shift register and are integrated on the same substrate.
References Cited (Backward Citations)
No citation records indexed.
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