§
Luxuse
Patent Intelligence
Sign In
← Back to Patent Explorer
US6787916B2 Expired / Lapsed US ⏱️ 0.0 years remaining

Structures having a substrate with a cavity and having an integrated circuit bonded to a contact pad located in the cavity

Assignee: Allvia Inc
•
Filing: 2001-09-13
•
Granted: 2004-09-07
•
Expires: 2021-09-13
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract Semiconductor dies are bonded to contact pads formed in a substrate's cavity. Vias through the substrate open into the cavity. Conductive lines passing through the vias connect the contact pads in the cavity to contact pads on another side of the substrate. A passage in the substrate opens into the cavity and provides an escape or pressure relief path for material filling the cavity. The passage can also be used to introduce material into the cavity.

Inventors

  • 👤 Patrick B. Halahan

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 11:21
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W20/00; H10W20/01; H10W20/021; H10W20/023; H10W20/0245; H10W20/20; H10W90/00; H10W70/682; H10W72/00; H10W72/071; H10W72/072; H10W72/07251; H10W72/075; H10W72/20; H10W72/50; H10W72/551; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/951; H10W90/20; H10W90/22; H10W90/297; H10W90/701; H10W90/721; H10W90/724; H10W90/731; H10W90/732; H10W90/734; H10W90/751; H10W90/754

