US5837593A
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Methods of fabricating microelectronic capacitors having tantalum pentoxide dielectrics
Assignee: Samsung Electronics Co Ltd
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Filing: 1996-09-03
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Granted: 1998-11-17
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Expires: 2016-09-03
Abstract
Abstract A microelectronic capacitor is formed by forming a first tantalum pentoxide film on a conductive electrode and annealing the first tantalum pentoxide film in the presence of ultraviolet radiation and ozone. The forming step and annealing step are then repeated at least once to form at least a second tantalum pentoxide film which has been annealed in the presence of ultraviolet radiation, on the first tantalum pentoxide film. A second conductive electrode may then be formed on the tantalum pentoxide layer. The resultant tantalum pentoxide layer can have a thickness which exceeds 45 Å, yet has a reduced leakage current by filling the oxygen vacancies across the thickness thereof.
Inventors
- 👤 In-sung Park
- 👤 Eui-Song Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 16:26
CPC Classifications
H; H10; H10D; H10D84/00; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6536; H10P14/6538; H10P14/66; H10P14/662; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6338; H10P14/6342; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
76 words
A method of fabricating a microelectronic capacitor comprising the steps of: forming a first tantalum pentoxide film on a conductive electrode on a microelectronic substrate; annealing the first tantalum pentoxide film in the presence of ultraviolet radiation and ozone; and repeating said forming step and said annealing step at least once to form at least a second tantalum pentoxide film which has been annealed in the presence of ultraviolet radiation, on the first tantalum pentoxide film.
Claim 2
Independent Claim
76 words
A method of fabricating a microelectronic capacitor comprising the steps of: forming a first tantalum pentoxide film on a conductive electrode on a microelectronic substrate; annealing the first tantalum pentoxide film in the presence of ultraviolet radiation and ozone; and repeating said forming step and said annealing step at least once to form at least a second tantalum pentoxide film which has been annealed in the presence of ultraviolet radiation, on the first tantalum pentoxide film.
Claim 3
Dependent Claim
23 words
A method according to claim 1 wherein said annealing step is performed at temperatures of between about 200° C. and about 400° C.
Claim 4
Dependent Claim
24 words
A method according to claim 2 wherein said annealing step is performed for times which are between about 1 minute and about 60 minutes.
Claim 5
Dependent Claim
29 words
A method according to claim 1 wherein said repeating step is performed to form a tantalum pentoxide layer of total thickness between about 10 Å and about 500 Å.
Claim 6
Dependent Claim
26 words
A method according to claim 1 wherein said repeating step is performed to form a tantalum pentoxide layer of total thickness of at least 85 Å.
Claim 7
Dependent Claim
44 words
A method according to claim 1 wherein said repeating step is followed by the step of: annealing in dry oxygen at temperatures of between about 600° C. and about 800° C. and for a time of between about 10 minutes and about 60 minutes.
Claim 8
Dependent Claim
30 words
A method according to claim 1 wherein said repeating step is followed by the step of: forming a second conductive electrode on the at least a second tantalum pentoxide film.
Claim 9
Dependent Claim
34 words
A method according to claim 6 wherein said step of annealing in dry oxygen is followed by the step of: forming a second conductive electrode on the at least a second tantalum pentoxide film.
Claim 10
Independent Claim
69 words
A method of manufacturing a tantalum pentoxide layer comprising the steps of: forming a first tantalum pentoxide film; annealing the first tantalum pentoxide film in the presence of ultraviolet radiation and ozone; and repeating said forming step and said annealing step at least once to form at least a second tantalum pentoxide film which has been annealed in the presence of ultraviolet radiation, on the first tantalum pentoxide film.
Claim 11
Independent Claim
69 words
A method of manufacturing a tantalum pentoxide layer comprising the steps of: forming a first tantalum pentoxide film; annealing the first tantalum pentoxide film in the presence of ultraviolet radiation and ozone; and repeating said forming step and said annealing step at least once to form at least a second tantalum pentoxide film which has been annealed in the presence of ultraviolet radiation, on the first tantalum pentoxide film.
Claim 12
Dependent Claim
23 words
A method according to claim 9 wherein said annealing step is performed at temperatures of between about 200° C. and about 400° C.
Claim 13
Dependent Claim
24 words
A method according to claim 9 wherein said annealing step is performed for times which are between about 1 minute and about 60 minutes.
Claim 14
Dependent Claim
29 words
A method according to claim 9 wherein said repeating step is performed to form a tantalum pentoxide layer of total thickness between about 10 Å and about 500 Å.
Claim 15
Dependent Claim
26 words
A method according to claim 9 wherein said repeating step is performed to form a tantalum pentoxide layer of total thickness of at least 85 Å.
Claim 16
Dependent Claim
44 words
A method according to claim 9 wherein said repeating step is followed by the step of: annealing in dry oxygen at temperatures of between about 600° C. and about 800° C. and for a time of between about 10 minutes and about 60 minutes.
References Cited (Backward Citations)
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