US6162701A
Expired / Lapsed
US
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Semiconductor device and method for making same
Assignee: Hitachi Ltd
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Filing: 1999-04-12
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Granted: 2000-12-19
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Expires: 2019-04-12
Abstract
Abstract A semiconductor chip (105') and a substrate (102) are bonded with an organic adhesive layer (409) containing conductive particles (406), and a pad (405) and an electrode (412) are mutually, electrically connected through the conductive particles (406). The semiconductor chip (105') is formed by contacting a semiconductor wafer (105) attached to a tape (107) with an etchant while rotating the semiconductor wafer (105) within an in-plane direction at a high speed or reciprocating the wafer (105) laterally to uniformly etch the semiconductor wafer (105) thereby reducing the thickness thereof, and dicing the thus reduced wafer. The resultant thin chip (105') is hot-pressed by means of a heating head (106) for bonding on the substrate (102). In this way, a thin semiconductor chip can be formed stably at low costs and bonded on a substrate without causing any crack of the chip, thereby obtaining a semiconductor device which is unlikely to break owing to the bending stress from outside.
Inventors
- 👤 Mitsuo Usami
- 👤 Kunihiro Tsubosaki
- 👤 Kunihiko Nishi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 11:25
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/70; H10P72/74; H10P54/00; H10P72/7402; H10W; H10W72/00; H10W72/01; H10W72/013; H10P72/7412; H10P72/7414; H10P72/7416; H10P72/7428; H10P72/7432; H10W72/071; H10W72/073; H10W72/07331; H10W72/07337; H10W72/30; H10W72/321; H10W72/325; H10W72/351; H10W72/352; H10W72/353; H10W72/354
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
142 words
A method for fabricating a semiconductor device, comprising the steps of: providing a semiconductor wafer, a thickness of said semiconductor wafer having been reduced by removing material of the semiconductor wafer from a rear surface thereof, to provide a semiconductor wafer having a reduced thickness, said semiconductor wafer having a plurality of semiconductor elements on a surface thereof, a surface of the semiconductor wafer being covered by a first substrate; covering said rear surface of said semiconductor wafer having a reduced thickness with a second substrate; removing said first substrate from said semiconductor wafer having said second substrate; dividing said semiconductor wafer into plural chips having semiconductor elements thereon, by cutting completely through said semiconductor wafer; and fixing a chip, of the plural chips, to a third substrate facing to a surface of the chip on which a semiconductor element is disposed.
Claim 2
Independent Claim
142 words
A method for fabricating a semiconductor device, comprising the steps of: providing a semiconductor wafer, a thickness of said semiconductor wafer having been reduced by removing material of the semiconductor wafer from a rear surface thereof, to provide a semiconductor wafer having a reduced thickness, said semiconductor wafer having a plurality of semiconductor elements on a surface thereof, a surface of the semiconductor wafer being covered by a first substrate; covering said rear surface of said semiconductor wafer having a reduced thickness with a second substrate; removing said first substrate from said semiconductor wafer having said second substrate; dividing said semiconductor wafer into plural chips having semiconductor elements thereon, by cutting completely through said semiconductor wafer; and fixing a chip, of the plural chips, to a third substrate facing to a surface of the chip on which a semiconductor element is disposed.
Claim 3
Dependent Claim
18 words
A method for fabricating a semiconductor device according to claim 1, wherein said first substrate is a tape.
Claim 4
Dependent Claim
21 words
A method for fabricating a semiconductor device according to claim 2, wherein said tape is a tape containing an organic material.
Claim 5
Dependent Claim
19 words
A method for fabricating a semiconductor device according to claim 3, wherein said tape is supported by a frame.
Claim 6
Dependent Claim
18 words
A method for fabricating a semiconductor device according to claim 4, wherein said frame is a ring-shaped frame.
Claim 7
Dependent Claim
38 words
A method for fabricating a semiconductor device according to claim 1, wherein said step of fixing said chip to said third substrate is carried out by heating said chip selectively and pushing it out to said third substrate.
Claim 8
Dependent Claim
42 words
A method for fabricating a semiconductor device according to claim 1, wherein said step of fixing said chip to said third substrate is carried out by pressing upon and heating said chip by using a heating head disposed under said first substrate.
Claim 9
Dependent Claim
32 words
A method for fabricating a semiconductor device according to claim 1, wherein said chip is fixed to said third substrate with an adhesive layer formed on a surface of said third substrate.