Claims Analysis

Total Claims: 20
Claim 1
Independent Claim 235 words
A structure comprising: a member comprising: a first semiconductor substrate having a first side and a second side, having a cavity in the first side; one or more vias each of which passes through the first substrate and opens into the cavity; one or more first contact pads in the cavity on a surface of said member, and one or more second contact pads on the second side; circuitry for coupling at least one first contact pad to at least one second contact pad, the circuitry comprising one or more conductive interconnects passing through the one or more vias, wherein each interconnect comprises a conductive layer deposited over a sidewall of at least one of the vias; the structure further comprising: one or more first semiconductor integrated circuit dies, wherein each first die has a contact pad bonded to one of the first contact pads so as to adhere to the one of the first contact pads; and one or more integrated circuit dies attached to the second side of the first substrate and having a contact pad that is either (i) bonded to one of the second contact pads to adhere to the one of the second contact pads or (ii) connected to one of the second contact pads with a discrete wire; a wiring substrate attached to the first substrate, the first substrate and the wiring substrate at least partially enclosing the cavity.
Claim 2
Dependent Claim 235 words
A structure comprising: a member comprising: a first semiconductor substrate having a first side and a second side, having a cavity in the first side; one or more vias each of which passes through the first substrate and opens into the cavity; one or more first contact pads in the cavity on a surface of said member, and one or more second contact pads on the second side; circuitry for coupling at least one first contact pad to at least one second contact pad, the circuitry comprising one or more conductive interconnects passing through the one or more vias, wherein each interconnect comprises a conductive layer deposited over a sidewall of at least one of the vias; the structure further comprising: one or more first semiconductor integrated circuit dies, wherein each first die has a contact pad bonded to one of the first contact pads so as to adhere to the one of the first contact pads; and one or more integrated circuit dies attached to the second side of the first substrate and having a contact pad that is either (i) bonded to one of the second contact pads to adhere to the one of the second contact pads or (ii) connected to one of the second contact pads with a discrete wire; a wiring substrate attached to the first substrate, the first substrate and the wiring substrate at least partially enclosing the cavity.
Claim 3
Dependent Claim 24 words
The structure of claim 1 comprising a passage connecting the cavity to the first substrate's surface on a side other than the first side.
Claim 4
Dependent Claim 29 words
The structure of claim 2 wherein the passage is a groove formed in the first side of the first substrate, the groove being not as deep as the cavity.
Claim 5
Dependent Claim 20 words
The structure of claim 1 further comprising an integrated circuit attached to the wiring substrate and located in the cavity.
Claim 6
Dependent Claim 24 words
The structure of claim 1 wherein the member comprises an active device having a semiconductor region on the second side in the first substrate.
Claim 7
Dependent Claim 151 words
A structure comprising: a first substrate having a cavity in its first surface, the cavity having sidewalls, the sidewalls having one or more grooves formed therein, the grooves being formed in the first surface of the first substrate, each groove connecting the cavity to the first substrate's surface other than the first surface; one or more first contact pads in the cavity; one or more semiconductor integrated circuits each of which has a contact pad bonded to one of the first contact pads in the cavity so as to adhere to the one of the first contact pads; a wiring substrate attached to the first surface of the first substrate, the first substrate and the wiring substrate completely enclosing the cavity except for the one or more grooves; wherein the first substrate is a semiconductor substrate, the structure further comprising an active device having a semiconductor region in the first substrate.
Claim 8
Dependent Claim 151 words
A structure comprising: a first substrate having a cavity in its first surface, the cavity having sidewalls, the sidewalls having one or more grooves formed therein, the grooves being formed in the first surface of the first substrate, each groove connecting the cavity to the first substrate's surface other than the first surface; one or more first contact pads in the cavity; one or more semiconductor integrated circuits each of which has a contact pad bonded to one of the first contact pads in the cavity so as to adhere to the one of the first contact pads; a wiring substrate attached to the first surface of the first substrate, the first substrate and the wiring substrate completely enclosing the cavity except for the one or more grooves; wherein the first substrate is a semiconductor substrate, the structure further comprising an active device having a semiconductor region in the first substrate.
Claim 9
Dependent Claim 20 words
The structure of claim 6 further comprising an integrated circuit attached to the wiring substrate and located in the cavity.
Claim 10
Dependent Claim 22 words
The structure of claim 6 wherein each groove provides a pressure relief path, and/or an escape path, for material in the cavity.
Claim 11
Dependent Claim 17 words
The structure of claim 1 wherein the first substrate and the wiring substrate completely enclose the cavity.
Claim 12
Dependent Claim 45 words
The structure of claim 9 wherein one or more grooves are formed in the first side of the first substrate, each groove extending between the cavity and the first substrate's side other than the first side, the grooves being not as deep as the cavity.
Claim 13
Dependent Claim 23 words
The structure of claim 1 further comprising a discrete wire connecting a second contact pad to a contact pad on the wiring substrate.
Claim 14
Dependent Claim 27 words
The structure of claim 1 wherein at least one of the first contact pads is formed from the conductive layer protruding out of one of the vias.
Claim 15
Dependent Claim 15 words
The structure of claim 6 wherein the grooves are not as deep as the cavity.
Claim 16
Dependent Claim 68 words
The structure of claim 6 wherein the first substrate comprises a semiconductor substrate, wherein the cavity and the grooves are formed in the semiconductor substrate, wherein the structure has one or more vias each of which passes through the semiconductor substrate, and each first contact pad comprises a protruding portion of a conductive layer formed in one of the vias and protruding out of one of the vias.
Claim 17
Dependent Claim 201 words
A structure comprising a member comprising: a first semiconductor substrate having a first side and a second side, and having a cavity in the first side; one or more first contact pads in the cavity, and one or more second contact pads on the second side; circuitry for coupling at least one first contact pad to at least one second contact pad, the circuitry comprising one or more conductive interconnects passing through the first substrate and contacting the one or more first contact pads; the structure further comprising: one or more first semiconductor integrated circuit dies, wherein each first die has a contact pad bonded to one of the first contact pads so as to adhere to the one of the first contact pads; and one or more integrated circuit dies attached to the second side of the first substrate and having a contact pad that is either (i) bonded to one of the second contact pads to adhere to the one of the second contact pads or (ii) connected to one the second contact pads with a discrete wire; a wiring substrate attached to the first substrate, the first substrate and the wiring substrate at least partially enclosing the cavity.
Claim 18
Dependent Claim 201 words
A structure comprising a member comprising: a first semiconductor substrate having a first side and a second side, and having a cavity in the first side; one or more first contact pads in the cavity, and one or more second contact pads on the second side; circuitry for coupling at least one first contact pad to at least one second contact pad, the circuitry comprising one or more conductive interconnects passing through the first substrate and contacting the one or more first contact pads; the structure further comprising: one or more first semiconductor integrated circuit dies, wherein each first die has a contact pad bonded to one of the first contact pads so as to adhere to the one of the first contact pads; and one or more integrated circuit dies attached to the second side of the first substrate and having a contact pad that is either (i) bonded to one of the second contact pads to adhere to the one of the second contact pads or (ii) connected to one the second contact pads with a discrete wire; a wiring substrate attached to the first substrate, the first substrate and the wiring substrate at least partially enclosing the cavity.
Claim 19
Dependent Claim 65 words
The structure of claim 15 wherein: the one or more conductive lines comprise a conductive layer passing through a via that passes through the first semiconductor substrate; the structure comprises dielectric in the via, wherein the dielectric protrudes out of the first semiconductor substrate around the conductive layer, and the conductive layer protrudes out of the dielectric to provide one of the first contact pads.
Claim 20
Dependent Claim 20 words
The structure of claim 15 further comprising an integrated circuit attached to the wiring substrate and located in the cavity.

