US5656552A
Expired / Lapsed
US
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Method of making a thin conformal high-yielding multi-chip module
Assignee: National Security Agency
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Filing: 1996-06-24
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Granted: 1997-08-12
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Expires: 2016-06-24
Abstract
Abstract A method of making a multi-chip module by thinning individual integrated circuit die or an integrated circuit wafer containing multiple integrated circuits; bonding thinned dice or a thinned wafer to a mylar, polyimide, semiconductor, or ceramic substrate; depositing at least one interconnect material over the wafer, where the first interconnect layer is deposited directly over the wafer; depositing a dielectric layer over each of the interconnect layers; opening vias in the dielectric layers in order to interconnect the dice and multi-chip module as required; and removing the substrate to form a thin, conformal, and high-yielding multi-chip module.
Inventors
- 👤 John James Hudak
- 👤 David Jerome Mountain
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 08:30
CPC Classifications
H; H10; H10W; H10W90/00; H10P; H10P72/00; H10P72/70; H10P72/74; H10W70/00; H10W70/099; H10P72/7424; H10P72/743; H10W70/60; H10W90/10; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 50
Claim 1
Independent Claim
126 words
A method of making a multi-chip module, comprising the steps of: a) thinning at least one integrated circuit to a thickness of less than or equal to 50 um, where the at least one integrated circuit has a circuit side and a backside; b) testing the thinned at least one integrated circuit; c) bonding the tested at least one thinned integrated circuit to a bonding substrate; d) putting a layer of interconnect material directly over the at least one thinned integrated circuit and the bonding substrate; e) putting a dielectric layer over said interconnect layer; f) opening vias in said dielectric layer; g) repeating steps (d), (e), and (f) for each additional interconnect layer required; and h) removing the bonding substrate to form a multi-chip module.
Claim 2
Independent Claim
126 words
A method of making a multi-chip module, comprising the steps of: a) thinning at least one integrated circuit to a thickness of less than or equal to 50 um, where the at least one integrated circuit has a circuit side and a backside; b) testing the thinned at least one integrated circuit; c) bonding the tested at least one thinned integrated circuit to a bonding substrate; d) putting a layer of interconnect material directly over the at least one thinned integrated circuit and the bonding substrate; e) putting a dielectric layer over said interconnect layer; f) opening vias in said dielectric layer; g) repeating steps (d), (e), and (f) for each additional interconnect layer required; and h) removing the bonding substrate to form a multi-chip module.
Claim 3
Dependent Claim
137 words
The method of claim 1, wherein said step of thinning at least one integrated circuit comprises the steps of: a) coating the circuit side of the at least one integrated circuit with polyimide; b) curing the coated at least one integrated circuit a first time at a temperature of 80° C. for one minute; c) curing the coated at least one integrated circuit a second time at 350° C. for one hour in a vacuum; d) bonding a handle-wafer to the polyimide layer coated to the circuit side of the at least one integrated circuit;. e) thinning the at least one integrated circuit from the backside of the at least one integrated circuit to a thickness of less than or equal to 50 um; and f) removing the thinned at least one integrated circuit from the handle-wafer.
Claim 4
Dependent Claim
132 words
The method of claim 1, wherein said step of thinning at least one integrated circuit comprises the steps of: a) bonding the at least one integrated circuit side down to a first supporting substrate in a registered fashion so that the at least one integrated circuit may be positionally identified; b) surrounding the at least one integrated circuit with a suitable material; c) thinning the at least one integrated circuit from the backside to a thickness of less than or equal to 50 um; d) making electrical contact to the backside of the at least one integrated circuit as required; e) bonding a second supporting substrate to the backside of the thinned at least one integrated circuit in order to create a three layer stack; and f) removing the first supporting substrate.
Claim 5
Dependent Claim
43 words
The method of claim 3, wherein said step of surrounding the at least one integrated circuit is comprised of surrounding the at least one integrated circuit with a material selected from the group consisting of hard wax, epoxy, bisbenzocyclobutene resin, polyimide, and acrylic.
Claim 6
Dependent Claim
52 words
The method of claim 4, wherein said step of thinning the at least one integrated circuit is comprised of thinning the at least one integrated circuit by a thinning technique selected from the group consisting of mechanical grinding, lapping, polishing, wet chemical etching, dry chemical etching, sputter removal, and a combination thereof.
Claim 7
Dependent Claim
48 words
The method of claim 5, wherein said step of removing the first supporting substrate is comprised of removing the first supporting substrate by a removal technique selected from the group consisting of mechanical grinding, lapping, polishing, wet chemical etching, dry chemical etching, sputter removal, and a combination thereof.
Claim 8
Dependent Claim
83 words
The method of claim 2, wherein said step of thinning the at least one integrated circuit from the backside of the at least one integrated circuit to a thickness of less than or equal to 50 um is comprised of thinning the at least one integrated circuit from the backside of the at least one integrated circuit to a thickness of less than or equal to 50 um where said at least one integrated circuit is backside processed to form a backside electrode.
Claim 9
Dependent Claim
75 words
The method of claim 1, wherein said step of thinning at least one integrated circuit is comprised of thinning at least one integrated circuit where the at least one integrated circuit is selected from the group consisting of an unbeveled integrated circuit die, a beveled integrated circuit die, an unbeveled integrated circuit wafer, a beveled integrated circuit wafer, a segment of an unbeveled integrated circuit wafer, and a segment of a beveled integrated circuit wafer.
Claim 10
Dependent Claim
45 words
The method of claim 1, further comprising the step of beveling any unbeveled at least one integrated circuit after the at least one integrated circuit is bonded to the bonding substrate and before the interconnect layer is put on the at least one integrated circuit.
Claim 11
Dependent Claim
54 words
The method of claim 1, wherein said step of bonding the tested at least one thinned integrated circuit to a bonding substrate is comprised of bonding the tested at least one thinned integrated circuit to a bonding substrate wherein said bonding substrate is selected from the group consisting of polyimide, mylar, ceramic, and semiconductor.
Claim 12
Dependent Claim
78 words
The method of claim 1, wherein said step of bonding the tested at least one thinned integrated circuit to a bonding substrate is comprised of bonding the tested at least one thinned integrated circuit to a bonding substrate selected from the group consisting of a bonding substrate coated with a conducting material to provide electrical contact to a backside electrode of the tested at least one thinned integrated circuit and a bonding substrate coated with a dielectric material.
Claim 13
Dependent Claim
69 words
The method of claim 1, wherein said step of putting a layer of interconnect material directly over the at least one thinned integrated circuit and bonding substrate is comprised of putting a layer of interconnect material directly over the at least one thinned integrated circuit using a technique selected from the group consisting of depositing an interconnect layer, laser forming an interconnect layer, and laminating a pre-formed interconnect layer.
Claim 14
Dependent Claim
53 words
The method of claim 1, wherein said step of putting a layer of dielectric material over the interconnect layer is comprised of putting a layer of dielectric material over the interconnect layer using a technique selected from the group consisting of depositing dielectric material, laser forming dielectric material, and laminating pre-formed dielectric material.
Claim 15
Dependent Claim
33 words
The method of claim 1, wherein said step of bonding the tested at least one integrated circuit to a bonding substrate comprises bonding at least two tested integrated circuits to a bonding substrate.
Claim 16
Dependent Claim
60 words
The method of claim 14, wherein said step of bonding at least two tested integrated circuits to a bonding substrate comprises bonding the at least two tested integrated circuits to a bonding substrate using a technique selected from the group consisting of butting the at least two tested integrated circuits together and overlapping the at least two tested integrated circuits.
Claim 17
Dependent Claim
54 words
The method of claim 1, wherein said step of removing the bonding substrate to form a multi-chip module is comprised of removing the bonding substrate using a removal technique selected from the group consisting of reactive ion etching, dry chemical etching, wet chemical etching, mechanical grinding, using a release layer, and any combination thereof.
Claim 18
Dependent Claim
59 words
The method of claim 7, wherein said step of removing the thinned at least one die from the handle-wafer is comprised of removing the thinned at least one integrated circuit using a removal technique selected from the group consisting of reactive ion etching, dry chemical etching, wet chemical etching, mechanical grinding, using a release layer, and any combination thereof.
Claim 19
Dependent Claim
75 words
The method of claim 17, wherein said step of thinning at least one integrated circuit is comprised of thinning at least one integrated circuit where the at least one integrated circuit is selected from the group consisting of an unbeveled integrated circuit die, a beveled integrated circuit die, an unbeveled integrated circuit wafer, a beveled integrated circuit wafer, a segment of an unbeveled integrated circuit wafer, and a segment of a beveled integrated circuit wafer.
Claim 20
Dependent Claim
45 words
The method of claim 18, further comprising the step of beveling any unbeveled at least one integrated circuit after the at least one integrated circuit is bonded to the bonding substrate and before the interconnect layer is put on the at least one integrated circuit.
Claim 21
Dependent Claim
54 words
The method of claim 19, wherein said step of bonding the tested at least one thinned integrated circuit to a bonding substrate is comprised of bonding the tested at least one thinned integrated circuit to a bonding substrate wherein said bonding substrate is selected from the group consisting of polyimide, mylar, ceramic, and semiconductor.
Claim 22
Dependent Claim
78 words
The method of claim 20, wherein said step of bonding the tested at least one thinned integrated circuit to a bonding substrate is comprised of bonding the tested at least one thinned integrated circuit to a bonding substrate selected from the group consisting of a bonding substrate coated with a conducting material to provide electrical contact to a backside electrode of the tested at least one thinned integrated circuit and a bonding substrate coated with a dielectric material.
Claim 23
Dependent Claim
69 words
The method of claim 21, wherein said step of putting a layer of interconnect material directly over the at least one thinned integrated circuit and bonding substrate is comprised of putting a layer of interconnect material directly over the at least one thinned integrated circuit using a technique selected from the group consisting of depositing an interconnect layer, laser forming an interconnect layer, and laminating a pre-formed interconnect layer.
Claim 24
Dependent Claim
53 words
The method of claim 22, wherein said step of putting a layer of dielectric material over the interconnect layer is comprised of putting a layer of dielectric material over the interconnect layer using a technique selected from the group consisting of depositing dielectric material, laser forming dielectric material, and laminating pre-formed dielectric material.
Claim 25
Dependent Claim
54 words
The method of claim 23, wherein said step of removing the bonding substrate to form a multi-chip module is comprised of removing the bonding substrate using a removal technique selected from the group consisting of reactive ion etching, dry chemical etching, wet chemical etching, mechanical grinding, using a release layer, and any combination thereof.
Claim 26
Independent Claim
179 words
A method of making a multi-chip module, comprising the steps of: a) thinning at least one integrated circuit to a thickness of less than or equal to 50 um, where the at least one integrated circuit has a circuit side and a backside; b) testing the thinned at least one integrated circuit; c) bonding the tested at least one thinned integrated circuit to a bonding substrate; d) putting a dielectric layer over said at least one thinned integrated circuit; e) etching the dielectric layer to the surface of the at least one integrated circuit so that dielectric material remains along the edge of the at least one integrated circuit for rounding the edges of the at least one integrated circuit; f) putting a layer of interconnect material over the at least one integrated circuit and dielectric layer at the edge of the at least one integrated circuit; g) putting a dielectric layer over the interconnect layer; h) repeating steps (f) and (g) for each additional interconnect layer required; and i) removing the bonding substrate to form a multi-chip module.
Claim 27
Independent Claim
179 words
A method of making a multi-chip module, comprising the steps of: a) thinning at least one integrated circuit to a thickness of less than or equal to 50 um, where the at least one integrated circuit has a circuit side and a backside; b) testing the thinned at least one integrated circuit; c) bonding the tested at least one thinned integrated circuit to a bonding substrate; d) putting a dielectric layer over said at least one thinned integrated circuit; e) etching the dielectric layer to the surface of the at least one integrated circuit so that dielectric material remains along the edge of the at least one integrated circuit for rounding the edges of the at least one integrated circuit; f) putting a layer of interconnect material over the at least one integrated circuit and dielectric layer at the edge of the at least one integrated circuit; g) putting a dielectric layer over the interconnect layer; h) repeating steps (f) and (g) for each additional interconnect layer required; and i) removing the bonding substrate to form a multi-chip module.
Claim 28
Dependent Claim
137 words
The method of claim 25, wherein said step of thinning at least one integrated circuit comprises the steps of: a) coating the circuit side of the at least one integrated circuit with polyimide; b) curing the coated at least one integrated circuit a first time at a temperature of 80° C. for one minute; c) curing the coated at least one integrated circuit a second time at 350° C. for one hour in a vacuum; d) bonding a handle-wafer to the polyimide layer coated to the circuit side of the at least one integrated circuit; e) thinning the at least one integrated circuit from the backside of the at least one integrated circuit to a thickness of less than or equal to 50 um; and f) removing the thinned at least one integrated circuit from the handle-wafer.
Claim 29
Dependent Claim
133 words
The method of claim 25, wherein said step of thinning at least one integrated circuit comprises the steps of: a) bonding the at least one integrated circuit circuit side down to a first supporting substrate in a registered fashion so that the at least one integrated circuit may be positionally identified; b) surrounding the at least one integrated circuit with a suitable material; c) thinning the at least one integrated circuit from the backside to a thickness of less than or equal to 50 um; d) making electrical contact to the backside of the at least one integrated circuit as required; e) bonding a second supporting substrate to the backside of the thinned at least one integrated circuit in order to create a three layer stack; and f) removing the first supporting substrate.
Claim 30
Dependent Claim
43 words
The method of claim 27, wherein said step of surrounding the at least one integrated circuit is comprised of surrounding the at least one integrated circuit with a material selected from the group consisting of hard wax, epoxy, bisbenzocyclobutene resin, polyimide, and acrylic.
Claim 31
Dependent Claim
52 words
The method of claim 28, wherein said step of thinning the at least one integrated circuit is comprised of thinning the at least one integrated circuit by a thinning technique selected from the group consisting of mechanical grinding, lapping, polishing, wet chemical etching, dry chemical etching, sputter removal, and a combination thereof.
Claim 32
Dependent Claim
48 words
The method of claim 29, wherein said step of removing the first supporting substrate is comprised of removing the first supporting substrate by a removal technique selected from the group consisting of mechanical grinding, lapping, polishing, wet chemical etching, dry chemical etching, sputter removal, and a combination thereof.
Claim 33
Dependent Claim
83 words
The method of claim 26, wherein said step of thinning the at least one integrated circuit from the backside of the at least one integrated circuit to a thickness of less than or equal to 50 um is comprised of thinning the at least one integrated circuit from the backside of the at least one integrated circuit to a thickness of less than or equal to 50 um where said at least one integrated circuit is backside processed to form a backside electrode.
Claim 34
Dependent Claim
75 words
The method of claim 25, wherein said step of thinning at least one integrated circuit is comprised of thinning at least one integrated circuit where the at least one integrated circuit is selected from the group consisting of an unbeveled integrated circuit die, a beveled integrated circuit die, an unbeveled integrated circuit wafer, a beveled integrated circuit wafer, a segment of an unbeveled integrated circuit wafer, and a segment of a beveled integrated circuit wafer.
Claim 35
Dependent Claim
45 words
The method of claim 25, further comprising the step of beveling any unbeveled at least one integrated circuit after the at least one integrated circuit is bonded to the bonding substrate and before the interconnect layer is put on the at least one integrated circuit.
Claim 36
Dependent Claim
57 words
The method of claim 25, wherein said step of bonding the tested at least one thinned integrated circuit to a bonding substrate is comprised of bonding the tested at least one thinned integrated circuit of step (b) to a bonding substrate wherein said bonding substrate is selected from the group consisting of polyimide, mylar, ceramic, and semiconductor.
Claim 37
Dependent Claim
78 words
The method of claim 25, wherein said step of bonding the tested at least one thinned integrated circuit to a bonding substrate is comprised of bonding the tested at least one thinned integrated circuit to a bonding substrate selected from the group consisting of a bonding substrate coated with a conducting material to provide electrical contact to a backside electrode of the tested at least one thinned integrated circuit and a bonding substrate coated with a dielectric material.
Claim 38
Dependent Claim
88 words
The method of claim 25, wherein said step of putting a layer of interconnect material over the at least one integrated circuit and dielectric material at the edge of the at least one integrated circuit is comprised of putting a layer of interconnect material over the at least one integrated circuit and dielectric material at the edge of the at least one integrated circuit using a technique selected from the group consisting of depositing an interconnect layer, laser forming an interconnect layer, and laminating a pre-formed interconnect layer.
Claim 39
Dependent Claim
53 words
The method of claim 25, wherein said step of putting a layer of dielectric material over the interconnect layer is comprised of putting a layer of dielectric material over the interconnect layer using a technique selected from the group consisting of depositing dielectric material, laser forming dielectric material, and laminating pre-formed dielectric material.
Claim 40
Dependent Claim
33 words
The method of claim 25, wherein said step of bonding the tested at least one integrated circuit to a bonding substrate comprises bonding at least two tested integrated circuits to a bonding substrate.
Claim 41
Dependent Claim
60 words
The method of claim 38, wherein said step of bonding at least two tested integrated circuits to a bonding substrate comprises bonding the at least two tested integrated circuits to a bonding substrate using a technique selected from the group consisting of butting the at least two tested integrated circuits together and overlapping the at least two tested integrated circuits.
Claim 42
Dependent Claim
54 words
The method of claim 25, wherein said step of removing the bonding substrate to form a multi-chip module is comprised of removing the bonding substrate using a removal technique selected from the group consisting of reactive ion etching, dry chemical etching, wet chemical etching, mechanical grinding, using a release layer, and any combination thereof.
Claim 43
Dependent Claim
60 words
The method of claim 31, wherein said step of removing the thinned at least one integrated circuit from the handle-wafer is comprised of removing the thinned at least one integrated circuit using a removal technique selected from the group consisting of reactive ion etching, dry chemical etching, wet chemical etching, mechanical grinding, using a release layer, and any combination thereof.
Claim 44
Dependent Claim
75 words
The method of claim 41, wherein said step of thinning at least one integrated circuit is comprised of thinning at least one integrated circuit where the at least one integrated circuit is selected from the group consisting of an unbeveled integrated circuit die, a beveled integrated circuit die, an unbeveled integrated circuit wafer, a beveled integrated circuit wafer, a segment of an unbeveled integrated circuit wafer, and a segment of a beveled integrated circuit wafer.
Claim 45
Dependent Claim
45 words
The method of claim 42, further comprising the step of beveling any unbeveled at least one integrated circuit after the at least one integrated circuit is bonded to the bonding substrate and before the interconnect layer is put on the at least one integrated circuit.
Claim 46
Dependent Claim
57 words
The method of claim 42, wherein said step of bonding the tested at least one thinned integrated circuit to a bonding substrate is comprised of bonding the tested at least one thinned integrated circuit of step (b) to a bonding substrate wherein said bonding substrate is selected from the group consisting of polyimide, mylar, ceramic, and semiconductor.
Claim 47
Dependent Claim
78 words
The method of claim 44, wherein said step of bonding the tested at least one thinned integrated circuit to a bonding substrate is comprised of bonding the tested at least one thinned integrated circuit to a bonding substrate selected from the group consisting of a bonding substrate coated with a conducting material to provide electrical contact to a backside electrode of the tested at least one thinned integrated circuit and a bonding substrate coated with a dielectric material.
Claim 48
Dependent Claim
88 words
The method of claim 45, wherein said step of putting a layer of interconnect material over the at least one integrated circuit and dielectric material at the edge of the at least one integrated circuit is comprised of putting a layer of interconnect material over the at least one integrated circuit and dielectric material at the edge of the at least one integrated circuit using a technique selected from the group consisting of depositing an interconnect layer, laser forming an interconnect layer, and laminating a pre-formed interconnect layer.
Claim 49
Dependent Claim
53 words
The method of claim 46, wherein said step of putting a layer of dielectric material over the interconnect layer is comprised of putting a layer of dielectric material over the interconnect layer using a technique selected from the group consisting of depositing dielectric material, laser forming dielectric material, and laminating pre-formed dielectric material.
Claim 50
Dependent Claim
54 words
The method of claim 46, wherein said step of removing the bonding substrate to form a multi-chip module is comprised of removing the bonding substrate using a removal technique selected from the group consisting of reactive ion etching, dry chemical etching, wet chemical etching, mechanical grinding, using a release layer, and any combination thereof.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-08-11 | 2001-02-10 | 2001-08-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-11 | 2005-02-10 | 2005-08-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-08-11 | 2009-02-10 | 2009-08-12 | $7700.00 | Window Closed / Lapsed |