Claim 10
Dependent Claim
21 words
A method for fabricating a semiconductor device according to claim 8, wherein said adhesive layer is an anisotropic electroconductive adhesive layer.
Claim 11
Dependent Claim
23 words
A method for fabricating a semiconductor device according to claim 9, wherein said anisotropic electroconductive adhesive layer contains organic material and conductive particles.
Claim 12
Dependent Claim
41 words
A method for fabricating a semiconductor device according to claim 1, wherein an electrode, formed on the surface of said chip, is electrically connected with an electrode formed on a surface of said third substrate by means of a face-down bonding.
Claim 13
Dependent Claim
18 words
A method for fabricating a semiconductor device according to claim 1, wherein said third substrate is a tape.
Claim 14
Dependent Claim
26 words
A method for fabricating a semiconductor device according to claim 1, wherein the reduced thickness of said semiconductor wafer is a thickness of 0.1 μm-110 μm.
Claim 15
Dependent Claim
60 words
A method for fabricating a semiconductor device according to claim 1, wherein a step of forming a passivation film having a first shape on the chip and a step of forming an electrode, having a thickness smaller than that of said passivation film, on the chip are carried cut before said step of fixing said chip to said third substrate.
Claim 16
Dependent Claim
39 words
A method for fabricating a semiconductor device according to claim 14, wherein said electrode is formed on a surface of the chip facing to said third substrate, and is not formed at locations where the passivation film is formed.
Claim 17
Dependent Claim
50 words
A method for fabricating a semiconductor device according to claim 1, wherein the semiconductor wafer has a first surface opposite the rear surface, and wherein the plurality of semiconductor elements are on said first surface of the semiconductor wafer, said first surface being the surface covered by the first substrate.
Claim 18
Independent Claim
174 words
A method for fabricating a semiconductor device, comprising the steps of: providing a first substrate, having a plurality of semiconductor elements on a first main surface thereof, said first substrate having a thickness which has been reduced by removing material of the first substrate from a second main surface thereof opposite the first main surface, to provide a first substrate with a reduced thickness of 0.1 μm to 110 μm, the first main surface being covered by a first tape; covering said second main surface of said first substrate, having a reduced thickness, with a second tape; removing said first tape from said first substrate having said second tape; dividing said first substrate having a reduced thickness into plural chips; facing said first main surface to wiring formed on a second substrate; and heating and fixing a chip, of said plural chips, to said second substrate such that outer terminals of semiconductor elements formed on said chip are electrically connected with said wiring formed on said second substrate through an anisotropic conductive adhesion layer.
Claim 19
Independent Claim
174 words
A method for fabricating a semiconductor device, comprising the steps of: providing a first substrate, having a plurality of semiconductor elements on a first main surface thereof, said first substrate having a thickness which has been reduced by removing material of the first substrate from a second main surface thereof opposite the first main surface, to provide a first substrate with a reduced thickness of 0.1 μm to 110 μm, the first main surface being covered by a first tape; covering said second main surface of said first substrate, having a reduced thickness, with a second tape; removing said first tape from said first substrate having said second tape; dividing said first substrate having a reduced thickness into plural chips; facing said first main surface to wiring formed on a second substrate; and heating and fixing a chip, of said plural chips, to said second substrate such that outer terminals of semiconductor elements formed on said chip are electrically connected with said wiring formed on said second substrate through an anisotropic conductive adhesion layer.
Claim 20
Dependent Claim
36 words
A method for fabricating a semiconductor device according to claim 17, wherein said step of dividing said first substrate having a reduced thickness into plural chips is carried out by completely cutting through said first substrate.
Claim 21
Dependent Claim
20 words
A method for fabricating a semiconductor device according to claim 17, wherein said first tape is supported by a frame.
Claim 22
Independent Claim
160 words
A method for fabricating a semiconductor device, comprising the steps of: providing a first substrate, a thickness of the first substrate having been reduced to 0.1 μm-110 μm by removing material of the first substrate from a rear surface thereof, said first substrate having a plurality of semiconductor elements on a surface thereof, a surface of said first substrate being covered by a first film; covering said rear surface of said first substrate having a reduced thickness with a second film; removing said first film from said first substrate having said second film; dividing said first substrate into plural semiconductor chips by cutting said first substrate; facing a second substrate to the surface of said first substrate on which said semiconductor elements are formed; and pushing a semiconductor chip, of the plural semiconductor chips, by a heating head in the direction from said second film to said second substrate such that said semiconductor chip is detached from said second film.
Claim 23
Independent Claim
160 words
A method for fabricating a semiconductor device, comprising the steps of: providing a first substrate, a thickness of the first substrate having been reduced to 0.1 μm-110 μm by removing material of the first substrate from a rear surface thereof, said first substrate having a plurality of semiconductor elements on a surface thereof, a surface of said first substrate being covered by a first film; covering said rear surface of said first substrate having a reduced thickness with a second film; removing said first film from said first substrate having said second film; dividing said first substrate into plural semiconductor chips by cutting said first substrate; facing a second substrate to the surface of said first substrate on which said semiconductor elements are formed; and pushing a semiconductor chip, of the plural semiconductor chips, by a heating head in the direction from said second film to said second substrate such that said semiconductor chip is detached from said second film.
Claim 24
Dependent Claim
33 words
A method for fabricating a semiconductor device according to claim 20, wherein said step of dividing said first substrate into plural semiconductor chips is carried out by completely cutting through said first substrate.
Claim 25
Dependent Claim
26 words
A method for fabricating a semiconductor device according to claim 20, wherein said chip is fixed to said second substrate by using an anisotropic electroconductive adhesive.
Claim 26
Dependent Claim
50 words
A method for fabricating a semiconductor device according to claim 20, wherein the first substrate has a first surface opposite the rear surface, and wherein the plurality of semiconductor elements are on the first surface of the first substrate, said first surface being the surface covered by said first film.
Claim 27
Independent Claim
160 words
A method for fabricating a semiconductor device, comprising the steps of: providing a first substrate, having a thickness which has been reduced to 0.1 μm to 110 μm by removing material of the first substrate from a rear surface thereof, said first substrate having a plurality of semiconductor elements on a surface thereof, a surface of the first substrate being covered by a first tape; covering said rear surface of said first substrate having a reduced thickness with a second tape; removing said first tape from said first substrate having said second tape; dividing said first substrate into plural semiconductor chips having a reduced thickness by cutting said first substrate; disposing a second substrate so as to face to said first substrate; and pushing out a semiconductor chip, of the plural semiconductor chips, from a back side of said second tape, to said second substrate, by a heating head so as to fix said semiconductor chip to said second substrate.
Claim 28
Independent Claim
160 words
A method for fabricating a semiconductor device, comprising the steps of: providing a first substrate, having a thickness which has been reduced to 0.1 μm to 110 μm by removing material of the first substrate from a rear surface thereof, said first substrate having a plurality of semiconductor elements on a surface thereof, a surface of the first substrate being covered by a first tape; covering said rear surface of said first substrate having a reduced thickness with a second tape; removing said first tape from said first substrate having said second tape; dividing said first substrate into plural semiconductor chips having a reduced thickness by cutting said first substrate; disposing a second substrate so as to face to said first substrate; and pushing out a semiconductor chip, of the plural semiconductor chips, from a back side of said second tape, to said second substrate, by a heating head so as to fix said semiconductor chip to said second substrate.
Claim 29
Dependent Claim
27 words
A method for fabricating a semiconductor device according to claim 24, wherein said semiconductor chip is fixed to said second substrate by using an anisotropic electroconductive adhesive.
Claim 30
Dependent Claim
50 words
A method for fabricating a semiconductor device according to claim 24, wherein the first substrate has a first surface opposite the rear surface, and wherein the plurality of semiconductor elements are on the first surface of the first substrate, said first surface being the surface covered by said first tape.
Claim 31
Independent Claim
123 words
A method for fabricating a semiconductor device, comprising the steps of: providing a semiconductor wafer, whose thickness has been reduced to 0.1 μm to 110 μm by removing material of the semiconductor wafer from a rear surface thereof, said semiconductor wafer having a plurality of semiconductor elements on a surface thereof, a surface of said semiconductor wafer being covered by a first film; covering said rear surface of said semiconductor wafer having a reduced thickness with a second film; removing said first film from said semiconductor wafer having said second film; dividing the semiconductor wafer having a reduced thickness into plural semiconductor chips by completely cutting through said semiconductor wafer; and fixing a semiconductor chip, of the plural semiconductor chips, to a substrate.
Claim 32
Independent Claim
123 words
A method for fabricating a semiconductor device, comprising the steps of: providing a semiconductor wafer, whose thickness has been reduced to 0.1 μm to 110 μm by removing material of the semiconductor wafer from a rear surface thereof, said semiconductor wafer having a plurality of semiconductor elements on a surface thereof, a surface of said semiconductor wafer being covered by a first film; covering said rear surface of said semiconductor wafer having a reduced thickness with a second film; removing said first film from said semiconductor wafer having said second film; dividing the semiconductor wafer having a reduced thickness into plural semiconductor chips by completely cutting through said semiconductor wafer; and fixing a semiconductor chip, of the plural semiconductor chips, to a substrate.
Claim 33
Dependent Claim
50 words
A method for fabricating a semiconductor device according to claim 27, wherein the semiconductor wafer has a first surface opposite the rear surface, and wherein the plurality of semiconductor elements are on said first surface of the semiconductor wafer, said first surface being the surface covered by the first film.
Claim 34
Independent Claim
152 words
A method for fabricating a semiconductor device, comprising the steps of: providing a semiconductor substrate having a thickness which has been reduced to 0.1 μm to 110 μm by removing material of the semiconductor substrate from a rear surface thereof, said semiconductor substrate having a plurality of semiconductor elements on a surface thereof, a surface of said semiconductor substrate being covered by a first film; covering said rear surface of said semiconductor substrate having a reduced thickness with a second film; removing said first film from said semiconductor substrate having said second film; dividing said semiconductor substrate having a reduced thickness into plural semiconductor chips by completely cutting through the semiconductor substrate having the reduced thickness; and detaching a semiconductor chip, of the plural semiconductor chips, from said second film by pushing out said semiconductor chip from a back side of said second film by using a head having a flat surface.
Claim 35
Independent Claim
152 words
A method for fabricating a semiconductor device, comprising the steps of: providing a semiconductor substrate having a thickness which has been reduced to 0.1 μm to 110 μm by removing material of the semiconductor substrate from a rear surface thereof, said semiconductor substrate having a plurality of semiconductor elements on a surface thereof, a surface of said semiconductor substrate being covered by a first film; covering said rear surface of said semiconductor substrate having a reduced thickness with a second film; removing said first film from said semiconductor substrate having said second film; dividing said semiconductor substrate having a reduced thickness into plural semiconductor chips by completely cutting through the semiconductor substrate having the reduced thickness; and detaching a semiconductor chip, of the plural semiconductor chips, from said second film by pushing out said semiconductor chip from a back side of said second film by using a head having a flat surface.
Claim 36
Dependent Claim
50 words
A method for fabricating a semiconductor device according to claim 29, wherein the semiconductor substrate has a first surface opposite the rear surface, and wherein the plurality of semiconductor elements are on said first surface of the semiconductor substrate, said first surface being the surface covered by said first film.
Claim 37
Independent Claim
150 words
A method for fabricating a semiconductor device, comprising the steps of: providing a first substrate whose thickness has been reduced to 0.1 μm to 110 μm by removing material of the first substrate from a second main surface thereof, said first substrate having a plurality of semiconductor elements on a first surface thereof opposite to the second main surface, said first surface being covered by a first film; covering said second main surface of said first substrate having a reduced thickness with a second film; removing said first film formed from said first substrate having said second film; cutting completely said first substrate having a reduced thickness so as to divide said first substrate into plural chips; and detaching a chip of said plural chips from said second film by pushing out said chip from a back side of said second film by using a head having a flat surface.
Claim 38
Independent Claim
150 words
A method for fabricating a semiconductor device, comprising the steps of: providing a first substrate whose thickness has been reduced to 0.1 μm to 110 μm by removing material of the first substrate from a second main surface thereof, said first substrate having a plurality of semiconductor elements on a first surface thereof opposite to the second main surface, said first surface being covered by a first film; covering said second main surface of said first substrate having a reduced thickness with a second film; removing said first film formed from said first substrate having said second film; cutting completely said first substrate having a reduced thickness so as to divide said first substrate into plural chips; and detaching a chip of said plural chips from said second film by pushing out said chip from a back side of said second film by using a head having a flat surface.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-12-19 | 2004-06-19 | 2004-12-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-12-19 | 2008-06-19 | 2008-12-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-12-19 | 2012-06-19 | 2012-12-19 | $7700.00 | Window Closed / Lapsed |