References Cited (Backward Citations)

US4139401A Cited
US3761782A Cited
US3739463A Cited
US3810129A Cited
US3811117A Cited
US3881884A Cited
US3991296A Cited
US3993917A Cited
US4141135A Cited
US4394712A Cited
US4467518A Cited
US4386106A Cited
US4463336A Cited
US4954458A Cited
US4603341A Cited
US4612083A Cited
US4617730A Cited
US4628174A Cited
US4722130A Cited
US4903120A Cited
US4807021A Cited
EP0238089A2 Cited
US4897708A Cited
US4769738A Cited
US4912548A Cited
US4842699A Cited
US5654127A Cited
US5225771A Cited
US5191405A Cited
US5463246A Cited
US4978639A Cited
US4996587A Cited
US5239198A Cited
US5160987A Cited
US5064771A Cited
US5241456A Cited
US5376825A Cited
US5071792A Cited
US5172303A Cited
US5166097A Cited
US5314844A Cited
US5229647A Cited
US5111278A Cited
US5403784A Cited
US5270261A Cited
US5426566A Cited
US5307942A Cited
US5468663A Cited
US5467305A Cited
US5259924A Cited
US5309318A Cited
US5414637A Cited
US5399898A Cited
US5489554A Cited
US5268326A Cited
US5323035A Cited
US5453404A Cited
US5313097A Cited
US5307240A Cited
US5322816A Cited
US6400573B1 Cited
US5291062A Cited
US5340771A Cited
US5494832A Cited
EP0698288B1 Cited
US5767001A Cited
US5846879A Cited
US6149190A Cited
US5478781A Cited
US5502667A Cited
US5561622A Cited
US5563086A Cited
US5475318A Cited
US5380681A Cited
US5578869A Cited
US5502333A Cited
US5979475A Cited
US5627106A Cited
US5504036A Cited
US5517754A Cited
US5472539A Cited
US6121119A Cited
US5472914A Cited
US5550942A Cited
US5629835A Cited
US5656553A Cited
US5596226A Cited
US5567653A Cited
US5532519A Cited
US5506753A Cited
US5567654A Cited
US5466634A Cited
US5517057A Cited
US5766975A Cited
EP0807964A1 Cited
US5843844A Cited
US5628917A Cited
US5761044A Cited
US6162701A Cited
US5646067A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2007-09-07 2008-03-08 2008-09-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2011-09-07 2012-03-08 2012-09-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2015-09-07 2016-03-08 2016-09-07 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag